MT53E128M32D2DS-046 vs MT53E256M32D2DS-046 对比
详细并排对比 MT53E128M32D2DS-046 出自 Micron Technology 和 MT53E256M32D2DS-046 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT53E128M32D2DS-046 - 4Gb LPDDR4 SDRAM 200-WFBGA | Micron
MT53E128M32D2DS-046 ObsoleteMicron Technology
MT53E256M32D2DS-046 - 8Gb LPDDR4 SDRAM | Micron Technology
MT53E256M32D2DS-046 ✓ 量产中规格对比
| 参数 | MT53E128M32D2DS-046 | MT53E256M32D2DS-046 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | Obsolete | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $9.10 |
| 存储器类型 | Mobile LPDDR4 SDRAM (LPDDR4/LPDDR4X unified) | LPDDR4 SDRAM (Mobile DRAM) |
| Density | 4 Gbit | 8 Gbit |
| 存储组织 | 128M x 32 | 256M x 32 |
| 数据总线宽度 | 32 bit | — |
| 数据速率 | 2.133 GHz (speed bin -046) | [DATA_NEEDED: data rate] |
| Maximum Clock Rate | 4166 MHz (per Arrow listing) | — |
| Configuration | DDP (Double-Die Package) | — |
| 封装 | 200-WFBGA (10 mm x 14.5 mm) | 200-WFBGA (10 x 14.5 mm) |
| VDDQ (LPDDR4X mode) | 0.6 V | — |
| VDDQ (LPDDR4 mode) | 1.10 V | — |
| Operating Temperature (AAT grade) | -40C to +105C | — |
| Operating Temperature (AIT grade) | -40C to +95C | — |
| 安装类型 | Surface Mount | Surface Mount |
| Packaging | Dry pack, Tape and Reel | — |
| ECCN (US) | EAR99 | — |
| HTS | 8542.32.00.28 | — |
| Automotive Qualification | Yes (per Arrow listing for AAT:A) | — |
| RoHS 状态 | EU RoHS Compliant | [DATA_NEEDED: RoHS status] |
| Part Status | Obsolete (per Arrow listing) | — |
| Clock Frequency | — | 2133 MHz |
| Core Supply Voltage (VDD) | — | 1.1 V |
| Interface Supply Voltage (VDDQ) | — | [DATA_NEEDED: VDDQ voltage] |
| Operating Temperature (IT grade) | — | [DATA_NEEDED: IT temperature range] |
| Speed Grade | — | -046 |
| Product Generation | — | MT53E (LPDDR4/LPDDR4X unified die, supports 0.6V VDDQ LPDDR4X operation) |
| Automotive Qualification (AUT grade variant) | — | AEC-Q100 qualified (AUT:B variant) |
| Packaging (TR suffix) | — | Tape & Reel (TR) or Tray |