MT41K256M16 vs MT41K256M16RE-125:D 对比

详细并排对比 MT41K256M16 出自 Micron Technology 和 MT41K256M16RE-125:D 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT41K256M16 MT41K256M16 - 4Gb DDR3L SDRAM 1.35V x16 | Micron Technology

MT41K256M16 - 4Gb DDR3L SDRAM 1.35V x16 | Micron Technology

MT41K256M16 ✓ 量产中
Micron Technology
MT41K256M16RE-125:D MT41K256M16RE-125:D - 4Gb DDR3L SDRAM 256Mx16 | Micron

MT41K256M16RE-125:D - 4Gb DDR3L SDRAM 256Mx16 | Micron

MT41K256M16RE-125:D ✓ 量产中

规格对比

参数 MT41K256M16 MT41K256M16RE-125:D
品牌 Micron Technology Micron Technology
分类 DRAM Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.42 $4.19
存储器类型 DDR3L SDRAM (1.35V) DDR3L SDRAM
存储容量 4 Gbit —
存储组织 256M x 16 256M x 16
Supply Voltage (VDD/VDDQ) 1.35 V (1.5V-compatible mode supported) —
Banks 8 —
封装 96-ball FBGA FBGA-96 (9x14 mm)
安装类型 Surface Mount —
Speed Grade Options -093 (2133 MT/s), -107 (1866 MT/s), -125 (1600 MT/s) [per family ordering options] —
接口 Parallel, source-synchronous DDR —
On-Die Termination Yes (ODT) Yes
工作温度 [DATA_NEEDED: operating temperature range for the full MPN suffix] 0C to +95C (TC)
Refresh 8K refresh cycles / 64 ms —
CAS Latency Options [DATA_NEEDED: CL options for the full MPN suffix] —
Die Revision Refer to DDR3 (1.5V) SDRAM Die Rev :E datasheet for 1.5V mode specs —
RoHS 状态 Compliant —
ECCN EAR99 —
Lead Free Yes (per DigiKey product listing) —
Density — 4 Gb
电源电压 — 1.35 V
数据速率 — 1600 MT/s
CAS 延迟 — 11
RoHS — Compliant
Lead-Free — Yes
Burst Length — 8, 4
Auto-Refresh — Yes
Self-Refresh — Yes
Ball Pitch — 0.8 mm

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