MT40A512M16TB-062E vs MT40A512M16LY-075:E 对比

详细并排对比 MT40A512M16TB-062E 出自 Micron Technology 和 MT40A512M16LY-075:E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT40A512M16TB-062E MT40A512M16TB-062E - 8Gb DDR4 SDRAM 512Mx16 | Micron

MT40A512M16TB-062E - 8Gb DDR4 SDRAM 512Mx16 | Micron

MT40A512M16TB-062E ✓ 量产中
Micron Technology
MT40A512M16LY-075:E MT40A512M16LY-075:E - 8Gb DDR4 SDRAM 2666MT/s | Micron

MT40A512M16LY-075:E - 8Gb DDR4 SDRAM 2666MT/s | Micron

MT40A512M16LY-075:E ✓ 量产中

规格对比

参数 MT40A512M16TB-062E MT40A512M16LY-075:E
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $60.00 $5.80
存储器类型 DDR4 SDRAM DDR4 SDRAM
存储容量 8 Gbit 8 Gbit (512M x 16)
存储组织 512M x 16 —
数据速率 1600 MHz (DDR4-3200) 2666 MT/s
Supply Voltage - VDD/VDDQ 1.2V ±60mV —
Supply Voltage - VPP 2.5V, -125mV, +250mV —
tRCD 19 ns —
Refresh Time 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C
工作温度范围 0°C to +95°C (standard), -40°C to +95°C (IT) 0°C to +95°C
封装 96-FBGA (7.5x13 mm) 96-FBGA (7.5x13.5mm)
安装类型 Surface Mount Surface Mount
接口 Parallel Parallel
特性 Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration —
RoHS 状态 Compliant —
REACH Status Compliant —
Clock Frequency — 1.33 GHz
CAS 延迟 — 19
Supply Voltage (VDD/VDDQ) — 1.2V ±60mV
VPP Supply — 2.5V (-125mV, +250mV)
Internal Banks (x16) — 8 banks (4 groups of 2)
I/O Type — 1.2V pseudo open-drain
RoHS — Compliant

数据手册与资源

浏览全部产品 创建 BOM 获取报价