MT29F4G01ABBFD12-AUT:F vs MT25QU01GBBB8E12-0AUT 对比

详细并排对比 MT29F4G01ABBFD12-AUT:F 出自 Micron Technology 和 MT25QU01GBBB8E12-0AUT 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT29F4G01ABBFD12-AUT:F MT29F4G01ABBFD12-AUT:F - 4Gbit SLC SPI NAND Flash | Micron

MT29F4G01ABBFD12-AUT:F - 4Gbit SLC SPI NAND Flash | Micron

MT29F4G01ABBFD12-AUT:F ✓ 量产中
Micron Technology
MT25QU01GBBB8E12-0AUT MT25QU01GBBB8E12-0AUT - 1Gb SPI NOR Flash 133MHz | Micron

MT25QU01GBBB8E12-0AUT - 1Gb SPI NOR Flash 133MHz | Micron

MT25QU01GBBB8E12-0AUT ✓ 量产中

规格对比

参数 MT29F4G01ABBFD12-AUT:F MT25QU01GBBB8E12-0AUT
品牌 Micron Technology Micron Technology
分类 EEPROM Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.58 $7.10
存储器类型 FLASH - NAND (SLC) Memory IC NOR Flash, Serial (SPI)
接口 SPI SPI, Dual SPI, Quad SPI
存储容量 4 Gbit (512 MB) —
Cell Type SLC (Single-Level Cell) —
封装 TBGA (63-ball, per Micron serial NAND family) 24-T-PBGA (6x8 mm)
安装类型 Surface Mount Surface Mount
Automotive Qualification AUT grade, :F automotive suffix AEC-Q100 qualified
电源电压 [DATA_NEEDED: VCC range] 1.8 V
Max Clock Frequency [DATA_NEEDED: SPI clock frequency] 133 MHz
Page Size [DATA_NEEDED: page size] —
Block Size [DATA_NEEDED: block size] —
On-Die ECC Yes (ECD feature of serial NAND family) —
Endurance [DATA_NEEDED: program/erase cycles] —
工作温度 [DATA_NEEDED: temperature range] -40C to +125C
RoHS 状态 Compliant (lead-free :F suffix) [DATA_NEEDED: RoHS status]
MSL 等级 [DATA_NEEDED: moisture sensitivity level] [DATA_NEEDED: MSL level]
Density — 1 Gbit (128 MB)
存储组织 — x1 / x2 / x4 (I/O width)
Access Time — 6 ns
FBGA Code — RW320
Write Protection — Hardware write protection; Software write protection; Write enable latch
Product Longevity Program — No
Program/Erase Endurance — [DATA_NEEDED: endurance cycles]
Data Retention — [DATA_NEEDED: retention years]

数据手册与资源

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