MT40A1G8SA-062E vs K4A8G085WB-BCTD 对比
详细并排对比 MT40A1G8SA-062E 出自 Micron Technology 和 K4A8G085WB-BCTD 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MT40A1G8SA-062E | K4A8G085WB-BCTD |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.05 | $7.50 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | — |
| 存储组织 | 1G x 8 | — |
| 数据速率 | 3200 MT/s (DDR4-3200) | 3200 Mbps (PC4-25600) |
| Clock Frequency | 1.6 GHz | — |
| Access Time (CAS Latency) | CL22 at 3200 MT/s | — |
| Row Access Time | 19 ns | — |
| VDD / VDDQ | 1.2 V +/-60 mV | — |
| VPP | 2.5 V, -125 mV, +250 mV | — |
| Internal Banks | 16 banks (4 bank groups x 4 banks) | — |
| Refresh | 8192-cycle; 64 ms (0-85C), 32 ms (85-95C), 16 ms (>95C) | — |
| 工作温度 | 0C to +95C (CT range; IT: -40C to +95C) | 0°C to +95°C (TC) |
| I/O Type | 1.2 V pseudo open-drain | — |
| Burst Length | BL8, BC4 (burst chop) | 8 (BL8) |
| 封装 | 78-ball FBGA (7.5 x 11 mm) | FBGA-78 (TFBGA) |
| 安装类型 | Surface Mount | — |
| 特性 | Auto self-refresh, write leveling, dynamic ODT, CRC, auto precharge, ZQ calibration, on-die adjustable VREFDQ | — |
| 存储容量 | — | 8 Gb (1G x 8) |
| 电源电压 | — | 1.2 V |
| Speed Bin | — | CL22-22-22 |
| On-Die Termination | — | Yes (ODT) |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| Data Mask Function | — | Yes |
| JESD-30 Code | — | R-PBGA-B78 |
| Number of Terminals | — | 78 |
| RoHS 状态 | — | Compliant |