VNI4140K-32 vs VNS3NV04DPTR-E 비교

다음의 상세 나란히 비교: VNI4140K-32 제조: STMicroelectronics 및 VNS3NV04DPTR-E 제조: STMicroelectronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

STMicroelectronics
VNS3NV04DPTR-E VNS3NV04DPTR-E - OMNIFET II 40V 3.5A Power Switch | STMicroelectronics

VNS3NV04DPTR-E - OMNIFET II 40V 3.5A Power Switch | STMicroelectronics

VNS3NV04DPTR-E ✓ 활성

사양 비교

파라미터 VNI4140K-32 VNS3NV04DPTR-E
브랜드 STMicroelectronics STMicroelectronics
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $2.05 $0.96
Device Type Quad high-side smart power solid-state relay Fully autoprotected low-side Power MOSFET switch
Number of Channels 4 —
토폴로지 High-side switch (N-channel MOSFET) —
Load Current per Channel 1.0 A (continuous) —
On-State Resistance (RDS(on)) 0.08 ohm per channel —
Supply Voltage (VCC) Max 41 V —
출력 구성 1:1 N-Channel —
출력 수 4 —
Diagnostics Per-channel open-load, short-to-ground, thermal fault —
Inductive Load Handling Fast demagnetization (integrated) —
Logic Input Compatibility CMOS/TTL compatible logic inputs —
패키지 PowerSSO-24 (24-pin with exposed thermal pad) SO-8 (Tape & Reel)
Package Width 7.50 mm (approximately 0.295 inch) —
실장 유형 Surface Mount Surface Mount
Industrial Standard Compliance IEC 61131-2 —
ESD Rating 25 kV (per IEC standard, air discharge) —
Technology ST VIPower (vertical DMOS + CMOS/bipolar control) —
Manufacturer — STMicroelectronics
Product Family — OMNIFET II
Process Technology — VIPower M0-3
Channel Configuration — 2 x N-channel (dual independent or parallel)
Drain-Source Clamp Voltage — 40 V
On-State Resistance (Rds(on)) — 35 mOhm typical / 50 mOhm max
Continuous Drain Current — 3.5 A
Peak Drain Current — 12 A
Current Limitation (typ) — 3.5 A
Maximum Switching Frequency — 50 kHz (DC applications)
동작 온도 범위 — -40 C to +150 C (junction)
Built-in Protections — Avalanche clamp, current limit, thermal shutdown, ESD gate protection
Automotive Qualified — Yes (per datasheet title variant)
RoHS 상태 — Compliant

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