MT53E1G32D2FW-046 AUT:B vs MT53E1G32D2FW-046 对比

详细并排对比 MT53E1G32D2FW-046 AUT:B 出自 Micron Technology 和 MT53E1G32D2FW-046 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT53E1G32D2FW-046 AUT:B MT53E1G32D2FW-046 AUT:B - 32Gbit LPDDR4X DRAM | Micron

MT53E1G32D2FW-046 AUT:B - 32Gbit LPDDR4X DRAM | Micron

MT53E1G32D2FW-046 AUT:B ✓ 量产中
Micron Technology
MT53E1G32D2FW-046 MT53E1G32D2FW-046 - 32Gbit LPDDR4X SDRAM 200-TFBGA | Micron

MT53E1G32D2FW-046 - 32Gbit LPDDR4X SDRAM 200-TFBGA | Micron

MT53E1G32D2FW-046 ✓ 量产中

规格对比

参数 MT53E1G32D2FW-046 AUT:B MT53E1G32D2FW-046
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $273.51 $295.93
存储器类型 SDRAM - Mobile LPDDR4X Mobile LPDDR4X SDRAM
存储容量 32 Gbit (4 GB) 32 Gbit (4 GB)
存储组织 x32 Parallel 1G x 32 (dual-die, 2 x 16-bit channels)
Clock Frequency 2.133 GHz 2133 MHz (2.133 GHz)
Access Time / Clock Cycle 3.5 ns —
接口 Parallel Parallel
封装 200-TFBGA (10 mm x 14.5 mm) 200-TFBGA (10 x 14.5 mm)
工作温度 -40C to +125C —
Temperature Grade Automotive (AUT) —
Self-Refresh Auto self-refresh —
Built-in Temperature Sensor Yes —
Auto Precharge Yes —
Write Leveling Yes —
ZQ Calibration Yes —
安装类型 Surface Mount Surface Mount
VDDQ Supply Voltage [DATA_NEEDED: VDDQ supply voltage] —
VDD Supply Voltage [DATA_NEEDED: VDD supply voltage] —
MSL 等级 [DATA_NEEDED: moisture sensitivity level] —
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
AEC-Q100 Qualification [DATA_NEEDED: AEC-Q100 qualification] —
数据速率 — 4266 Mb/s per pin
Access Time — 3.5 ns
Write Cycle Time — 18 ns
VDDQ I/O Voltage — 0.6 V
Ball Diameter — 0.40 mm (SMD balls)
Operating Temperature (AUT variant) — -40C to +125C
Die Revisions — :A (FBGA D9ZQX) and :B (FBGA D8CJB)
特性 — Auto self-refresh, built-in temperature sensor, auto precharge, write leveling, ZQ calibration
MSL Rating — [DATA_NEEDED: moisture sensitivity level]

数据手册与资源

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