MT53D512M32D2DS-046 vs MT53E256M32D2DS-046 对比

详细并排对比 MT53D512M32D2DS-046 出自 Micron Technology 和 MT53E256M32D2DS-046 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT53D512M32D2DS-046 MT53D512M32D2DS-046 - 16Gb LPDDR4 2133MHz DRAM | Micron

MT53D512M32D2DS-046 - 16Gb LPDDR4 2133MHz DRAM | Micron

MT53D512M32D2DS-046 ✓ 量产中
Micron Technology
MT53E256M32D2DS-046 MT53E256M32D2DS-046 - 8Gb LPDDR4 SDRAM | Micron Technology

MT53E256M32D2DS-046 - 8Gb LPDDR4 SDRAM | Micron Technology

MT53E256M32D2DS-046 ✓ 量产中

规格对比

参数 MT53D512M32D2DS-046 MT53E256M32D2DS-046
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $61.75 $9.10
存储器类型 SDRAM - Mobile LPDDR4 LPDDR4 SDRAM (Mobile DRAM)
存储容量 16 Gbit —
存储组织 512M x 32 256M x 32
Clock Frequency 2.133 GHz 2133 MHz
电源电压 1.1 V —
封装 200-WFBGA (10 x 14.5 mm) 200-WFBGA (10 x 14.5 mm)
安装类型 Surface Mount Surface Mount
工作温度 -30C to +85C (WT grade) —
Die Configuration DDP (Dual Die Package) —
Auto Self-Refresh Yes —
Built-in Temperature Sensor Yes —
Auto Precharge Yes —
Write Leveling Yes —
ZQ Calibration Yes —
接口 LPDDR4 (JEDEC mobile SDRAM) —
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
MSL 等级 [DATA_NEEDED: moisture sensitivity level] —
Density — 8 Gbit
数据速率 — [DATA_NEEDED: data rate]
Core Supply Voltage (VDD) — 1.1 V
Interface Supply Voltage (VDDQ) — [DATA_NEEDED: VDDQ voltage]
Operating Temperature (IT grade) — [DATA_NEEDED: IT temperature range]
Speed Grade — -046
Product Generation — MT53E (LPDDR4/LPDDR4X unified die, supports 0.6V VDDQ LPDDR4X operation)
Automotive Qualification (AUT grade variant) — AEC-Q100 qualified (AUT:B variant)
Packaging (TR suffix) — Tape & Reel (TR) or Tray

数据手册与资源

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