SPW47N60C3 vs IPW60R041C6FKSA1 对比

详细并排对比 SPW47N60C3 出自 Infineon 和 IPW60R041C6FKSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 SPW47N60C3 IPW60R041C6FKSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 不推荐新设计
库存状态 有库存 有库存
单价(USD) $6.10 $5.40
Part Number SPW47N60C3 —
Manufacturer Infineon Technologies AG —
Technology CoolMOS C3 (superjunction) CoolMOS™ C6 (Superjunction N-channel)
晶体管类型 N-Channel MOSFET —
Drain-Source Voltage (V(BR)DSS) 650 V —
Continuous Drain Current (ID) at Tc 47 A —
Power Dissipation (PD) at Tc 415 W —
RDS(on) (typical) 70 mOhm [DATA_NEEDED: VGS test condition] —
Gate Charge (Qg, typical) [DATA_NEEDED: nanocoulombs] —
Output Capacitance Eoss @ 400V Very low (per C3 series datasheet) —
封装 TO-247-3-1 (PG-TO247-3-1) through-hole PG-TO247-3-1 (TO-247-3)
安装类型 Through Hole Through Hole
工作温度范围 -55C to +150C (junction, typical for CoolMOS C3) -55°C to +150°C
Configuration Single N-channel, 3 pins (G, D, S) —
RoHS 状态 Compliant Compliant
Lead-Free Yes Yes
MSL 等级 N/A (through-hole) Not Applicable (Through-hole)
Series CoolMOS C3 (600V generation) —
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, Tc=25°C) — 77.5 A
Power Dissipation (PD, Tc=25°C) — 481 W
On-State Resistance (RDS(on)) — 41 mΩ at VGS=10V
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — 2.5 V to 3.5 V typical
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Rise Time (tr) — [DATA_NEEDED: tr value]
Fall Time (tf) — [DATA_NEEDED: tf value]

数据手册与资源

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