UCC21521DWR vs UCC21530Q-Q1 비교

다음의 상세 나란히 비교: UCC21521DWR 제조: Texas Instruments 및 UCC21530Q-Q1 제조: Texas Instruments. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Texas Instruments
UCC21521DWR UCC21521 - 4A/6A 5.7kVrms Isolated Gate Driver | TI

UCC21521 - 4A/6A 5.7kVrms Isolated Gate Driver | TI

UCC21521DWR ✓ 활성
Texas Instruments
UCC21530Q-Q1 UCC21530Q-Q1 - 4A/6A 5.7kVRMS Isolated Gate Driver | TI

UCC21530Q-Q1 - 4A/6A 5.7kVRMS Isolated Gate Driver | TI

UCC21530Q-Q1 ✓ 활성

사양 비교

파라미터 UCC21521DWR UCC21530Q-Q1
브랜드 Texas Instruments Texas Instruments
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $2.15 $2.10
Channel Count 2 —
Peak Source Current 4 A —
Peak Sink Current 6 A —
Isolation Rating 5700 Vrms 5.7 kVRMS (reinforced)
CMTI 100 V/ns (minimum) —
Propagation Delay 19 ns (typical) —
Delay Matching 5 ns (maximum) —
Pulse-Width Distortion 6 ns (maximum) —
Minimum Pulse Width 10 ns —
Max Switching Frequency 5 MHz —
Isolation Technology Capacitive coupling —
Input Threshold TTL and CMOS compatible (3.3 V logic) TTL and CMOS compatible
Enable / Disable Pin Yes (DIS) —
동작 온도 -40C to +125C [DATA_NEEDED: temperature range]
패키지 SOIC-16 (DW) SOIC-14 (DWK)
실장 유형 Surface Mount Surface Mount
Configurations Dual low-side, dual high-side, or half-bridge —
RoHS 상태 Compliant Compliant
Output Peak Current (Source) — 4 A
Output Peak Current (Sink) — 6 A
Channel-to-Channel Spacing — 3.3 mm
CMTI (Common-Mode Transient Immunity) — 125 V/ns (minimum)
Maximum Switching Frequency — 5 MHz
Number of Channels — 2
Configuration — Low-side, high-side, half-bridge, dual low-side
Dead Time — Programmable via DT pin resistor
인에이블 핀 — Yes
Driven Device Types — IGBT, Si MOSFET, SiC MOSFET
Qualification — AEC-Q100 (automotive)
Supply Voltage VDDI — [DATA_NEEDED: VDDI range]

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