MT40A512M16LY-062E AAT:E vs MT40A512M16LY-062E:E 对比

详细并排对比 MT40A512M16LY-062E AAT:E 出自 Micron Technology 和 MT40A512M16LY-062E:E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT40A512M16LY-062E AAT:E MT40A512M16LY-062E AAT:E - 8Gbit DDR4 SDRAM 1.6GHz | Micron

MT40A512M16LY-062E AAT:E - 8Gbit DDR4 SDRAM 1.6GHz | Micron

MT40A512M16LY-062E AAT:E ✓ 量产中
Micron Technology
MT40A512M16LY-062E:E MT40A512M16LY-062E:E - 8Gb DDR4-3200 x16 SDRAM | Micron

MT40A512M16LY-062E:E - 8Gb DDR4-3200 x16 SDRAM | Micron

MT40A512M16LY-062E:E ✓ 量产中

规格对比

参数 MT40A512M16LY-062E AAT:E MT40A512M16LY-062E:E
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $9.20 $34.99
存储器类型 DDR4 SDRAM SDRAM - DDR4
存储容量 8 Gbit (1 GB) —
Memory Organization 512M x 16 —
接口 Parallel Parallel (LVCMOS / SSTL)
Clock Frequency 1.6 GHz 1600 MHz (DDR4-3200, -062E speed grade)
Access Time 19 ns —
电源电压 1.2 V —
Speed Grade 062E —
封装 96-FBGA (7.5 x 13.5 mm) —
安装类型 Surface Mount Surface Mount
工作温度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: exact operating temp range for -062E:E base part; IT:E variant is -40C to +95C per Micron]
Package Height [DATA_NEEDED: package max height] —
MSL Rating [DATA_NEEDED: moisture sensitivity level] —
Ordering Code Suffix AAT:E (temperature/package option per Micron code) —
RoHS 状态 Compliant Compliant
Moisture Packaging [DATA_NEEDED: packing type for AAT:E suffix] —
Data Rate Class DDR4-3200 (062E speed bin) —
Density — 8 Gbit (512M x 16)
存储组织 — x16
数据速率 — 3200 MT/s
Access Time (tRCD/tRP) — 19 ns (per DigiKey listing)
Voltage - Supply (VDD) — 1.2 V (typical), 1.14 V min / 1.26 V max
Voltage - VPP — 2.5 V (typical)
封装 / 外壳 — 96-TFBGA (7.5 x 13.5 mm)
Refresh Cycles — 65536
On-Die Termination — Yes (ODT)
Write Leveling — Yes
ZQ Calibration — Yes
CRC Function — Yes (data channel)
Data Mask Function — Yes
Auto Precharge — Yes
Auto Self-Refresh — Yes (LPASR)
Asynchronous Reset — Yes

数据手册与资源

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