UCC21521DWR vs UCC21530Q-Q1 对比

详细并排对比 UCC21521DWR 出自 Texas Instruments 和 UCC21530Q-Q1 出自 Texas Instruments。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Texas Instruments
UCC21521DWR UCC21521 - 4A/6A 5.7kVrms Isolated Gate Driver | TI

UCC21521 - 4A/6A 5.7kVrms Isolated Gate Driver | TI

UCC21521DWR ✓ 量产中
Texas Instruments
UCC21530Q-Q1 UCC21530Q-Q1 - 4A/6A 5.7kVRMS Isolated Gate Driver | TI

UCC21530Q-Q1 - 4A/6A 5.7kVRMS Isolated Gate Driver | TI

UCC21530Q-Q1 ✓ 量产中

规格对比

参数 UCC21521DWR UCC21530Q-Q1
品牌 Texas Instruments Texas Instruments
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.15 $2.10
Channel Count 2 —
Peak Source Current 4 A —
Peak Sink Current 6 A —
Isolation Rating 5700 Vrms 5.7 kVRMS (reinforced)
CMTI 100 V/ns (minimum) —
Propagation Delay 19 ns (typical) —
Delay Matching 5 ns (maximum) —
Pulse-Width Distortion 6 ns (maximum) —
Minimum Pulse Width 10 ns —
Max Switching Frequency 5 MHz —
Isolation Technology Capacitive coupling —
Input Threshold TTL and CMOS compatible (3.3 V logic) TTL and CMOS compatible
Enable / Disable Pin Yes (DIS) —
工作温度 -40C to +125C [DATA_NEEDED: temperature range]
封装 SOIC-16 (DW) SOIC-14 (DWK)
安装类型 Surface Mount Surface Mount
Configurations Dual low-side, dual high-side, or half-bridge —
RoHS 状态 Compliant Compliant
Output Peak Current (Source) — 4 A
Output Peak Current (Sink) — 6 A
Channel-to-Channel Spacing — 3.3 mm
CMTI (Common-Mode Transient Immunity) — 125 V/ns (minimum)
Maximum Switching Frequency — 5 MHz
Number of Channels — 2
Configuration — Low-side, high-side, half-bridge, dual low-side
Dead Time — Programmable via DT pin resistor
使能引脚 — Yes
Driven Device Types — IGBT, Si MOSFET, SiC MOSFET
Qualification — AEC-Q100 (automotive)
Supply Voltage VDDI — [DATA_NEEDED: VDDI range]

数据手册与资源

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