MT53E384M32D2DS-053 WT:E vs MT53E384M32D2DS-046 对比
详细并排对比 MT53E384M32D2DS-053 WT:E 出自 Micron Technology 和 MT53E384M32D2DS-046 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
MT53E384M32D2DS-053 WT:E - 12Gbit LPDDR4 SDRAM | Micron
MT53E384M32D2DS-053 WT:E ✓ 量产中Micron Technology
MT53E384M32D2DS-046 - 12Gb LPDDR4 SDRAM 2.133GHz | Micron
MT53E384M32D2DS-046 ✓ 量产中规格对比
| 参数 | MT53E384M32D2DS-053 WT:E | MT53E384M32D2DS-046 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $11.30 | $13.40 |
| 存储器类型 | Mobile LPDDR4 SDRAM | LPDDR4 SDRAM (Mobile DRAM) |
| 存储容量 | 12 Gbit | — |
| 存储组织 | 384M x 32 | — |
| 数据速率 | 1866 Mbps (1.866 GHz) | [DATA_NEEDED: exact MT/s data rate] |
| Speed Grade | -053 | -046 (4266 MT/s class) |
| Die Architecture | DDP (Double Die Package) | — |
| 封装 | 200-WFBGA (10 x 14.5 mm) | 200-WFBGA (10 x 14.5 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -25C to +85C | [DATA_NEEDED: operating temperature range] |
| Supply Voltage Class | 1.1V (VDD2/VDDQ), LPDDR4 low-voltage I/O | — |
| 接口 | LPDDR4 (JEDEC mobile DRAM interface) | — |
| Temperature Grade Suffix | WT (commercial/industrial), E (lead-free RoHS package code) | — |
| Memory IC Category | SDRAM - Mobile LPDDR4 | — |
| RoHS 状态 | Compliant (E package suffix) | [DATA_NEEDED: RoHS status] |
| Core Supply Voltage | [DATA_NEEDED: VDD1 core voltage exact value] | — |
| Refresh Rate | [DATA_NEEDED: refresh interval 32ms/64ms confirmation] | — |
| Standard Package Quantity | [DATA_NEEDED: tape and reel quantity] | — |
| Memory Organization | — | 384M x 32 |
| Density | — | 12 Gbit |
| Clock Frequency | — | 2.133 GHz |
| 电源电压 | — | 1.1 V |
| Die Configuration | — | DDP (Double Die Package) |
| Qualification | — | AEC-Q100, automotive grade (AUT suffix) |
| Die Revision | — | :E |
| Access Type | — | Parallel |
| Memory Category | — | Volatile DRAM |