MT40A1G8SA-062E - 8Gb DDR4 SDRAM 3200MT/s | Micron
料号： MT40A1G8SA-062E ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $7.95 | $7.95 |
| 10 | $7.28 | $72.80 |
| 100 | $6.87 | $687.00 |
| 500 | $6.45 | $3,225.00 |
| 1,000 | $6.05 | $6,050.00 |
MT40A1G8SA-062E 概述
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock, doubling the data rate per clock cycle. Within the memory hierarchy, it sits as main system memory below CPU caches and above storage. DDR4 operates at 1.2V core voltage versus DDR3's 1.5V, cutting memory subsystem power by roughly 20%, and introduced bank groups, on-die termination refinements, and higher pre-fetch-efficient signaling for mainstream servers, workstations, and embedded controllers.
Key features include on-die, internal, adjustable VREFDQ generation, which removes the need to route an external reference voltage and improves noise margins; 1.2V pseudo open-drain I/O for cleaner eye diagrams at 3200 MT/s; and 16 internal banks arranged as 4 bank groups of 4 banks, enabling faster random row access through bank-group interleaving.
The device supports temperature-dependent refresh with 8192-cycle refresh: 64ms at -40C to +85C, 32ms above +85C to +95C, and 16ms above +95C, preserving data integrity across the industrial temperature range. Additional features include auto self-refresh, write leveling, dynamic on-chip termination (ODT), CRC function, auto precharge, and ZQ calibration. The CAS latency is CL22 at DDR4-3200 with burst lengths of 8 and 4 (burst chop), and the row access time is approximately 19 ns.
Typical applications include server and data center DIMM modules, networking equipment line-card memory, industrial embedded controllers, and high-performance computing systems that require high bandwidth and large capacity per device. The x8 organization suits both ECC-based module designs and discrete solder-down memory footprints.
When designing with this device, provide a stable 1.2V VDD/VDDQ rail and a 2.5V VPP rail for wordline boost, decouple all supply balls closely, and follow DDR4 fly-by routing and length-matching guidelines to maintain signal integrity at 3200 MT/s.
This page adds value beyond the datasheet by synthesizing distributor pricing, same-footprint drop-in alternatives across Micron, Samsung, and SK Hynix, and practical design notes for DDR4 layout and power sequencing.
直接替换替代料： MT40A1G8SA-062E ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： MT40A1G8SA-062E （相同外形与封装尺寸） ——差异在于 Package, Data Rate, Burst Length, Operating Temperature, Clock Frequency.
快速对比工具——选择替代料号进行并排对比：
MT40A1G8SA-062E:E
✅ 直接替换📋 参考替代料（不在目录中）
MT40A1G8SA-062E:R
✅ 直接替换📋 参考替代料（不在目录中）
MT40A1G8SA-075:E
✅ 直接替换✓ 有现货
$6.3 / 个
查看数据手册 →MT40A1G8SA-062E IT:R
✅ 直接替换📋 参考替代料（不在目录中）
K4A8G085WC-BCTD
✅ 直接替换✓ 有现货
$50.85 / 个
查看数据手册 →H5AN8G8NDJR
✅ 直接替换✓ 有现货
$24.5 / 个
查看数据手册 →MT40A1G8SA-062E 最大额定值与电气特性
| 存储器类型 | DDR4 SDRAM |
| Density | 8 Gbit |
| 存储组织 | 1G x 8 |
| 数据速率 | 3200 MT/s (DDR4-3200) |
| Clock Frequency | 1.6 GHz |
| Access Time (CAS Latency) | CL22 at 3200 MT/s |
| Row Access Time | 19 ns |
| VDD / VDDQ | 1.2 V +/-60 mV |
| VPP | 2.5 V, -125 mV, +250 mV |
| Internal Banks | 16 banks (4 bank groups x 4 banks) |
| Refresh | 8192-cycle; 64 ms (0-85C), 32 ms (85-95C), 16 ms (>95C) |
| 工作温度 | 0C to +95C (CT range; IT: -40C to +95C) |
| I/O Type | 1.2 V pseudo open-drain |
| Burst Length | BL8, BC4 (burst chop) |
| 封装 | 78-ball FBGA (7.5 x 11 mm) |
| 安装类型 | Surface Mount |
| 特性 | Auto self-refresh, write leveling, dynamic ODT, CRC, auto precharge, ZQ calibration, on-die adjustable VREFDQ |
MT40A1G8SA-062E 78-ball fbga (7.5 x 11 mm) 引脚配置指南
MT40A1G8SA-062E（78-ball fbga (7.5 x 11 mm) 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： MT40A1G8SA-062E.
请参阅 数据手册 以查看完整引脚配置。
典型应用
MT40A1G8SA-062E 适用于 6 应用s: Server and Data Center DIMM Memory, Networking Equipment Line Cards, Industrial Embedded Controllers, High-Performance Computing Workstations, Test and Measurement Instruments, Automotive and Aerospace Embedded Computing.
Server and Data Center DIMM Memory
Server main memory is the primary application for 8Gb DDR4 x8 SDRAMs. The MT40A1G8SA-062E's 8Gb density at 3200 MT/s gives 25.6 GB/s of theoretical peak bandwidth per device, and its 16-bank / 4-bank-group architecture sustains high row-hit rates under interleaved multi-core access patterns. In RDIMM and LRDIMM module designs, the x8 organization pairs naturally with ECC schemes (8 or 16 devices per 64/128-bit channel with check bits). Because the part draws its core from a 1.2V rail, per-GB memory power is roughly 20% lower than equivalent DDR3, which matters directly for data center TCO and rack thermal budgets. Designers should follow fly-by CA routing and per-rank ODT training per JEDEC DDR4 module specifications.
推荐
Networking Equipment Line Cards
Switch, router, and 5G baseband line cards use soldered-down 8Gb DDR4 as deep-packet buffer and flow-table memory. The MT40A1G8SA-062E fits because its DDR4-3200 rate matches the memory controllers integrated into modern network processors and FPGA-based forwarding engines, and its 1.2V pseudo open-drain I/O with on-die adjustable VREFDQ keeps eye margins clean on dense, heavily loaded line-card layouts. The 16-bank organization reduces bank conflicts during concurrent queue management. For outdoor or poorly cooled telecom cabinets, the IT variant with -40C to +95C operation and temperature-scaled refresh (64 ms/32 ms) maintains data retention across the full ambient range. Keep CA fly-by stubs short and use dynamic ODT to terminate point-to-point DQ nets.
推荐
Industrial Embedded Controllers
Industrial PCs, machine-vision controllers, and motion-control platforms need multi-gigabyte DRAM footprints with wide temperature tolerance. The MT40A1G8SA-062E IT variant operates from -40C to +95C, and the datasheet's temperature-dependent refresh (64 ms up to +85C, 32 ms from +85C to +95C, 16 ms above) guarantees retention across the range; note that bandwidth overhead rises at high temperature due to the doubled refresh rate. The 78-ball FBGA (7.5x11 mm) solders directly onto the CPU/SoC board, avoiding SO-DIMM connectors that suffer in vibration-heavy factory environments. Its 1.2V core with 2.5V VPP is easily derived from standard industrial rails via a dedicated DDR4 PMIC and 2-4 A point-of-load converters.
推荐
High-Performance Computing Workstations
GPU-adjacent workstations and compute accelerators use soldered or socketed 8Gb DDR4 x8 devices as host-side bulk memory feeding PCIe/CXL accelerators. The MT40A1G8SA-062E delivers 25.6 GB/s per device at DDR4-3200 with CL22, and multi-rank topologies built from these devices sustain the streaming bandwidth that data-parallel workloads demand. CRC on the DRAM interface (a DDR4 feature supported by this part) protects long board-level traces inside thermally aggressive chassis. Auto precharge and burst-chop 4 allow fine-grained random access for scatter/gather workloads. When paired with a capable DDR4 PHY supporting per-rank ZQ calibration, multi-rank designs train reliably at full speed.
推荐
Test and Measurement Instruments
Oscilloscopes, logic analyzers, and spectrum analyzers require deep acquisition memory with deterministic latency. The MT40A1G8SA-062E's 8Gb per device allows 1 GB per x8 device, and its 16 internal banks support sustained streaming writes at DDR4-3200 while the acquisition engine drains sample data. Auto self-refresh permits graceful power-state transitions between acquisitions, and the CRC feature guards against bit errors on long multi-drop acquisition-bus layouts. Instruments with convection-only cooling benefit from the part's industrial refresh scaling, which explicitly documents behavior up to +95C junction-adjacent ambient. Designers should budget the 2.5V VPP rail precisely, since wordline-boost integrity directly affects retention at temperature extremes.
推荐
Automotive and Aerospace Embedded Computing
Advanced driver-assistance domain controllers, radar processing units, and avionics mission computers use industrial/automotive-qualified 8Gb DDR4 as frame-buffer and map-database memory. The MT40A1G8SA-062E IT grade covers -40C to +95C, and the datasheet's defined refresh at every 15C band makes retention behavior predictable during thermal transient events such as cold crank or solar soak. The soldered 78-FBGA (7.5x11 mm) survives vibration profiles that defeat socketed DIMMs, and 1.2V operation eases compliance with low-voltage power networks. For functional-safety builds, the part's on-die VREFDQ and CRC reduce external failure points; pair with ECC-capable controllers and controller-side scrubbing.
推荐
推荐产品汇总
工程参考数据： MT40A1G8SA-062E ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MT40A1G8SA-062E:E | MT40A1G8SA-075:E | K4A8G085WC-BCTD | H5AN8G8NDJR |
|---|---|---|---|---|---|
| Package | 78-FBGA (7.5x11 mm) | 78-FBGA (7.5x11 mm) - same | 78-FBGA (7.5x11 mm) - same | 78-FBGA - JEDEC compatible | 78-FBGA - JEDEC compatible |
| Brand | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics | SK Hynix |
| Density / Organization | 8 Gbit, 1G x 8 | 8 Gbit, 1G x 8 | 8 Gbit, 1G x 8 | 8 Gbit, 1G x 8 | 8 Gbit, 1G x 8 |
| Data Rate | 3200 MT/s (DDR4-3200) | 3200 MT/s | 2666 MT/s (DDR4-2666) | 3200 MT/s class | 3200 MT/s class |
| VDD / VDDQ | 1.2 V +/-60 mV | 1.2 V +/-60 mV | 1.2 V +/-60 mV | 1.2 V (DDR4 standard) | 1.2 V (DDR4 standard) |
关键差异点
- Full DDR4-3200 speed grade （对比 MT40A1G8SA-075:E)
- Industrial temperature option on the same die （对比 MT40A1G8SA-062E:E)
- Second-source availability across the big-three DRAM vendors （对比 K4A8G085WC-BCTD / H5AN8G8NDJR)
设计说明
Supply the MT40A1G8SA-062E from a dedicated 1.2V VDD/VDDQ rail (tolerance +/-60 mV, i.e., 1.14V-1.26V) and a separate 2.5V VPP rail (2.375V-2.75V). The VPP rail supplies wordline boost and draws low average current but sees burst peaks during activate commands; size it for at least 100 mA per device with local bulk plus 0.1 uF per supply ball. Never share VPP with a heavily loaded 2.5V rail - droop below 2.375V risks retention errors. Power up VDD/VDDQ before or with VPP per the JEDEC DDR4 power-up sequence.
At DDR4-3200, use fly-by routing for clock, command, and address with 30-40 ohm series termination at the controller, and length-match DQ/DQS/DM per byte lane within controller-specific skew windows (typically a few mils per 100 ps of margin). The on-die adjustable VREFDQ removes external reference routing, but still keep DQ nets as short microstrip over a solid ground plane. Use dynamic ODT during writes and verify eye masks during controller training with a real-time scope before freezing the layout.
Estimate: an 8Gb DDR4 device under sustained 3200 MT/s traffic dissipates roughly 0.5-1 W depending on bank activity, and the 78-FBGA (7.5x11 mm) relies on PCB copper for heat spreading. Provide at least 4-6 thermal vias under the package center to inner planes, or the junction-adjacent temperature will approach the +95C limit in sealed enclosures. Remember that refresh doubles above +85C (32 ms) and again above +95C (16 ms for IT range), which raises both power and refresh overhead in hot designs.
Do not substitute the commercial (CT) grade into designs that see below 0C - only the IT variant (-40C to +95C) is characterized for cold environments. Also verify die revision compatibility when second-sourcing within Micron: :E and :R revisions are pin-identical but may differ in support status and revision-specific datasheet addenda; register DRAM configuration (MR registers, ZQ calibration, write leveling) in your bootloader for each specific grade (-062E vs -075:E) rather than assuming one training profile fits all.
合规信息
Lead-free solder-bump FBGA construction per Micron DDR4 SDRAM product line. RoHS/REACH certificates should be pulled from the Micron product page for the specific ordering variant; not stated in the provided data.
