MT40A512M16JY-083E vs NT5AD512M16C4-JRU 对比
详细并排对比 MT40A512M16JY-083E 出自 Micron Technology 和 NT5AD512M16C4-JRU 出自 Nanya Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT40A512M16JY-083E - 8Gb DDR4 SDRAM 2400MT/s x16 | Micron
MT40A512M16JY-083E ✓ 量产中Nanya Technology
NT5AD512M16C4-JRU - DDR4 8Gb 512Mx16 Industrial SDRAM | Nanya
NT5AD512M16C4-JRU ✓ 量产中规格对比
| 参数 | MT40A512M16JY-083E | NT5AD512M16C4-JRU |
|---|---|---|
| 品牌 | Micron Technology | Nanya Technology |
| 分类 | DRAM | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $5.85 | $83.00 |
| 存储器类型 | DDR4 SDRAM (Automotive) | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gbit |
| 存储组织 | 512M x 16 | 512M x 16 |
| Clock Frequency | 1.2 GHz (tCK = 0.83 ns) | 1600 MHz (3200 Mbps data rate) |
| 数据速率 | 2400 MT/s (speed grade -083E) | — |
| VDD Supply Voltage | 1.2 V +/- 60 mV | — |
| VDDQ Supply Voltage | 1.2 V +/- 60 mV | — |
| VPP Supply Voltage | 2.5 V, -125 mV, +250 mV | — |
| I/O Interface | 1.2 V pseudo open-drain | — |
| VREFDQ | On-die internal adjustable generation | — |
| Refresh Structure | 8192-cycle refresh | — |
| Refresh Window | 64 ms at -40C to 85C; 32 ms at >85C to 95C; 16 ms at >95C | — |
| 封装 | 96-FBGA (8 x 14 mm) | 96-ball FBGA (PBGA96) |
| 安装类型 | Surface Mount | Surface Mount |
| ECCN | EAR99 | — |
| 无卤 | Compliant | — |
| Country of Origin | China | — |
| CAS Latency (CL) | — | 22 at 1600 MHz |
| Supply Voltage (VDD) | — | 1.2 V |
| 工作温度 | — | -40 C to +95 C (industrial grade) |
| 接口 | — | CMOS, DDR4 |
| Auto Self-Refresh | — | Yes |
| Built-in Temperature Sensor | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask (DM) | — | Yes |
| Write Leveling | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| RoHS 状态 | — | Green Product (per Nanya product page) |