MT40A512M16LY-062E:E vs MT40A512M16LY-062E AAT:E 对比

详细并排对比 MT40A512M16LY-062E:E 出自 Micron Technology 和 MT40A512M16LY-062E AAT:E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT40A512M16LY-062E:E MT40A512M16LY-062E:E - 8Gb DDR4-3200 x16 SDRAM | Micron

MT40A512M16LY-062E:E - 8Gb DDR4-3200 x16 SDRAM | Micron

MT40A512M16LY-062E:E ✓ 量产中
Micron Technology
MT40A512M16LY-062E AAT:E MT40A512M16LY-062E AAT:E - 8Gbit DDR4 SDRAM 1.6GHz | Micron

MT40A512M16LY-062E AAT:E - 8Gbit DDR4 SDRAM 1.6GHz | Micron

MT40A512M16LY-062E AAT:E ✓ 量产中

规格对比

参数 MT40A512M16LY-062E:E MT40A512M16LY-062E AAT:E
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $34.99 $9.20
存储器类型 SDRAM - DDR4 DDR4 SDRAM
Density 8 Gbit (512M x 16) —
存储组织 x16 —
Clock Frequency 1600 MHz (DDR4-3200, -062E speed grade) 1.6 GHz
数据速率 3200 MT/s —
Access Time (tRCD/tRP) 19 ns (per DigiKey listing) —
Voltage - Supply (VDD) 1.2 V (typical), 1.14 V min / 1.26 V max —
Voltage - VPP 2.5 V (typical) —
接口 Parallel (LVCMOS / SSTL) Parallel
封装 / 外壳 96-TFBGA (7.5 x 13.5 mm) —
安装类型 Surface Mount Surface Mount
工作温度 [DATA_NEEDED: exact operating temp range for -062E:E base part; IT:E variant is -40C to +95C per Micron] [DATA_NEEDED: operating temperature range]
Refresh Cycles 65536 —
On-Die Termination Yes (ODT) —
Write Leveling Yes —
ZQ Calibration Yes —
CRC Function Yes (data channel) —
Data Mask Function Yes —
Auto Precharge Yes —
Auto Self-Refresh Yes (LPASR) —
Asynchronous Reset Yes —
RoHS 状态 Compliant Compliant
存储容量 — 8 Gbit (1 GB)
Memory Organization — 512M x 16
Access Time — 19 ns
电源电压 — 1.2 V
Speed Grade — 062E
封装 — 96-FBGA (7.5 x 13.5 mm)
Package Height — [DATA_NEEDED: package max height]
MSL Rating — [DATA_NEEDED: moisture sensitivity level]
Ordering Code Suffix — AAT:E (temperature/package option per Micron code)
Moisture Packaging — [DATA_NEEDED: packing type for AAT:E suffix]
Data Rate Class — DDR4-3200 (062E speed bin)

数据手册与资源

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