VNQ660SP-E vs VNQ660SPTR-E 비교

다음의 상세 나란히 비교: VNQ660SP-E 제조: STMicroelectronics 및 VNQ660SPTR-E 제조: STMicroelectronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 VNQ660SP-E VNQ660SPTR-E
브랜드 STMicroelectronics STMicroelectronics
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.45 $5.37
토폴로지 High-Side Switch (Solid State Relay) —
Number of Channels 4 (Quad) 4
Technology STMicroelectronics VIPower M0-3 ST VIPower M0-3 (vertical DMOS)
Supply Voltage (Vcc) 6 V to 36 V —
On-State Resistance (RDS(on)) 40 mOhm per channel (typical) 40 mOhm typical (per channel)
Output Current per Channel 6 A continuous —
Output Current (Peak) [DATA_NEEDED: peak current per channel] —
Input Type CMOS-compatible logic inputs —
Off-State Open-Load Detection Yes —
Undervoltage Shutdown Yes —
Overvoltage Shutdown / Clamp Yes —
열 차단 Yes —
Current Limitation Yes —
동작 온도 [DATA_NEEDED: operating temperature range] -40 C to +125 C
패키지 PowerSO-10 (Exposed Bottom Pad) PowerSO-10 with exposed bottom pad
실장 유형 Surface Mount Surface Mount
RoHS 상태 Compliant Compliant
턴온 지연 시간 40 us (typ) —
기능 — Quad-channel high-side solid-state relay
Switch Type — High-side N-channel power MOSFET
Supply Voltage (VCC) — 6 V to 36 V
Maximum Continuous Output Current (per channel) — 6 A
Input Compatibility — CMOS logic-level inputs
Protection Features — Thermal shutdown, overvoltage clamp, undervoltage shutdown, open-load detection (off state), reverse battery protection
Status Feedback — Analog status flag per channel
Off-State Quiescent Current — [DATA_NEEDED: standby Iq]
Maximum Power Dissipation — 113.6 W (with proper thermal design)

데이터시트 & 자료

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