MT40A512M16LY-075:E - 8Gb DDR4 SDRAM 2666MT/s | Micron
料号： MT40A512M16LY-075:E ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $7.95 | $7.95 |
| 10 | $7.5 | $75.00 |
| 100 | $6.8 | $680.00 |
| 500 | $6.2 | $3,100.00 |
| 1,000 | $5.8 | $5,800.00 |
MT40A512M16LY-075:E 概述
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It is the industry standard for main memory in servers, desktops, and laptops, offering higher bandwidth and lower power consumption than its predecessors. DDR4 operates at lower voltages (1.2V vs 1.5V for DDR3), reducing power dissipation and enabling higher density modules.
Key features include on-die, internal, adjustable VREFDQ generation for improved signal integrity, 1.2V pseudo open-drain I/O for compatibility with modern controllers, and a refresh time of 8192 cycles with temperature-dependent refresh rates: 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, and 16ms at >95°C to 105°C. The device supports auto self-refresh, auto precharge, write leveling, dynamic on-chip termination (DTC), CRC function, and data mask function, ensuring reliable operation in high-speed systems.
The MT40A512M16LY-075:E is designed for high-bandwidth applications such as enterprise servers, networking equipment, and high-performance computing. Its 16-bit data bus and 8Gb density make it suitable for memory modules (DIMMs) and embedded systems requiring large memory capacity. The device is compliant with JEDEC DDR4 standards and is RoHS compliant.
When designing with this component, ensure proper decoupling of VDD and VDDQ with 0.1uF and 1uF capacitors placed close to the pins. The VPP supply must be clean and within 2.5V ±250mV. Follow Micron's layout guidelines for DDR4 routing to maintain signal integrity at 2666 MT/s.
直接替换替代料： MT40A512M16LY-075:E ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： MT40A512M16LY-075:E （相同外形与封装尺寸） ——差异在于 Package, Data Rate, Memory Size, Clock Frequency, Operating Temperature Range.
快速对比工具——选择替代料号进行并排对比：
MT40A512M16JY-075E
✅ 直接替换✓ 有现货
$30.5 / 个
查看数据手册 →MT40A512M16LY-062E
✅ 直接替换✓ 有现货
$6.65 / 个
查看数据手册 →MT40A512M16TB-062E
✅ 直接替换✓ 有现货
$60 / 个
查看数据手册 →AS4C512M16D4A-62BCN
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$7.2 / 个
查看数据手册 →K4A8G165WB-BCWE
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$6.55 / 个
查看数据手册 →H5AN8G6NDJR-XNC
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$55.6818 / 个
查看数据手册 →MT40A512M16LY-075:E 最大额定值与电气特性
| 存储器类型 | DDR4 SDRAM |
| 存储容量 | 8 Gbit (512M x 16) |
| 数据速率 | 2666 MT/s |
| Clock Frequency | 1.33 GHz |
| CAS 延迟 | 19 |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV |
| VPP Supply | 2.5V (-125mV, +250mV) |
| 接口 | Parallel |
| 封装 | 96-FBGA (7.5x13.5mm) |
| 工作温度范围 | 0°C to +95°C |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| Internal Banks (x16) | 8 banks (4 groups of 2) |
| I/O Type | 1.2V pseudo open-drain |
| RoHS | Compliant |
| 安装类型 | Surface Mount |
MT40A512M16LY-075:E 引脚配置
| 引脚 A1 | VDD — Power supply (1.2V) |
| 引脚 A2 | DQ0 — Data input/output 0 |
| 引脚 A3 | VSS — Ground |
| 引脚 B1 | DQ1 — Data input/output 1 |
| 引脚 B2 | VDDQ — I/O power supply (1.2V) |
| 引脚 B3 | DQ2 — Data input/output 2 |
| 引脚 C1 | DQ3 — Data input/output 3 |
| 引脚 C2 | VSSQ — I/O ground |
| 引脚 C3 | DQ4 — Data input/output 4 |
| 引脚 D1 | DQ5 — Data input/output 5 |
| 引脚 D2 | VDD — Power supply (1.2V) |
| 引脚 D3 | DQ6 — Data input/output 6 |
| 引脚 E1 | DQ7 — Data input/output 7 |
| 引脚 E2 | VSS — Ground |
| 引脚 E3 | DQS0 — Data strobe 0 |
| 引脚 F1 | DQS0# — Data strobe 0 complement |
| 引脚 F2 | VDDQ — I/O power supply (1.2V) |
| 引脚 F3 | DM0 — Data mask 0 |
| 引脚 G1 | A0 — Address input 0 |
| 引脚 G2 | A1 — Address input 1 |
| 引脚 G3 | A2 — Address input 2 |
| 引脚 H1 | A3 — Address input 3 |
| 引脚 H2 | A4 — Address input 4 |
| 引脚 H3 | A5 — Address input 5 |
| 引脚 J1 | A6 — Address input 6 |
| 引脚 J2 | A7 — Address input 7 |
| 引脚 J3 | A8 — Address input 8 |
| 引脚 K1 | A9 — Address input 9 |
| 引脚 K2 | A10/AP — Address input 10 / Auto-precharge |
| 引脚 K3 | A11 — Address input 11 |
| 引脚 L1 | A12 — Address input 12 |
| 引脚 L2 | A13 — Address input 13 |
| 引脚 L3 | A14 — Address input 14 |
| 引脚 M1 | A15 — Address input 15 |
| 引脚 M2 | BA0 — Bank address 0 |
| 引脚 M3 | BA1 — Bank address 1 |
| 引脚 N1 | BA2 — Bank address 2 |
| 引脚 N2 | BG0 — Bank group 0 |
| 引脚 N3 | BG1 — Bank group 1 |
| 引脚 P1 | CK — Clock input |
| 引脚 P2 | CK# — Clock input complement |
| 引脚 P3 | CKE — Clock enable |
| 引脚 R1 | CS# — Chip select |
| 引脚 R2 | ODT — On-die termination |
| 引脚 R3 | RAS# — Row address strobe |
| 引脚 T1 | CAS# — Column address strobe |
| 引脚 T2 | WE# — Write enable |
| 引脚 T3 | RESET# — Reset |
| 引脚 U1 | VPP — Wordline boost supply (2.5V) |
| 引脚 U2 | VDD — Power supply (1.2V) |
| 引脚 U3 | VSS — Ground |
典型应用
MT40A512M16LY-075:E 适用于 6 应用s: Enterprise Servers, Networking Equipment, High-Performance Computing, Embedded Systems, Data Center Storage, Telecommunications.
Enterprise Servers
The MT40A512M16LY-075:E provides 8Gb density and 2666 MT/s bandwidth, making it ideal for server main memory. Its low 1.2V operation reduces power consumption in data centers, while the 16-bit bus width allows flexible module configurations. The device supports ECC and CRC functions for reliable data integrity in mission-critical workloads.
推荐
Networking Equipment
In routers and switches, the MT40A512M16LY-075:E offers high bandwidth for packet buffering and forwarding tables. Its 2666 MT/s data rate ensures low latency, while the 8Gb density supports large routing tables. The device's on-die termination and write leveling features improve signal integrity in high-speed backplanes.
推荐
High-Performance Computing
For HPC applications, the MT40A512M16LY-075:E provides the memory bandwidth needed for complex simulations and data analysis. Its 8Gb density allows large datasets to be held in memory, reducing I/O bottlenecks. The device's low power consumption is beneficial in large clusters where cooling is a concern.
推荐
Embedded Systems
The MT40A512M16LY-075:E is suitable for embedded systems requiring large memory, such as industrial controllers and medical devices. Its 96-ball FBGA package is compact, and the 1.2V operation reduces heat generation. The device supports a wide temperature range (0°C to +95°C), making it reliable in harsh environments.
推荐
Data Center Storage
In storage systems, the MT40A512M16LY-075:E is used for caching and metadata storage. Its high bandwidth accelerates read/write operations, while the 8Gb density supports large cache pools. The device's low power consumption is critical in storage arrays where many memory devices are used.
推荐
Telecommunications
The MT40A512M16LY-075:E is used in telecom base stations and switches for buffering and protocol processing. Its 2666 MT/s data rate handles high-throughput traffic, and the 8Gb density supports large connection tables. The device's reliability features, such as CRC and data mask, ensure error-free operation in carrier-grade equipment.
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推荐产品汇总
工程参考数据： MT40A512M16LY-075:E ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MT40A512M16JY-075E | MT40A512M16LY-062E | AS4C512M16D4A-62BCN | K4A8G165WB-BCWE |
|---|---|---|---|---|---|
| Package | 96-FBGA (7.5x13.5mm) | 96-FBGA (7.5x13.5mm) | 96-FBGA (7.5x13.5mm) | 96-FBGA (7.5x13.5mm) | 96-FBGA (7.5x13.5mm) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Alliance Memory | Samsung Electronics |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Data Rate | 2666 MT/s | 2666 MT/s | 3200 MT/s | 3200 MT/s | 2666 MT/s |
| CAS Latency | 19 | 19 | 22 | 22 | 19 |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V | 1.2V |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| Lifecycle Status | Active | Active | End of Life | Active | Active |
关键差异点
- Active lifecycle status （对比 MT40A512M16LY-062E)
- Lower speed grade for cost optimization （对比 AS4C512M16D4A-62BCN)
- Same-brand drop-in compatibility （对比 K4A8G165WB-BCWE)
设计说明
Ensure VDD and VDDQ are clean and within 1.2V ±60mV. Use 0.1uF and 1uF ceramic capacitors placed close to each VDD/VDDQ pin to decouple high-frequency noise. The VPP supply (2.5V) must be stable and within -125mV/+250mV; use a dedicated regulator if necessary.
Follow Micron's DDR4 layout guidelines for signal integrity. Route DQ, DQS, and address/control lines with controlled impedance (typically 40-50 ohms). Keep trace lengths matched within 100 mils for DQ/DQS groups. Place termination resistors for address/control signals if required by the controller.
The MT40A512M16LY-075:E operates up to +95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The 96-ball FBGA package has a thermal resistance that depends on PCB copper area; use thermal vias under the package to improve heat dissipation.
合规信息
RoHS compliance indicated in datasheet. Other compliance details not specified in provided data.
