MX30LF4G18AC-TI-T vs MT29F4G08ABADAWP-IT:D 对比

详细并排对比 MX30LF4G18AC-TI-T 出自 Macronix 和 MT29F4G08ABADAWP-IT:D 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Macronix
MX30LF4G18AC-TI-T MX30LF4G18AC-TI-T - 4Gbit SLC NAND Flash, 3V, TSOP-48 | Macronix

MX30LF4G18AC-TI-T - 4Gbit SLC NAND Flash, 3V, TSOP-48 | Macronix

MX30LF4G18AC-TI-T ✓ 量产中
Micron Technology
MT29F4G08ABADAWP-IT:D MT29F4G08ABADAWP-IT:D - 4Gbit SLC NAND Flash Parallel x8 | Micron

MT29F4G08ABADAWP-IT:D - 4Gbit SLC NAND Flash Parallel x8 | Micron

MT29F4G08ABADAWP-IT:D ✓ 量产中

规格对比

参数 MX30LF4G18AC-TI-T MT29F4G08ABADAWP-IT:D
品牌 Macronix Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.05 $5.45
存储器类型 Non-volatile NAND Flash (SLC) FLASH - NAND (SLC)
Density 4 Gbit (512 Mbyte) —
存储组织 512M x 8 bit —
Supply Voltage (VCC) 2.7 V to 3.6 V 2.7 V to 3.6 V
接口 Parallel (asynchronous), ONFI 1.0 compliant Parallel (byte-wide, x8)
数据总线宽度 8 bit —
Access Time (tRC) 20 ns (typical) 25 ns
Page Size 2048 byte + 64 byte spare area 2048 + 64 bytes (or 4096 + 128 bytes in ONFI 2.1)
Block Size 64 pages (128 KB + 4 KB spare) 64 pages x 4 KB
Required ECC 4-bit ECC per 528-byte sector —
Program Time (typical) 300 us per page —
Erase Time (typical) 2 ms per block —
Data Retention 10 years —
Endurance (P/E Cycles) [DATA_NEEDED: endurance cycles] 100,000 typical (SLC)
工作温度 -40 C to +85 C (industrial) -40 C to +85 C (Industrial)
封装 48-pin TSOP-I (12 mm x 20 mm) —
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant
存储容量 — 4 Gbit (512M x 8)
Memory Organization — 512M x 8
ONFI Version — ONFI 2.1
封装 / 外壳 — 48-TFSOP (0.724", 18.40 mm width)
Planes per Die — 2
Packaging — Tray

数据手册与资源

浏览全部产品 创建 BOM 获取报价