2EDN8534FXTMA1 - 5A Dual Low-Side Gate Driver | Infineon
料号： 2EDN8534FXTMA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.66 | $16.60 |
| 100 | $1.48 | $148.00 |
| 500 | $1.32 | $660.00 |
| 1,000 | $1.18 | $1,180.00 |
| 2,500 | $1.05 | $2,625.00 |
2EDN8534FXTMA1 概述
A gate driver is a power-management IC that sits between a low-current control stage (microcontroller, FPGA, isolator) and the gate of a power transistor. Because the gate of a power MOSFET effectively appears as a large nonlinear capacitor (often several nF), the driver must supply and remove charge quickly to achieve low switching loss. Low-side drivers reference the source/emitter of the switch to the system ground and only need to swing the gate between ground and the gate-drive supply, making them the simplest, lowest-cost gate-drive topology. Within the broader taxonomy, the 2EDN8534 belongs to gate driver ICs, which sit under power management ICs and are essential building blocks of every switched-mode power supply, motor drive, and Class-D amplifier. The "EiceDRIVER" brand denotes Infineon's gate-driver product family.
Key features include 4.5 V to 20 V supply voltage range, 5 A peak source/sink output current, 19 ns typical propagation delay, 1 ns channel-to-channel delay matching, and a Miller-clamp transistor for active gate-voltage clamping. The non-inverting inputs are LV-TTL compatible and tolerate absolute maximum input voltages from -12 V to +22 V, simplifying interface with microcontroller GPIO and digital isolators. Internal under-voltage lockout (UVLO) protects the power stage from insufficient gate drive. The DSO-8 package offers a thermal-resistance performance adequate for continuous switching at moderate frequencies.
The EiceDRIVER 2EDN family uses a matched dual-channel architecture that minimizes timing skew between channels, critical for synchronous rectifiers and half-bridge low-side drive where channel mismatch would cause body-diode conduction losses. Compared to discrete push-pull driver pairs, the 2EDN8534F provides tighter delay matching, lower quiescent current, and integrated active Miller clamping that prevents parasitic turn-on of the complementary device in half-bridge topologies.
Typical applications include DC-DC converter synchronous rectification, telecom brick and POL converter gate drive, Class-D audio amplifier output stage drive, motor-driver low-side drive, and industrial SMPS. The wide input-voltage tolerance and active Miller clamp make it especially well suited to high-frequency, hard-switched converters using GaN or SiC devices.
When designing with this device, place input and output bypass capacitors as close as possible to the IC and keep gate-drive loops small to minimize parasitic inductance. The 5 A peak drive capability enables switching of large power MOSFETs at high dV/dt, so PCB layout must control ground bounce and avoid noise coupling back into the input pins.
This page synthesizes distributor pricing, parametric drop-in alternatives, and practical design notes not found in the Infineon datasheet alone.
直接替换替代料： 2EDN8534FXTMA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： 2EDN8534FXTMA1 （相同外形与封装尺寸） ——差异在于 Package, Driver Type, Input Voltage Tolerance, Number of Channels, Operating Temperature.
快速对比工具——选择替代料号进行并排对比：
2EDN8534FXTMA2
✅ 直接替换📋 参考替代料（不在目录中）
2EDN7534FXTMA1
✅ 直接替换✓ 有现货
$0.71 / 个
查看数据手册 →2EDN8524FXTMA1
✅ 直接替换📋 参考替代料（不在目录中）
UCC27531DBVR
✅ 直接替换📋 参考替代料（不在目录中）
NCP5106BDR2G
✅ 直接替换📋 参考替代料（不在目录中）
IXD_609PI
✅ 直接替换📋 参考替代料（不在目录中）
2EDN8534FXTMA1 最大额定值与电气特性
| Driver Type | Dual Low-Side Gate Driver |
| Number of Channels | 2 |
| 输出配置 | Non-Inverting |
| Peak Source/Sink Current | 5 A / 5 A |
| Supply Voltage (VCC) | 4.5 V to 20 V |
| Propagation Delay (Typ) | 19 ns |
| Channel-to-Channel Delay Match | 1 ns (typ) |
| Input Compatibility | LV-TTL |
| Input Voltage Tolerance | -12 V to +22 V (absolute max) |
| Active Miller Clamp | Yes (internal) |
| Under-Voltage Lockout (UVLO) | Yes |
| 工作温度范围 | -40 C to +125 C |
| 封装 | PG-DSO-8 (DSO-8) |
| 安装类型 | Surface Mount |
| RoHS 状态 | Compliant |
| Family | EiceDRIVER 2EDN |
2EDN8534FXTMA1 引脚配置
| 引脚 1 | IN1 — Channel 1 non-inverting logic input (LV-TTL) |
| 引脚 2 | GND — Ground reference for input and output stages |
| 引脚 3 | IN2 — Channel 2 non-inverting logic input (LV-TTL) |
| 引脚 4 | OUT2 — Channel 2 gate-drive output (5 A peak) |
| 引脚 5 | VCC — Supply voltage input (4.5 V to 20 V) |
| 引脚 6 | OUT1 — Channel 1 gate-drive output (5 A peak) |
| 引脚 7 | GND — Ground reference (duplicate pin for low-inductance loop) |
| 引脚 8 | EN — Common enable input (active-high, LV-TTL) |
典型应用
2EDN8534FXTMA1 适用于 6 应用s: DC-DC Converter Synchronous Rectifier Gate Drive, Telecom Brick and POL Converter Gate Drive, Class-D Audio Amplifier Output Stage Drive, Industrial Servo Motor Drive Low-Side Gate Drive, GaN HEMT Half-Bridge Low-Side Driver, Solar Microinverter and MPPT Stage Gate Drive.
DC-DC Converter Synchronous Rectifier Gate Drive
The 2EDN8534FXTMA1 drives the synchronous-rectifier MOSFETs in isolated and non-isolated DC-DC converters. The dual-channel architecture with 1 ns channel-to-channel matching ensures that both SR MOSFETs switch within nanoseconds of each other, eliminating body-diode conduction and boosting converter efficiency by 1-2%. With 5 A peak drive current and 19 ns propagation delay, the IC handles high-current MOSFETs at switching frequencies up to several hundred kHz. The 4.5 V to 20 V VCC range covers both 5 V digital rails and 12 V intermediate bus voltages, while the active Miller clamp prevents shoot-through during transient dV/dt events. Recommended companion: Infineon IPD031N03LGATMA1 (30 V MOSFET) or IPD90N06S404ATMA2 (60 V MOSFET) for the SR stage.
推荐
Telecom Brick and POL Converter Gate Drive
In telecom brick converters (48 V to 12 V/5 V intermediate bus) and Point-of-Load (POL) converters, the 2EDN8534FXTMA1 drives the primary-side synchronous rectifiers and secondary-side buck MOSFETs. The wide 4.5 V to 20 V VCC range interfaces directly with both 5 V and 12 V bias rails without a separate regulator. The 1 ns channel-to-channel delay match is critical in half-bridge primary stages where mismatch would create DC-bias and transformer-saturation issues. Combined with the -12 V to +22 V absolute-maximum input tolerance, the IC tolerates noise on the control-input lines from digital isolators and gate-drive transformers. Recommended companion: TLS835B2ELVSEXUMA1 LDO providing the 5 V bias for the 2EDN8534F VCC pin.
推荐
Class-D Audio Amplifier Output Stage Drive
In Class-D audio amplifiers, the 2EDN8534FXTMA1 drives the low-side MOSFETs of the half-bridge output stage. The 5 A peak current capability drives large output MOSFETs required for high-power (>200 W) amplifiers. The 19 ns propagation delay with 1 ns channel-to-channel matching minimizes dead-time insertion losses, directly improving audio amplifier THD+N performance. The active Miller clamp prevents parasitic turn-on of the low-side MOSFET during the high-side switch transition, eliminating shoot-through currents that would degrade audio quality. The DSO-8 package provides adequate thermal performance for continuous audio switching at 250-500 kHz PWM frequencies. Recommended companion: IRS2092STRPBF or IRS2302STRPBF Class-D controller generating the PWM signals.
推荐
Industrial Servo Motor Drive Low-Side Gate Drive
In industrial servo drives and three-phase motor inverters, the 2EDN8534FXTMA1 serves as the low-side gate driver per phase. The dual channels drive the low-side IGBTs or MOSFETs of two phases, with the third phase driven by an additional 2EDN8534F. The 4.5 V to 20 V VCC range interfaces with 15 V gate-drive bias rails used in industrial inverters. The 1 ns channel-to-channel matching minimizes switching asymmetry that would create DC-bias circulating currents in the motor windings, reducing torque ripple. The -40 C to +125 C operating temperature range supports industrial ambient conditions. Recommended companion: IKD04N60RATMA1 (600 V IGBT) or IAUC100N04S6N028ATMA1 (40 V MOSFET) for motor-side switching.
推荐
GaN HEMT Half-Bridge Low-Side Driver
The 2EDN8534FXTMA1 is widely used to drive GaN HEMTs in high-frequency (>1 MHz) hard-switched converters such as LiDAR laser drivers, USB-PD adapters, and 48 V point-of-load converters. The 5 A peak current is sufficient to charge GaN gate capacitances (typically <1 nC) within nanoseconds, achieving sub-10 ns switching transitions. The 4.5 V VCC minimum is compatible with the typical 5 V gate-drive rail of enhancement-mode GaN HEMTs. The active Miller clamp prevents false turn-on of the complementary GaN switch during high dV/dt transitions. The DSO-8 package keeps the gate-drive loop compact, minimizing parasitic inductance that would otherwise ring and degrade GaN switching performance.
推荐
Solar Microinverter and MPPT Stage Gate Drive
In solar microinverters and MPPT (Maximum Power Point Tracking) boost converters, the 2EDN8534FXTMA1 drives the synchronous-rectifier MOSFETs in the high-frequency switching stage. The 4.5 V to 20 V VCC range accommodates the auxiliary bias voltages derived from the solar panel voltage (typically 12 V or 15 V). The 5 A peak drive current and 19 ns propagation delay minimize switching losses that directly impact MPPT conversion efficiency. The IC's industrial -40 C to +125 C operating range handles outdoor solar installation thermal conditions. The dual-channel architecture drives both SR MOSFETs in a half-bridge or push-pull configuration, simplifying BOM and PCB layout.
推荐
推荐产品汇总
工程参考数据： 2EDN8534FXTMA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | 2EDN8534FXTMA2 | 2EDN7534FXTMA1 | UCC27531DBVR | NCP5106BDR2G |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon (same) | Infineon (same) | Texas Instruments | onsemi |
| Package | PG-DSO-8 (DSO-8) | PG-DSO-8 (DSO-8) - same | PG-DSO-8 (DSO-8) - same | DSO-8 (SOIC-8) - same | DSO-8 (SOIC-8) - same |
| Number of Channels | 2 | 2 | 2 | 2 | 2 |
| Peak Source/Sink Current | 5 A / 5 A | 5 A / 5 A | 5 A / 5 A | 5 A / 5 A | 5 A / 5 A |
| Supply Voltage (VCC) | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 20 V | 10 V to 18 V (narrower) | 10 V to 20 V (narrower) |
| Propagation Delay (Typ) | 19 ns | 19 ns | 19 ns | 17 ns (faster) | 50 ns (slower) |
| Channel-to-Channel Match | 1 ns (typ) | 1 ns | 1 ns | 1 ns | 20 ns (worse) |
| Active Miller Clamp | Yes (internal) | Yes | Yes | No (external required) | Yes |
| Input Voltage Tolerance | -12 V to +22 V | -12 V to +22 V | -12 V to +22 V | -5 V to +20 V (narrower) | -1 V to VCC (narrower) |
关键差异点
- Wide 4.5 V to 20 V supply voltage range with 22 V absolute max （对比 UCC27531DBVR)
- Industry-leading -12 V to +22 V input voltage tolerance （对比 NCP5106BDR2G)
- Integrated active Miller clamp on both channels （对比 UCC27531DBVR)
- 1 ns channel-to-channel delay matching （对比 NCP5106BDR2G)
设计说明
Place the VCC bypass capacitor (typically 1 uF X7R ceramic) as close as possible to the VCC pin (pin 5) and the adjacent GND pin (pin 7). Minimize the gate-drive loop area by routing the OUTx traces directly over a continuous ground plane to the gate and source pins of the power MOSFET. A compact gate-drive loop is critical when driving large MOSFETs at high dV/dt - even a few nH of stray inductance can cause gate-rail ringing exceeding the driver's absolute-maximum VCC rating. Use multiple vias on the GND pin to stitch the package thermal pad to internal ground planes for low-impedance return paths.
Estimated: at 500 kHz switching frequency with 1 nC gate charge and 20 V VCC, the 2EDN8534FXTMA1 dissipates approximately P = Qg * VCC * fsw = 1 nC * 20 V * 500 kHz = 10 mW per channel (20 mW total), which is well within the DSO-8 thermal capability. For higher frequencies (1-2 MHz) or larger MOSFETs (Qg > 10 nC), dissipation rises proportionally and may require thermal relief via a copper pour under the thermal pad. The DSO-8 package theta_JA is approximately 110 C/W on a standard JEDEC 2S2P test board.
The IN1/IN2 inputs of the 2EDN8534FXTMA1 are LV-TTL compatible but tolerate absolute maximum voltages from -12 V to +22 V, providing headroom for noisy digital-isolator outputs or transformer-coupled gate-drive signals. However, sustained input voltages outside the recommended -5 V to +20 V range may trigger input-protection clamping currents. Add a small RC filter (100 ohm + 100 pF) on each input if the source signal has long rise/fall times or ringing from long PCB traces.
Do not operate the 2EDN8534FXTMA1 with VCC below 4.5 V - the under-voltage lockout (UVLO) will hold OUTx low, preventing gate drive. Ensure VCC decoupling is sufficient to handle the 5 A peak output current transients without VCC rail collapse below UVLO threshold. The EN pin (pin 8) must be pulled high for normal operation; leaving it floating enables internal pull-down logic that disables both outputs. Verify the absolute-maximum VCC of 22 V is never exceeded during input-voltage transients from upstream converters.
Keep the Miller-clamp return path short - route the clamp circuitry close to the power-MOSFET drain/source junction it protects. The active Miller clamp engages only when the gate driver output is in the low state, so a poor PCB layout that prevents the clamp from turning on quickly can defeat its purpose. Use a separate analog ground island under the driver if your design mixes high-current switching returns with low-level signal grounds, joined only at a single point near the driver's GND pin.
合规信息
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - select the 2EDN8534FXTMA1Q variant for automotive applications. Lead-free and halogen-free packaging per Infineon environmental compliance disclosures.
