MT53E384M32D2DS-046 vs MT53E256M32D2DS-046 对比
详细并排对比 MT53E384M32D2DS-046 出自 Micron Technology 和 MT53E256M32D2DS-046 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT53E384M32D2DS-046 - 12Gb LPDDR4 SDRAM 2.133GHz | Micron
MT53E384M32D2DS-046 ✓ 量产中Micron Technology
MT53E256M32D2DS-046 - 8Gb LPDDR4 SDRAM | Micron Technology
MT53E256M32D2DS-046 ✓ 量产中规格对比
| 参数 | MT53E384M32D2DS-046 | MT53E256M32D2DS-046 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $13.40 | $9.10 |
| 存储器类型 | LPDDR4 SDRAM (Mobile DRAM) | LPDDR4 SDRAM (Mobile DRAM) |
| Memory Organization | 384M x 32 | — |
| Density | 12 Gbit | 8 Gbit |
| Clock Frequency | 2.133 GHz | 2133 MHz |
| Speed Grade | -046 (4266 MT/s class) | -046 |
| 电源电压 | 1.1 V | — |
| 封装 | 200-WFBGA (10 x 14.5 mm) | 200-WFBGA (10 x 14.5 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Die Configuration | DDP (Double Die Package) | — |
| Qualification | AEC-Q100, automotive grade (AUT suffix) | — |
| Die Revision | :E | — |
| Access Type | Parallel | — |
| Memory Category | Volatile DRAM | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | — |
| 数据速率 | [DATA_NEEDED: exact MT/s data rate] | [DATA_NEEDED: data rate] |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| 存储组织 | — | 256M x 32 |
| Core Supply Voltage (VDD) | — | 1.1 V |
| Interface Supply Voltage (VDDQ) | — | [DATA_NEEDED: VDDQ voltage] |
| Operating Temperature (IT grade) | — | [DATA_NEEDED: IT temperature range] |
| Product Generation | — | MT53E (LPDDR4/LPDDR4X unified die, supports 0.6V VDDQ LPDDR4X operation) |
| Automotive Qualification (AUT grade variant) | — | AEC-Q100 qualified (AUT:B variant) |
| Packaging (TR suffix) | — | Tape & Reel (TR) or Tray |