RTAX2000S-CG624PROTO vs RTAX2000S-1CG624PROTO 对比

详细并排对比 RTAX2000S-CG624PROTO 出自 Microchip Technology 和 RTAX2000S-1CG624PROTO 出自 Microchip Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Microchip Technology
RTAX2000S-CG624PROTO RTAX2000S-CG624PROTO - 2M-Gate Rad-Tolerant FPGA CCGA-624 | Microchip

RTAX2000S-CG624PROTO - 2M-Gate Rad-Tolerant FPGA CCGA-624 | Microchip

RTAX2000S-CG624PROTO ✓ 量产中
Microchip Technology
RTAX2000S-1CG624PROTO RTAX2000S-1CG624PROTO - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000S-1CG624PROTO - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000S-1CG624PROTO ✓ 量产中

规格对比

参数 RTAX2000S-CG624PROTO RTAX2000S-1CG624PROTO
品牌 Microchip Technology Microchip Technology
分类 FPGA & CPLD FPGA & CPLD
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $0.00
Family RTAX-S Radiation-Tolerant FPGA RTAX-S/SL Radiation-Tolerant FPGA
System Gates 2,000,000 —
Logic Cells (R-cells) 21,504 —
D-Flip-Flops (Registers) 32,256 —
Logic Architecture CMOS antifuse (OTP), SEU-hardened —
封装 CCGA-624 (ceramic column grid array, 624 balls) CCGA-624 (CG624 ceramic column grid array)
安装类型 Surface Mount Surface Mount
工作温度 -55C to +125C [DATA_NEEDED: operating temperature range]
Logic Family CMOS —
Configuration Live at power-up (non-volatile antifuse) Live at power-up (nonvolatile antifuse)
SEU Immunity SEU rate < 10^-10 errors/bit-day (per family datasheet) —
Prototyping Variant Yes (PROTO suffix) —
Embedded Memory Embedded SRAM blocks (FIFO / dual-port capable) 540 kbits (family max, with optional EDAC)
I/O Standards Single-ended and differential (P/N pin pairs) —
Design Software Microsemi/Microchip Libero SoC —
电源电压 [DATA_NEEDED: core and I/O supply voltage] —
Total Ionizing Dose (TID) [DATA_NEEDED: TID rating in krad(Si)] —
RoHS 状态 [DATA_NEEDED: RoHS compliance] [DATA_NEEDED: RoHS status]
Maximum I/O Count (624-ball pkg) [DATA_NEEDED: user I/O count] —
Moisture Sensitivity Level [DATA_NEEDED: MSL level] —
Equivalent System Gates — 2000000
Logic Cells — 32256
Configurable Logic Blocks (CLBs) — 21504
User I/Os (family max) — 684
Total Ionizing Dose (functional) — 300 krad (Si)
Total Ionizing Dose (parametric) — 200 krad (Si)
SEU Rate — Less than 1E-10 errors per bit-day
Maximum System Frequency — 350 MHz (family performance)
Technology — CMOS antifuse (one-time programmable)
Speed Grade — -1
Qualification Flow — PROTO (engineering prototype)

数据手册与资源

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