MT40A512M16JY-075E - 8Gb DDR4 SDRAM 512Mx16 | Micron
料号： MT40A512M16JY-075E ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $40.98 | $40.98 |
| 10 | $38.5 | $385.00 |
| 100 | $35.2 | $3,520.00 |
| 500 | $32.8 | $16,400.00 |
| 1,000 | $30.5 | $30,500.00 |
MT40A512M16JY-075E 概述
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to single-data-rate SDRAM. It is the fourth generation of DDR memory, offering higher speed, lower power consumption, and increased density compared to DDR3. DDR4 operates at a lower voltage (1.2V) than DDR3 (1.5V), reducing power consumption and heat generation. It is widely used in servers, desktops, laptops, and embedded systems where high bandwidth and capacity are required.
Key features of the MT40A512M16JY-075E include a refresh time of 8192 cycles, with 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, and 16ms at >95°C. It supports auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, and CRC functions. The device is RoHS compliant and operates over a temperature range of 0°C to +95°C (TC). These features ensure reliable operation in demanding environments.
Technically, the MT40A512M16JY-075E utilizes Micron's advanced DRAM process technology, enabling high-speed data transfer with low power consumption. The 96-ball FBGA package provides excellent thermal and electrical performance, with a compact footprint suitable for space-constrained designs. The device supports a parallel interface, simplifying integration with memory controllers.
Typical applications include high-performance computing, servers, networking equipment, and industrial systems where high memory bandwidth and capacity are critical. The 512M x 16 organization is ideal for systems requiring 16-bit data bus width, such as embedded processors and FPGAs.
When designing with this component, ensure proper decoupling capacitors are placed near the VDD and VDDQ pins to minimize noise. Follow the PCB layout guidelines in the Micron DDR4 datasheet to maintain signal integrity at high speeds.
直接替换替代料： MT40A512M16JY-075E ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： MT40A512M16JY-075E （相同外形与封装尺寸） ——差异在于 Package, Data Rate, Operating Temperature, Refresh, Speed Grade.
快速对比工具——选择替代料号进行并排对比：
MT40A512M16JY-075E IT:B
✅ 直接替换📋 参考替代料（不在目录中）
MT40A512M16JY-075E AIT:B
✅ 直接替换📋 参考替代料（不在目录中）
MT40A512M16LY-075E
✅ 直接替换📋 参考替代料（不在目录中）
MT40A512M16TB-062E:R
✅ 直接替换✓ 有现货
$60 / 个
查看数据手册 →K4A8G165WB-BCTD
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$37 / 个
查看数据手册 →H5AN8G6NDJR-XNC
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$55.6818 / 个
查看数据手册 →MT40A512M16JY-075E 最大额定值与电气特性
| 存储器类型 | DDR4 SDRAM |
| 存储容量 | 8 Gbit |
| 存储组织 | 512M x 16 |
| Clock Frequency | 1.33 GHz |
| 数据速率 | 2666 MT/s |
| Supply Voltage (VDD/VDDQ) | 1.14V to 1.26V |
| VPP Voltage | 2.5V (-125mV, +250mV) |
| 接口 | Parallel |
| 封装 | 96-FBGA (8x14) |
| 安装类型 | Surface Mount |
| 工作温度范围 | 0°C to +95°C (TC) |
| Refresh Time | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C |
| RoHS 状态 | Compliant |
| 特性 | Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC |
| I/O Type | 1.2V pseudo open-drain |
MT40A512M16JY-075E 引脚配置
| 引脚 A1 | VDD — Power supply |
| 引脚 A2 | DQ0 — Data input/output 0 |
| 引脚 A3 | DQ1 — Data input/output 1 |
| 引脚 A4 | VSS — Ground |
| 引脚 A5 | DQ2 — Data input/output 2 |
| 引脚 A6 | DQ3 — Data input/output 3 |
| 引脚 A7 | VDDQ — I/O power supply |
| 引脚 A8 | DQ4 — Data input/output 4 |
| 引脚 A9 | DQ5 — Data input/output 5 |
| 引脚 A10 | VSS — Ground |
| 引脚 A11 | DQ6 — Data input/output 6 |
| 引脚 A12 | DQ7 — Data input/output 7 |
| 引脚 B1 | VPP — Word line power supply |
| 引脚 B2 | DQ8 — Data input/output 8 |
| 引脚 B3 | DQ9 — Data input/output 9 |
| 引脚 B4 | VSS — Ground |
| 引脚 B5 | DQ10 — Data input/output 10 |
| 引脚 B6 | DQ11 — Data input/output 11 |
| 引脚 B7 | VDDQ — I/O power supply |
| 引脚 B8 | DQ12 — Data input/output 12 |
| 引脚 B9 | DQ13 — Data input/output 13 |
| 引脚 B10 | VSS — Ground |
| 引脚 B11 | DQ14 — Data input/output 14 |
| 引脚 B12 | DQ15 — Data input/output 15 |
典型应用
MT40A512M16JY-075E 适用于 6 应用s: High-Performance Computing, Networking Equipment, Industrial Automation, Embedded Systems, Data Center Servers, Automotive Infotainment.
High-Performance Computing
The MT40A512M16JY-075E provides 8Gbit DDR4 memory with 1.33 GHz clock speed, ideal for HPC systems requiring high bandwidth and capacity. Its 512M x 16 organization supports wide data buses, and the low 1.2V supply reduces power consumption in dense server configurations. The parallel interface simplifies integration with high-speed memory controllers, enabling efficient data processing in scientific simulations and data analytics.
推荐
Networking Equipment
In networking switches and routers, the MT40A512M16JY-075E offers high-speed data buffering with 2666 MT/s data rate, ensuring low latency packet processing. Its 8Gbit density supports large routing tables and packet buffers. The device's auto self-refresh and CRC features enhance reliability in continuous operation. The 96-FBGA package allows compact board designs, critical for high-port-count equipment.
推荐
Industrial Automation
The MT40A512M16JY-075E operates over 0°C to +95°C, suitable for industrial environments. Its 8Gbit capacity supports complex control algorithms and data logging. The device's write leveling and dynamic on-chip termination ensure signal integrity in noisy industrial settings. The 1.2V operation reduces heat generation, enhancing reliability in sealed enclosures.
推荐
Embedded Systems
For embedded applications like IoT gateways and edge computing, the MT40A512M16JY-075E provides a balance of performance and power efficiency. Its 8Gbit density supports multitasking and local data processing. The 96-FBGA package is compact, fitting space-constrained designs. The device's low voltage operation extends battery life in portable embedded systems.
推荐
Data Center Servers
The MT40A512M16JY-075E is designed for server memory modules, offering high density and speed for virtualization and cloud computing. Its 1.33 GHz clock and 8Gbit capacity enable fast data access and large memory pools. The device's auto precharge and data mask functions optimize memory bandwidth. The 1.2V supply reduces power consumption in large-scale data centers.
推荐
Automotive Infotainment
The MT40A512M16JY-075E AIT:B variant is suitable for automotive infotainment systems, providing high-speed memory for navigation, multimedia, and driver assistance. Its 8Gbit capacity supports complex graphics and real-time processing. The device's wide temperature range and reliability make it ideal for in-vehicle use. The 96-FBGA package withstands vibration and thermal cycling.
推荐
推荐产品汇总
工程参考数据： MT40A512M16JY-075E ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MT40A512M16JY-075E IT:B | MT40A512M16JY-075E AIT:B | MT40A512M16LY-075E | MT40A512M16TB-062E:R | K4A8G165WB-BCTD | H5AN8G6NDJR-XNC |
|---|---|---|---|---|---|---|---|
| Package | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics | SK Hynix |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Clock Frequency | 1.33 GHz | 1.33 GHz | 1.33 GHz | 1.33 GHz | 1.6 GHz | 1.33 GHz | 1.33 GHz |
| Supply Voltage (VDD/VDDQ) | 1.14V to 1.26V | 1.14V to 1.26V | 1.14V to 1.26V | 1.14V to 1.26V | 1.14V to 1.26V | 1.14V to 1.26V | 1.14V to 1.26V |
| Operating Temperature Range | 0°C to +95°C | -40°C to +95°C | -40°C to +125°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
关键差异点
- High density 8Gbit in 512Mx16 organization （对比 MT40A512M16LY-075E)
- Wide temperature range options （对比 K4A8G165WB-BCTD)
- Proven Micron quality and reliability （对比 H5AN8G6NDJR-XNC)
设计说明
For high-speed DDR4 signals, maintain controlled impedance of 40-50 ohms for data lines and 39 ohms for address/command lines. Use ground planes beneath the memory device to minimize noise. Follow Micron's DDR4 PCB design guidelines for trace length matching and termination.
Decouple VDD and VDDQ with 0.1uF and 1uF ceramic capacitors placed close to the pins. Use a 4.7uF bulk capacitor for VPP. Ensure the power supply can handle transient currents during refresh and read/write operations.
The MT40A512M16JY-075E operates up to +95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The 96-FBGA package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values.
合规信息
RoHS compliance confirmed by JLCPCB listing. AEC-Q100 not applicable for standard grade; automotive variant AIT:B may be qualified.
