MT40A512M16JY-075E vs H5AN8G6NAFR-VKC 对比
详细并排对比 MT40A512M16JY-075E 出自 Micron Technology 和 H5AN8G6NAFR-VKC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MT40A512M16JY-075E | H5AN8G6NAFR-VKC |
|---|---|---|
| 品牌 | Micron Technology | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $30.50 | $6.25 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 8 Gbit | — |
| 存储组织 | 512M x 16 | 512M x 16 |
| Clock Frequency | 1.33 GHz | — |
| 数据速率 | 2666 MT/s | — |
| Supply Voltage (VDD/VDDQ) | 1.14V to 1.26V | — |
| VPP Voltage | 2.5V (-125mV, +250mV) | — |
| 接口 | Parallel | — |
| 封装 | 96-FBGA (8x14) | FBGA-96 (PBGA96) |
| 安装类型 | Surface Mount | Surface Mount (BGA) |
| 工作温度范围 | 0°C to +95°C (TC) | — |
| Refresh Time | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C | — |
| RoHS 状态 | Compliant | Lead-Free & Halogen-Free, RoHS Compliant |
| 特性 | Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC | — |
| I/O Type | 1.2V pseudo open-drain | — |
| Density | — | 8 Gb |
| Core Supply Voltage | — | 1.2 V |
| Technology | — | CMOS |
| Speed Grade | — | -VKC (DDR4-2666 class, per SK Hynix part numbering) |
| Data Rate Class | — | Up to 2666 MT/s (per -VKC speed code) |
| Family | — | H5AN8G4NAFR / H5AN8G8NAFR / H5AN8G6NAFR |
| Application | — | Main memory (high density, high bandwidth) |
| 工作温度 | — | [DATA_NEEDED: operating temperature range] |
| Refresh | — | [DATA_NEEDED: refresh mode specification] |
| CAS 延迟 | — | [DATA_NEEDED: CAS latency for -VKC bin] |
| Package Dimensions | — | [DATA_NEEDED: package dimensions] |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |