VNQ660SP-E vs VNQ660SPTR-E 对比

详细并排对比 VNQ660SP-E 出自 STMicroelectronics 和 VNQ660SPTR-E 出自 STMicroelectronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

STMicroelectronics
VNQ660SPTR-E VNQ660SPTR-E - Quad 6A High-Side Smart Power Switch | STMicroelectronics

VNQ660SPTR-E - Quad 6A High-Side Smart Power Switch | STMicroelectronics

VNQ660SPTR-E ✓ 量产中

规格对比

参数 VNQ660SP-E VNQ660SPTR-E
品牌 STMicroelectronics STMicroelectronics
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.45 $5.37
拓扑 High-Side Switch (Solid State Relay) —
Number of Channels 4 (Quad) 4
Technology STMicroelectronics VIPower M0-3 ST VIPower M0-3 (vertical DMOS)
Supply Voltage (Vcc) 6 V to 36 V —
On-State Resistance (RDS(on)) 40 mOhm per channel (typical) 40 mOhm typical (per channel)
Output Current per Channel 6 A continuous —
Output Current (Peak) [DATA_NEEDED: peak current per channel] —
Input Type CMOS-compatible logic inputs —
Off-State Open-Load Detection Yes —
Undervoltage Shutdown Yes —
Overvoltage Shutdown / Clamp Yes —
热关断 Yes —
Current Limitation Yes —
工作温度 [DATA_NEEDED: operating temperature range] -40 C to +125 C
封装 PowerSO-10 (Exposed Bottom Pad) PowerSO-10 with exposed bottom pad
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant
开通延迟时间 40 us (typ) —
功能 — Quad-channel high-side solid-state relay
Switch Type — High-side N-channel power MOSFET
Supply Voltage (VCC) — 6 V to 36 V
Maximum Continuous Output Current (per channel) — 6 A
Input Compatibility — CMOS logic-level inputs
Protection Features — Thermal shutdown, overvoltage clamp, undervoltage shutdown, open-load detection (off state), reverse battery protection
Status Feedback — Analog status flag per channel
Off-State Quiescent Current — [DATA_NEEDED: standby Iq]
Maximum Power Dissipation — 113.6 W (with proper thermal design)

数据手册与资源

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