VNI4140K-32 vs VNS3NV04DPTR-E 对比

详细并排对比 VNI4140K-32 出自 STMicroelectronics 和 VNS3NV04DPTR-E 出自 STMicroelectronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

STMicroelectronics
VNS3NV04DPTR-E VNS3NV04DPTR-E - OMNIFET II 40V 3.5A Power Switch | STMicroelectronics

VNS3NV04DPTR-E - OMNIFET II 40V 3.5A Power Switch | STMicroelectronics

VNS3NV04DPTR-E ✓ 量产中

规格对比

参数 VNI4140K-32 VNS3NV04DPTR-E
品牌 STMicroelectronics STMicroelectronics
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.05 $0.96
Device Type Quad high-side smart power solid-state relay Fully autoprotected low-side Power MOSFET switch
Number of Channels 4 —
拓扑 High-side switch (N-channel MOSFET) —
Load Current per Channel 1.0 A (continuous) —
On-State Resistance (RDS(on)) 0.08 ohm per channel —
Supply Voltage (VCC) Max 41 V —
输出配置 1:1 N-Channel —
输出数量 4 —
Diagnostics Per-channel open-load, short-to-ground, thermal fault —
Inductive Load Handling Fast demagnetization (integrated) —
Logic Input Compatibility CMOS/TTL compatible logic inputs —
封装 PowerSSO-24 (24-pin with exposed thermal pad) SO-8 (Tape & Reel)
Package Width 7.50 mm (approximately 0.295 inch) —
安装类型 Surface Mount Surface Mount
Industrial Standard Compliance IEC 61131-2 —
ESD Rating 25 kV (per IEC standard, air discharge) —
Technology ST VIPower (vertical DMOS + CMOS/bipolar control) —
Manufacturer — STMicroelectronics
Product Family — OMNIFET II
Process Technology — VIPower M0-3
Channel Configuration — 2 x N-channel (dual independent or parallel)
Drain-Source Clamp Voltage — 40 V
On-State Resistance (Rds(on)) — 35 mOhm typical / 50 mOhm max
Continuous Drain Current — 3.5 A
Peak Drain Current — 12 A
Current Limitation (typ) — 3.5 A
Maximum Switching Frequency — 50 kHz (DC applications)
工作温度范围 — -40 C to +150 C (junction)
Built-in Protections — Avalanche clamp, current limit, thermal shutdown, ESD gate protection
Automotive Qualified — Yes (per datasheet title variant)
RoHS 状态 — Compliant

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