MT53E256M32D2DS-046 vs MT53D512M32D2DS-046 对比
详细并排对比 MT53E256M32D2DS-046 出自 Micron Technology 和 MT53D512M32D2DS-046 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT53E256M32D2DS-046 - 8Gb LPDDR4 SDRAM | Micron Technology
MT53E256M32D2DS-046 ✓ 量产中规格对比
| 参数 | MT53E256M32D2DS-046 | MT53D512M32D2DS-046 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $9.10 | $61.75 |
| 存储器类型 | LPDDR4 SDRAM (Mobile DRAM) | SDRAM - Mobile LPDDR4 |
| Density | 8 Gbit | — |
| 存储组织 | 256M x 32 | 512M x 32 |
| Clock Frequency | 2133 MHz | 2.133 GHz |
| 数据速率 | [DATA_NEEDED: data rate] | — |
| Core Supply Voltage (VDD) | 1.1 V | — |
| Interface Supply Voltage (VDDQ) | [DATA_NEEDED: VDDQ voltage] | — |
| 封装 | 200-WFBGA (10 x 14.5 mm) | 200-WFBGA (10 x 14.5 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Operating Temperature (IT grade) | [DATA_NEEDED: IT temperature range] | — |
| Speed Grade | -046 | — |
| Product Generation | MT53E (LPDDR4/LPDDR4X unified die, supports 0.6V VDDQ LPDDR4X operation) | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Automotive Qualification (AUT grade variant) | AEC-Q100 qualified (AUT:B variant) | — |
| Packaging (TR suffix) | Tape & Reel (TR) or Tray | — |
| 存储容量 | — | 16 Gbit |
| 电源电压 | — | 1.1 V |
| 工作温度 | — | -30C to +85C (WT grade) |
| Die Configuration | — | DDP (Dual Die Package) |
| Auto Self-Refresh | — | Yes |
| Built-in Temperature Sensor | — | Yes |
| Auto Precharge | — | Yes |
| Write Leveling | — | Yes |
| ZQ Calibration | — | Yes |
| 接口 | — | LPDDR4 (JEDEC mobile SDRAM) |
| MSL 等级 | — | [DATA_NEEDED: moisture sensitivity level] |