UCC5390ECDR vs UCC5390ECD 비교
다음의 상세 나란히 비교: UCC5390ECDR 제조: Texas Instruments 및 UCC5390ECD 제조: Texas Instruments. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | UCC5390ECDR | UCC5390ECD |
|---|---|---|
| 브랜드 | Texas Instruments | Texas Instruments |
| 카테고리 | Power MOSFET Drivers | Power MOSFET Drivers |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.81 | $1.12 |
| 기능 | Single-channel isolated gate driver | — |
| Isolation Technology | Capacitive coupling | Capacitive (basic isolation) |
| Isolation Voltage (RMS) | 3 kVrms (UL 1577 basic isolation) | — |
| Number of Channels | 1 | 1 |
| Peak Source Current | 10 A | — |
| Peak Sink Current | 10 A | — |
| Output Structure | Split output (OUTH / OUTL) | — |
| UVLO Threshold | 12 V (GND-referenced) | — |
| Supply Voltage (VCC) | 3 V to 15 V (input side) | — |
| Output Supply (VDD - VEE) | Up to +18 V / -13 V (bipolar) | — |
| Common-Mode Transient Immunity (CMTI) | >= 100 kV/us minimum | >=100 kV/us (minimum) |
| Propagation Delay (typical) | [DATA_NEEDED: propagation delay ns] | — |
| 패키지 | 8-pin SOIC (D) | SOIC-8 (D) |
| 동작 온도 범위 | -40 C to +125 C | -40C to +125C |
| RoHS 상태 | Compliant | Compliant |
| Safety Certifications | UL 1577, VDE 0884-11 (basic isolation) | — |
| Compatible Power Devices | MOSFET, IGBT, SiC MOSFET | — |
| Isolation Voltage Rating | — | 3 kVrms (basic) |
| Output Peak Source Current | — | 10 A |
| Output Peak Sink Current | — | 10 A |
| UVLO Threshold (VCC2) | — | 12 V |
| Propagation Delay | — | [DATA_NEEDED: propagation delay ns] |
| Input Logic | — | TTL/CMOS compatible |
| Output Supply Voltage (VCC2) | — | [DATA_NEEDED: VCC2 min/max V] |
| Input Supply Voltage (VCC1) | — | [DATA_NEEDED: VCC1 min/max V] |
| 출력 구성 | — | Single output, split OUTH/OUTL not present in -E variant |
| Approximate Body Size | — | 3.91 mm x 4.90 mm (SOIC-8 D) |
| MSL 레벨 | — | [DATA_NEEDED: MSL level] |
| AEC-Q100 Qualified | — | No (industrial grade) |