TJ30S06M3L(T6L1 vs IRF4905PBF 对比
详细并排对比 TJ30S06M3L(T6L1 出自 Toshiba 和 IRF4905PBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | TJ30S06M3L(T6L1 | IRF4905PBF |
|---|---|---|
| 品牌 | Toshiba | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.54 | $0.95 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDSS) | -60 V | — |
| Gate-Source Voltage (VGSS) | +10 V / -20 V | — |
| Continuous Drain Current (ID) @ Tc=25°C | -30 A | — |
| Power Dissipation (PD) @ Tc=25°C | 68 W | — |
| RDS(ON) Max @ VGS=-10 V | 21.8 mΩ | — |
| RDS(ON) Typ @ VGS=-10 V | 16.8 mΩ | — |
| Gate Threshold Voltage (Vth) | -3.0 V (typ) @ VDS=-1 mA | — |
| Drain Leakage (IDSS) Max | -10 µA @ VDS=-60 V | — |
| Input Capacitance (Ciss) | 3950 pF | — |
| 工作温度范围 | -55°C to +175°C (Tj) | -55 °C to +175 °C (junction) |
| 封装 | DPAK+ (TO-252-3) | TO-220AB (through-hole) |
| 安装类型 | Surface Mount | Through Hole |
| Automotive Qualification | AEC-Q101 | — |
| Technology | U-MOS (Silicon P-Channel MOS) | HEXFET (IR MOSFET) |
| FET Type | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at TC | — | -74 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TC | — | 200 W |
| On-Resistance RDS(on) max at VGS=-10V | — | 20 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/range] |
| Total Gate Charge (Qg) | — | 120 nC |
| Pin Configuration | — | Gate - Drain - Source (left to right) |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free, RoHS compliant) |
| MSL 等级 | — | 1 (not moisture-sensitive for TO-220) |