MT53E256M32D2DS-046 vs MT53E256M32D2DS-053 WT:B 对比

详细并排对比 MT53E256M32D2DS-046 出自 Micron Technology 和 MT53E256M32D2DS-053 WT:B 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT53E256M32D2DS-046 MT53E256M32D2DS-046 - 8Gb LPDDR4 SDRAM | Micron Technology

MT53E256M32D2DS-046 - 8Gb LPDDR4 SDRAM | Micron Technology

MT53E256M32D2DS-046 ✓ 量产中
Micron Technology
MT53E256M32D2DS-053 WT:B MT53E256M32D2DS-053 - 8Gb LPDDR4 DRAM 1.866GHz | Micron

MT53E256M32D2DS-053 - 8Gb LPDDR4 DRAM 1.866GHz | Micron

MT53E256M32D2DS-053 WT:B ✓ 量产中

规格对比

参数 MT53E256M32D2DS-046 MT53E256M32D2DS-053 WT:B
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $9.10 $21.90
存储器类型 LPDDR4 SDRAM (Mobile DRAM) LPDDR4 SDRAM (Mobile DRAM)
Density 8 Gbit 8 Gbit (256M x 32)
存储组织 256M x 32 256M x 32
Clock Frequency 2133 MHz —
数据速率 [DATA_NEEDED: data rate] 1866 Mbps/pin (1.866 GHz)
Core Supply Voltage (VDD) 1.1 V —
Interface Supply Voltage (VDDQ) [DATA_NEEDED: VDDQ voltage] —
封装 200-WFBGA (10 x 14.5 mm) 200-ball WFBGA, 10 x 14.5 mm
安装类型 Surface Mount Surface Mount (BGA)
Operating Temperature (IT grade) [DATA_NEEDED: IT temperature range] —
Speed Grade -046 —
Product Generation MT53E (LPDDR4/LPDDR4X unified die, supports 0.6V VDDQ LPDDR4X operation) —
RoHS 状态 [DATA_NEEDED: RoHS status] Compliant (per JLCPCB/LCSC listing)
Automotive Qualification (AUT grade variant) AEC-Q100 qualified (AUT:B variant) —
Packaging (TR suffix) Tape & Reel (TR) or Tray —
Supply Voltage (VDD2/VDDQ) — 1.1 V
Operating Temperature (WT grade) — -30C to +85C
Self-Refresh — Auto self-refresh with built-in temperature sensor
特性 — Auto precharge, write leveling, ZQ calibration
Bus Width — 32-bit
Peak Bandwidth (per device) — approximately 7.46 GB/s (32-bit x 1866 Mbps)
MSL 等级 — [DATA_NEEDED: MSL level]
Access Time / CAS Latency — [DATA_NEEDED: CL at 1866 Mbps]
Refresh Interval — [DATA_NEEDED: tREFI specification]
Package Height — [DATA_NEEDED: max package height]

数据手册与资源

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