MT41K256M16RE-125:D vs MT41K256M16 对比

详细并排对比 MT41K256M16RE-125:D 出自 Micron Technology 和 MT41K256M16 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT41K256M16RE-125:D MT41K256M16RE-125:D - 4Gb DDR3L SDRAM 256Mx16 | Micron

MT41K256M16RE-125:D - 4Gb DDR3L SDRAM 256Mx16 | Micron

MT41K256M16RE-125:D ✓ 量产中
Micron Technology
MT41K256M16 MT41K256M16 - 4Gb DDR3L SDRAM 1.35V x16 | Micron Technology

MT41K256M16 - 4Gb DDR3L SDRAM 1.35V x16 | Micron Technology

MT41K256M16 ✓ 量产中

规格对比

参数 MT41K256M16RE-125:D MT41K256M16
品牌 Micron Technology Micron Technology
分类 Memory ICs DRAM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $4.19 $2.42
存储器类型 DDR3L SDRAM DDR3L SDRAM (1.35V)
Density 4 Gb —
存储组织 256M x 16 256M x 16
电源电压 1.35 V —
数据速率 1600 MT/s —
CAS 延迟 11 —
封装 FBGA-96 (9x14 mm) 96-ball FBGA
工作温度 0C to +95C (TC) [DATA_NEEDED: operating temperature range for the full MPN suffix]
RoHS Compliant —
Lead-Free Yes —
Burst Length 8, 4 —
On-Die Termination Yes Yes (ODT)
Auto-Refresh Yes —
Self-Refresh Yes —
Ball Pitch 0.8 mm —
存储容量 — 4 Gbit
Supply Voltage (VDD/VDDQ) — 1.35 V (1.5V-compatible mode supported)
Banks — 8
安装类型 — Surface Mount
Speed Grade Options — -093 (2133 MT/s), -107 (1866 MT/s), -125 (1600 MT/s) [per family ordering options]
接口 — Parallel, source-synchronous DDR
Refresh — 8K refresh cycles / 64 ms
CAS Latency Options — [DATA_NEEDED: CL options for the full MPN suffix]
Die Revision — Refer to DDR3 (1.5V) SDRAM Die Rev :E datasheet for 1.5V mode specs
RoHS 状态 — Compliant
ECCN — EAR99
Lead Free — Yes (per DigiKey product listing)

数据手册与资源

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