MT53B128M32D1DS-062 vs MT53B128M32D1DS-053 AUT:A 对比
详细并排对比 MT53B128M32D1DS-062 出自 Micron Technology 和 MT53B128M32D1DS-053 AUT:A 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT53B128M32D1DS-062 - 4Gbit LPDDR4 SDRAM 1.6GHz | Micron
MT53B128M32D1DS-062 ✓ 量产中Micron Technology
MT53B128M32D1DS-053 AUT:A - 4Gbit LPDDR4 1.866GHz | Micron
MT53B128M32D1DS-053 AUT:A ✓ 量产中规格对比
| 参数 | MT53B128M32D1DS-062 | MT53B128M32D1DS-053 AUT:A |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $5.45 | $0.00 |
| 存储器类型 | SDRAM - Mobile LPDDR4 | SDRAM - Mobile LPDDR4 |
| 存储容量 | 4 Gbit | 4 Gbit |
| 存储组织 | 128M x 32 | — |
| Clock Frequency | 1600 MHz | 1.866 GHz |
| 数据速率 | DDR-3200 (3200 MT/s class) | — |
| Core Supply Voltage (VDD) | 1.1 V | — |
| I/O Supply Voltage (VDDQ) | 1.1 V | — |
| 接口 | LPDDR4 (JEDEC low-power DDR) | Parallel |
| 封装 | 200-WFBGA (10 x 14.5 mm) | 200-WFBGA (10 mm x 14.5 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: operating temperature range for base suffix] | -40C to +125C |
| Speed Grade | -062 | -053 (1866 MHz) |
| Access Time | [DATA_NEEDED: tAA access time] | — |
| Refresh Scheme | [DATA_NEEDED: refresh scheme 1x/2x/4x] | — |
| RoHS 状态 | RoHS compliant (per JLCPCB listing) | [DATA_NEEDED: RoHS status] |
| Memory Format | Volatile DRAM | DRAM (volatile) |
| Package Case Size | 10 mm x 14.5 mm | — |
| Memory Organization | — | 128M x 32 |
| Access Time (Clock Cycle) | — | 3.5 ns |
| Supply Voltage (VDD/VDDQ) | — | 1.1 V |
| Grade | — | Automotive (AUT, AEC-Q100) |
| Feature | — | Ultra-low power consumption for enhanced battery life |
| Packaging Option | — | Tape & Reel (TR suffix variant) |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |