MT40A1G16TD-062E vs H5ANAG6NCJR-XN 对比

详细并排对比 MT40A1G16TD-062E 出自 Micron Technology 和 H5ANAG6NCJR-XN 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT40A1G16TD-062E MT40A1G16TD-062E - 16Gb DDR4-3200 x16 SDRAM FBGA | Micron

MT40A1G16TD-062E - 16Gb DDR4-3200 x16 SDRAM FBGA | Micron

MT40A1G16TD-062E ✓ 量产中
SK hynix
H5ANAG6NCJR-XN H5ANAG6NCJR-XN - 16Gb DDR4-3200 SDRAM FBGA-96 | SK hynix

H5ANAG6NCJR-XN - 16Gb DDR4-3200 SDRAM FBGA-96 | SK hynix

H5ANAG6NCJR-XN ✓ 量产中

规格对比

参数 MT40A1G16TD-062E H5ANAG6NCJR-XN
品牌 Micron Technology SK hynix
分类 DRAM Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $18.41 $71.20
存储器类型 DDR4 SDRAM DDR4 SDRAM
存储容量 16 Gbit —
存储组织 1G x 16 1G x 16
Clock Frequency 1.6 GHz —
Access Time 19 ns —
接口 POD12 (1.2V pseudo open-drain) —
VDD Supply Voltage 1.2 V +/- 60 mV —
VDDQ Supply Voltage 1.2 V +/- 60 mV —
VPP Supply Voltage 2.5 V, -125 mV, +250 mV —
Bank Architecture 8 banks (x16 configuration) —
VREFDQ On-die, internal, adjustable generation —
Refresh 8192-cycle, 64 ms up to 85C; 32 ms from 85C to 95C —
工作温度 TC maximum up to 95 C [DATA_NEEDED: operating temperature range]
封装 96-ball FBGA (7.5 x 13 mm) FBGA-96 (96-ball)
安装类型 Surface Mount Surface Mount (BGA)
Speed Grade -062E —
Product Line Suffix AAT:F (automotive AEC grade available per Micron catalog) —
Density — 16 Gbit (1G x 16)
数据速率 — 3200 Mbps/pin (DDR4-3200)
Supply Voltage (VDD) — 1.14 V to 1.26 V
Package Width — 8 mm
Auto Self-Refresh — Yes
Auto Precharge — Yes
Asynchronous Reset — Yes
Data Mask (DM) — Yes
Dynamic On-Chip Termination (ODT) — Yes
ZQ Calibration — Yes
CRC (Command/Address) — Yes
Write Leveling — Yes
Maximum Standby Current — 0.074 A (per Vyrian listing)
RoHS 状态 — Compliant
CAS 延迟 — [DATA_NEEDED: CAS latency for -XN speed grade]

数据手册与资源

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