MT41K256M16TW-107 vs IS43TR16256AL-107MBLI 对比
详细并排对比 MT41K256M16TW-107 出自 Micron Technology 和 IS43TR16256AL-107MBLI 出自 ISSI, Integrated Silicon Solution Inc。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-107MBLI - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-107MBLI ✓ 量产中规格对比
| 参数 | MT41K256M16TW-107 | IS43TR16256AL-107MBLI |
|---|---|---|
| 品牌 | Micron Technology | ISSI, Integrated Silicon Solution Inc |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $14.10 | $2.00 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| 存储容量 | 4 Gbit | 4 Gbit |
| 存储组织 | 256M x 16 | 256M x 16 |
| 接口 | Parallel | — |
| Clock Frequency | 933 MHz (DDR3L-1866) | — |
| Access Time | 20 ns | 20 ns |
| 电源电压 | 1.35 V | 1.35V (backward compatible to 1.5V) |
| 数据总线宽度 | 16 bit | — |
| 封装 | 96-FBGA (8x14 mm) | — |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | 0C to +95C (commercial :P grade) | [DATA_NEEDED: operating temperature range] |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Die Termination | Yes | — |
| ZQ Calibration | Yes | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Compliant |
| MSL 等级 | [DATA_NEEDED: MSL level] | — |
| Clock Speed | — | 933 MHz |
| 数据速率 | — | 1866 Mbps |
| 封装 / 外壳 | — | 96-TWBGA (9x13mm) |
| Number of Banks | — | 8 |
| Burst Length | — | 8 and 4 |
| On-Die Termination | — | Yes |
| Memory Interface | — | Parallel |