MT40A512M16LY-062E:E vs MT40A512M16LY-062E-ATE 对比
详细并排对比 MT40A512M16LY-062E:E 出自 Micron Technology 和 MT40A512M16LY-062E-ATE 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT40A512M16LY-062E:E - 8Gb DDR4-3200 x16 SDRAM | Micron
MT40A512M16LY-062E:E ✓ 量产中Micron Technology
MT40A512M16LY-062E-ATE - 8Gb DDR4-3200 SDRAM | Micron
MT40A512M16LY-062E-ATE ✓ 量产中规格对比
| 参数 | MT40A512M16LY-062E:E | MT40A512M16LY-062E-ATE |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $34.99 | $34.10 |
| 存储器类型 | SDRAM - DDR4 | DDR4 SDRAM |
| Density | 8 Gbit (512M x 16) | 8 Gbit |
| 存储组织 | x16 | 512M x 16 |
| Clock Frequency | 1600 MHz (DDR4-3200, -062E speed grade) | 1.6 GHz |
| 数据速率 | 3200 MT/s | 3200 MT/s (DDR4-3200) |
| Access Time (tRCD/tRP) | 19 ns (per DigiKey listing) | — |
| Voltage - Supply (VDD) | 1.2 V (typical), 1.14 V min / 1.26 V max | — |
| Voltage - VPP | 2.5 V (typical) | — |
| 接口 | Parallel (LVCMOS / SSTL) | — |
| 封装 / 外壳 | 96-TFBGA (7.5 x 13.5 mm) | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: exact operating temp range for -062E:E base part; IT:E variant is -40C to +95C per Micron] | -40C to +105C (automotive) |
| Refresh Cycles | 65536 | — |
| On-Die Termination | Yes (ODT) | Yes (ODT) |
| Write Leveling | Yes | — |
| ZQ Calibration | Yes | Yes |
| CRC Function | Yes (data channel) | — |
| Data Mask Function | Yes | — |
| Auto Precharge | Yes | — |
| Auto Self-Refresh | Yes (LPASR) | — |
| Asynchronous Reset | Yes | — |
| RoHS 状态 | Compliant | Compliant |
| Access Time | — | 19 ns |
| Supply Voltage (VDD) | — | 1.2 V |
| Supply Voltage (VPP) | — | 2.5 V |
| 封装 | — | 96-ball FBGA (7.5 x 13.5 mm) |
| Ball Pitch | — | 0.8 mm |
| Speed Grade | — | -062E (0.625 ns tCK) |
| Data Mask | — | Yes (DM) |
| Refresh Mode | — | Auto self-refresh |