MT47H32M16NF-25E:H vs MT47H64M16NF-25E 对比

详细并排对比 MT47H32M16NF-25E:H 出自 Micron Technology 和 MT47H64M16NF-25E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT47H32M16NF-25E:H MT47H32M16NF-25E:H - 512Mb DDR2 SDRAM 400MHz FBGA-84 | Micron

MT47H32M16NF-25E:H - 512Mb DDR2 SDRAM 400MHz FBGA-84 | Micron

MT47H32M16NF-25E:H ✓ 量产中
Micron Technology
MT47H64M16NF-25E MT47H64M16NF-25E - 1Gb DDR2 SDRAM 400MHz x16 | Micron

MT47H64M16NF-25E - 1Gb DDR2 SDRAM 400MHz x16 | Micron

MT47H64M16NF-25E ✓ 量产中

规格对比

参数 MT47H32M16NF-25E:H MT47H64M16NF-25E
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $7.73 $4.65
存储器类型 DDR2 SDRAM DDR2 SDRAM
Density 512 Mbit —
存储组织 32M x 16 64M x 16
Clock Frequency 400 MHz 400 MHz
Output Jitter 400 ps —
电源电压 1.8 V —
接口 Parallel —
封装 84-FBGA (8 x 12.5 mm) 84-FBGA (8 mm x 12.5 mm)
Speed Grade -25E -25E
Operating Temperature (commercial :H variant) [DATA_NEEDED: operating temperature range] —
Operating Temperature (IT variant) -40C to +95C —
On-Die Termination (ODT) Yes —
Auto Precharge Yes —
Data Mask Function Yes —
安装类型 Surface Mount Surface Mount (BGA)
RoHS 状态 Compliant (:H lead-free suffix) —
FBGA Code D9SBV —
存储容量 — 1 Gbit
Memory Interface — Parallel
数据速率 — DDR2-800 (400 ps)
Number of Banks — 8 banks
Prefetch Architecture — 4n-bit
VDD Supply Voltage — 1.8 V +/-0.1 V
VDDQ Supply Voltage — 1.8 V +/-0.1 V
I/O Interface Standard — SSTL_18-compatible (JEDEC 1.8V)
特性 — Differential DQS, RDQS duplicate output strobe, DM data mask, auto precharge, dynamic ODT
工作温度 — -40C to +95C (IT: industrial)
Part Status — Production

数据手册与资源

浏览全部产品 创建 BOM 获取报价