UCC5390ECDR vs UCC5390ECD 对比
详细并排对比 UCC5390ECDR 出自 Texas Instruments 和 UCC5390ECD 出自 Texas Instruments。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | UCC5390ECDR | UCC5390ECD |
|---|---|---|
| 品牌 | Texas Instruments | Texas Instruments |
| 分类 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.81 | $1.12 |
| 功能 | Single-channel isolated gate driver | — |
| Isolation Technology | Capacitive coupling | Capacitive (basic isolation) |
| Isolation Voltage (RMS) | 3 kVrms (UL 1577 basic isolation) | — |
| Number of Channels | 1 | 1 |
| Peak Source Current | 10 A | — |
| Peak Sink Current | 10 A | — |
| Output Structure | Split output (OUTH / OUTL) | — |
| UVLO Threshold | 12 V (GND-referenced) | — |
| Supply Voltage (VCC) | 3 V to 15 V (input side) | — |
| Output Supply (VDD - VEE) | Up to +18 V / -13 V (bipolar) | — |
| Common-Mode Transient Immunity (CMTI) | >= 100 kV/us minimum | >=100 kV/us (minimum) |
| Propagation Delay (typical) | [DATA_NEEDED: propagation delay ns] | — |
| 封装 | 8-pin SOIC (D) | SOIC-8 (D) |
| 工作温度范围 | -40 C to +125 C | -40C to +125C |
| RoHS 状态 | Compliant | Compliant |
| Safety Certifications | UL 1577, VDE 0884-11 (basic isolation) | — |
| Compatible Power Devices | MOSFET, IGBT, SiC MOSFET | — |
| Isolation Voltage Rating | — | 3 kVrms (basic) |
| Output Peak Source Current | — | 10 A |
| Output Peak Sink Current | — | 10 A |
| UVLO Threshold (VCC2) | — | 12 V |
| Propagation Delay | — | [DATA_NEEDED: propagation delay ns] |
| Input Logic | — | TTL/CMOS compatible |
| Output Supply Voltage (VCC2) | — | [DATA_NEEDED: VCC2 min/max V] |
| Input Supply Voltage (VCC1) | — | [DATA_NEEDED: VCC1 min/max V] |
| 输出配置 | — | Single output, split OUTH/OUTL not present in -E variant |
| Approximate Body Size | — | 3.91 mm x 4.90 mm (SOIC-8 D) |
| MSL 等级 | — | [DATA_NEEDED: MSL level] |
| AEC-Q100 Qualified | — | No (industrial grade) |