PDRQLAKCDF12-00 vs K4RAH165VB-BCQK 对比
详细并排对比 PDRQLAKCDF12-00 出自 Samsung Electronics 和 K4RAH165VB-BCQK 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
PDRQLAKCDF12-00 - 16Gb DDR5-7200 SDRAM | Samsung Electronics
PDRQLAKCDF12-00 ✓ 量产中
规格对比
| 参数 | PDRQLAKCDF12-00 | K4RAH165VB-BCQK |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $13.60 | $0.00 |
| 存储器类型 | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gbit | — |
| 存储组织 | 1G x 16 | — |
| 数据速率 | 7200 Mbps per pin | 4800 Mbps |
| Speed Bin | DDR5-7200 | — |
| Operating Voltage | 1.1 V | — |
| 封装 | 102-ball FBGA | 106-ball FBGA |
| 安装类型 | Surface Mount | Surface Mount |
| Generation | DDR5 (improved from 6400 Mbps generation) | — |
| 接口 | JEDEC DDR5 | — |
| Package Height | [DATA_NEEDED: package height] | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| tCK / Cycle Time | [DATA_NEEDED: clock cycle time] | — |
| CAS 延迟 | [DATA_NEEDED: CAS latency] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | — |
| 存储容量 | — | 16 Gb |
| Memory Organization | — | 1G x 16 |
| Memory Interface | — | Parallel |
| Supply Voltage (VDD) | — | 1.1 V |
| Error Correction | — | On-die ECC |
| 特性 | — | Auto self-refresh, asynchronous reset, on-chip ECC, write leveling, CRC, ZQ calibration |
| Memory Format | — | DRAM (volatile) |
| Packaging | — | Tray |
| 生命周期状态 | — | Active |
| Unit Price | — | [DATA_NEEDED: unit price] |