RTAX2000S-1CQ352V vs RTAX2000S-1CQ352PROTO 对比
详细并排对比 RTAX2000S-1CQ352V 出自 Microchip Technology 和 RTAX2000S-1CQ352PROTO 出自 Microchip Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Microchip Technology
RTAX2000S-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000S-1CQ352V ✓ 量产中Microchip Technology
RTAX2000S-1CQ352PROTO - Rad-Tolerant FPGA 2M Gates | Microchip
RTAX2000S-1CQ352PROTO ✓ 量产中规格对比
| 参数 | RTAX2000S-1CQ352V | RTAX2000S-1CQ352PROTO |
|---|---|---|
| 品牌 | Microchip Technology | Microchip Technology |
| 分类 | FPGA & CPLD | FPGA & CPLD |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $0.00 |
| Equivalent System Gates | 2,000,000 gates | 2000000 |
| Logic Cells | 32,256 cells | — |
| Configurable Logic Blocks (CLBs) | 21,504 CLBs | 21504 |
| Process Technology | Digital CMOS | CMOS |
| Speed Grade | -1 | -1 |
| Family | RTAX-S/SL Radiation-Tolerant FPGAs | RTAX-S Radiation-Tolerant FPGA |
| 封装 | CQ352 ceramic QFP, 352 pins | CQFP352 (ceramic quad flat pack, 352 leads) |
| 安装类型 | Surface Mount | Surface Mount |
| Configuration | Live at power-up, single-chip | Live at power-up, single chip |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | — |
| Core Voltage | [DATA_NEEDED: core voltage] | — |
| I/O Voltage | [DATA_NEEDED: I/O voltage] | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Radiation Tolerance (TID) | [DATA_NEEDED: TID rating] | — |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Series | — | RTAX2000S |
| Programmability Type | — | Antifuse (one-time programmable) |
| Device Designation | — | PROTO (prototyping / engineering) |
| Temperature Grade | — | C (commercial) |
| Radiation Tolerance | — | Radiation-tolerant (space-flight qualified family) |
| 电源电压 | — | [DATA_NEEDED: core supply voltage] |
| Maximum I/O Count | — | [DATA_NEEDED: user I/O count for CQ352 package] |
| Embedded SRAM | — | [DATA_NEEDED: embedded SRAM block capacity] |