UCC27322DGN+UCC27322DGNR vs UCC27322DGNR 对比

详细并排对比 UCC27322DGN+UCC27322DGNR 出自 Texas Instruments 和 UCC27322DGNR 出自 Texas Instruments。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Texas Instruments
UCC27322DGN+UCC27322DGNR UCC27322DGN/DGNR - 9A Single LS MOSFET Driver w/ Enable | TI

UCC27322DGN/DGNR - 9A Single LS MOSFET Driver w/ Enable | TI

UCC27322DGN+UCC27322DGNR ✓ 量产中
Texas Instruments
UCC27322DGNR UCC27322DGNR - 9A Single Low-Side MOSFET Driver | Texas Instruments

UCC27322DGNR - 9A Single Low-Side MOSFET Driver | Texas Instruments

UCC27322DGNR ✓ 量产中

规格对比

参数 UCC27322DGN+UCC27322DGNR UCC27322DGNR
品牌 Texas Instruments Texas Instruments
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.31 $0.92
Driver Type Single-channel low-side MOSFET/IGBT gate driver —
Number of Channels 1 1
Peak Output Current 9 A source / 9 A sink —
输出配置 Split outputs (OUTH/OUTL) for independent turn-on/turn-off Split outputs (OUTH source, OUTL sink)
Input Voltage (VCC) 4 V to 15 V —
UVLO Threshold 4 V (typ) —
Input Thresholds TTL/CMOS compatible —
使能引脚 Yes (active-high) Yes (active-high)
Output Polarity Non-inverting —
上升时间 20 ns (typ, 1.8 nF load) —
下降时间 20 ns (typ, 1.8 nF load) —
Propagation Delay [DATA_NEEDED: propagation delay] —
工作温度 -40 C to +105 C (DGN); -40 C to +125 C (Q1 variant) -40 C to +105 C
封装 8-pin HVSSOP PowerPAD (DGN) 3.0 mm x 3.0 mm with exposed thermal pad HVSSOP-8 (DGN) PowerPAD
安装类型 Surface Mount Surface Mount
Output Architecture TrueDrive bipolar/CMOS hybrid —
RoHS 状态 Compliant Compliant
功能 — Single low-side gate driver
Peak Source Current — 9 A
Peak Sink Current — 9 A
Supply Voltage (VDD) — 4 V to 15 V
Logic Input Type — Non-Inverting (TTL/CMOS)
VIL / VIH Thresholds — 1.1 V / 2.7 V
Rise Time (typical, 1.8 nF load) — 20 ns
Fall Time (typical, 1.8 nF load) — 20 ns
Propagation Delay (typ) — [DATA_NEEDED: propagation delay]

数据手册与资源

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