MT40A512M8RH-075E:B vs K4A4G085WD-BCRC 对比
详细并排对比 MT40A512M8RH-075E:B 出自 Micron Technology 和 K4A4G085WD-BCRC 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MT40A512M8RH-075E:B | K4A4G085WD-BCRC |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.15 | $3.58 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM (D-die) |
| Density | 4 Gbit | — |
| 存储组织 | 512M x 8 | 512M x 8 |
| 数据速率 | 2666 MT/s (DDR4-2666) | 2400 Mb/s (PC2400) |
| Clock Frequency | 1333 MHz (1.33 GHz) | — |
| VDD Supply Voltage | 1.2 V +/-60 mV | — |
| VDDQ Supply Voltage | 1.2 V +/-60 mV | — |
| VPP Supply Voltage | 2.5 V, -125 mV/+250 mV | — |
| 接口类型 | Parallel | — |
| I/O Structure | 1.2V pseudo open-drain | — |
| 基准电压 | On-die internal adjustable VREFDQ generation | — |
| 封装 | 78-FBGA (9 x 10.5 mm), TFBGA | FBGA-78 (TFBGA) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: operating temperature range (standard grade)] | — |
| Refresh | Refresh max interval extension at extended TC temperature range (125C capable per family features) | [DATA_NEEDED: Refresh specification] |
| Speed Grade Suffix | -075E | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS Status] |
| Packaging Option Suffix | :B (ball map B designation per Mouser listing) | — |
| Memory Density | — | 4 Gbit |
| 电源电压 | — | 1.2 V |
| Number of Terminals | — | 78 |
| 接口 | — | Parallel |
| Access Mode | — | Multi-bank page burst |
| CAS 延迟 | — | [DATA_NEEDED: CAS Latency] |
| 工作温度范围 | — | [DATA_NEEDED: Operating Temperature Range] |
| MSL 等级 | — | [DATA_NEEDED: MSL Level] |