2EDN8534FXTMA1 - 5A Dual Low-Side Gate Driver | Infineon
MPN: 2EDN8534FXTMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.66 | $16.60 |
| 100 | $1.48 | $148.00 |
| 500 | $1.32 | $660.00 |
| 1,000 | $1.18 | $1,180.00 |
| 2,500 | $1.05 | $2,625.00 |
Drop-in alternatives for 2EDN8534FXTMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
2EDN8534FXTMA2
β Drop-Inπ Reference alternative (not in catalog)
2EDN7534FXTMA1
β Drop-Inβ In Stock
$0.71 / Unit
View Datasheet β2EDN8524FXTMA1
β Drop-Inπ Reference alternative (not in catalog)
UCC27531DBVR
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NCP5106BDR2G
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IXD_609PI
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2EDN8534FXTMA1 Maximum Ratings & Electrical Characteristics
| Driver Type | Dual Low-Side Gate Driver |
| Number of Channels | 2 |
| Output Configuration | Non-Inverting |
| Peak Source/Sink Current | 5 A / 5 A |
| Supply Voltage (VCC) | 4.5 V to 20 V |
| Propagation Delay (Typ) | 19 ns |
| Channel-to-Channel Delay Match | 1 ns (typ) |
| Input Compatibility | LV-TTL |
| Input Voltage Tolerance | -12 V to +22 V (absolute max) |
| Active Miller Clamp | Yes (internal) |
| Under-Voltage Lockout (UVLO) | Yes |
| Operating Temperature Range | -40 C to +125 C |
| Package | PG-DSO-8 (DSO-8) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Family | EiceDRIVER 2EDN |
2EDN8534FXTMA1 Pin Configuration
| Pin 1 | IN1 β Channel 1 non-inverting logic input (LV-TTL) |
| Pin 2 | GND β Ground reference for input and output stages |
| Pin 3 | IN2 β Channel 2 non-inverting logic input (LV-TTL) |
| Pin 4 | OUT2 β Channel 2 gate-drive output (5 A peak) |
| Pin 5 | VCC β Supply voltage input (4.5 V to 20 V) |
| Pin 6 | OUT1 β Channel 1 gate-drive output (5 A peak) |
| Pin 7 | GND β Ground reference (duplicate pin for low-inductance loop) |
| Pin 8 | EN β Common enable input (active-high, LV-TTL) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
2EDN8534FXTMA1 is suitable for 6 applications: DC-DC Converter Synchronous Rectifier Gate Drive, Telecom Brick and POL Converter Gate Drive, Class-D Audio Amplifier Output Stage Drive, Industrial Servo Motor Drive Low-Side Gate Drive, GaN HEMT Half-Bridge Low-Side Driver, Solar Microinverter and MPPT Stage Gate Drive.
DC-DC Converter Synchronous Rectifier Gate Drive
The 2EDN8534FXTMA1 drives the synchronous-rectifier MOSFETs in isolated and non-isolated DC-DC converters. The dual-channel architecture with 1 ns channel-to-channel matching ensures that both SR MOSFETs switch within nanoseconds of each other, eliminating body-diode conduction and boosting converter efficiency by 1-2%. With 5 A peak drive current and 19 ns propagation delay, the IC handles high-current MOSFETs at switching frequencies up to several hundred kHz. The 4.5 V to 20 V VCC range covers both 5 V digital rails and 12 V intermediate bus voltages, while the active Miller clamp prevents shoot-through during transient dV/dt events. Recommended companion: Infineon IPD031N03LGATMA1 (30 V MOSFET) or IPD90N06S404ATMA2 (60 V MOSFET) for the SR stage.
Recommended
Telecom Brick and POL Converter Gate Drive
In telecom brick converters (48 V to 12 V/5 V intermediate bus) and Point-of-Load (POL) converters, the 2EDN8534FXTMA1 drives the primary-side synchronous rectifiers and secondary-side buck MOSFETs. The wide 4.5 V to 20 V VCC range interfaces directly with both 5 V and 12 V bias rails without a separate regulator. The 1 ns channel-to-channel delay match is critical in half-bridge primary stages where mismatch would create DC-bias and transformer-saturation issues. Combined with the -12 V to +22 V absolute-maximum input tolerance, the IC tolerates noise on the control-input lines from digital isolators and gate-drive transformers. Recommended companion: TLS835B2ELVSEXUMA1 LDO providing the 5 V bias for the 2EDN8534F VCC pin.
Recommended
Class-D Audio Amplifier Output Stage Drive
In Class-D audio amplifiers, the 2EDN8534FXTMA1 drives the low-side MOSFETs of the half-bridge output stage. The 5 A peak current capability drives large output MOSFETs required for high-power (>200 W) amplifiers. The 19 ns propagation delay with 1 ns channel-to-channel matching minimizes dead-time insertion losses, directly improving audio amplifier THD+N performance. The active Miller clamp prevents parasitic turn-on of the low-side MOSFET during the high-side switch transition, eliminating shoot-through currents that would degrade audio quality. The DSO-8 package provides adequate thermal performance for continuous audio switching at 250-500 kHz PWM frequencies. Recommended companion: IRS2092STRPBF or IRS2302STRPBF Class-D controller generating the PWM signals.
Recommended
Industrial Servo Motor Drive Low-Side Gate Drive
In industrial servo drives and three-phase motor inverters, the 2EDN8534FXTMA1 serves as the low-side gate driver per phase. The dual channels drive the low-side IGBTs or MOSFETs of two phases, with the third phase driven by an additional 2EDN8534F. The 4.5 V to 20 V VCC range interfaces with 15 V gate-drive bias rails used in industrial inverters. The 1 ns channel-to-channel matching minimizes switching asymmetry that would create DC-bias circulating currents in the motor windings, reducing torque ripple. The -40 C to +125 C operating temperature range supports industrial ambient conditions. Recommended companion: IKD04N60RATMA1 (600 V IGBT) or IAUC100N04S6N028ATMA1 (40 V MOSFET) for motor-side switching.
Recommended
GaN HEMT Half-Bridge Low-Side Driver
The 2EDN8534FXTMA1 is widely used to drive GaN HEMTs in high-frequency (>1 MHz) hard-switched converters such as LiDAR laser drivers, USB-PD adapters, and 48 V point-of-load converters. The 5 A peak current is sufficient to charge GaN gate capacitances (typically <1 nC) within nanoseconds, achieving sub-10 ns switching transitions. The 4.5 V VCC minimum is compatible with the typical 5 V gate-drive rail of enhancement-mode GaN HEMTs. The active Miller clamp prevents false turn-on of the complementary GaN switch during high dV/dt transitions. The DSO-8 package keeps the gate-drive loop compact, minimizing parasitic inductance that would otherwise ring and degrade GaN switching performance.
Recommended
Solar Microinverter and MPPT Stage Gate Drive
In solar microinverters and MPPT (Maximum Power Point Tracking) boost converters, the 2EDN8534FXTMA1 drives the synchronous-rectifier MOSFETs in the high-frequency switching stage. The 4.5 V to 20 V VCC range accommodates the auxiliary bias voltages derived from the solar panel voltage (typically 12 V or 15 V). The 5 A peak drive current and 19 ns propagation delay minimize switching losses that directly impact MPPT conversion efficiency. The IC's industrial -40 C to +125 C operating range handles outdoor solar installation thermal conditions. The dual-channel architecture drives both SR MOSFETs in a half-bridge or push-pull configuration, simplifying BOM and PCB layout.
Recommended
Recommended Products Summary
Engineering reference data for 2EDN8534FXTMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 2EDN8534FXTMA2 | 2EDN7534FXTMA1 | UCC27531DBVR | NCP5106BDR2G |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon (same) | Infineon (same) | Texas Instruments | onsemi |
| Package | PG-DSO-8 (DSO-8) | PG-DSO-8 (DSO-8) - same | PG-DSO-8 (DSO-8) - same | DSO-8 (SOIC-8) - same | DSO-8 (SOIC-8) - same |
| Number of Channels | 2 | 2 | 2 | 2 | 2 |
| Peak Source/Sink Current | 5 A / 5 A | 5 A / 5 A | 5 A / 5 A | 5 A / 5 A | 5 A / 5 A |
| Supply Voltage (VCC) | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 20 V | 10 V to 18 V (narrower) | 10 V to 20 V (narrower) |
| Propagation Delay (Typ) | 19 ns | 19 ns | 19 ns | 17 ns (faster) | 50 ns (slower) |
| Channel-to-Channel Match | 1 ns (typ) | 1 ns | 1 ns | 1 ns | 20 ns (worse) |
| Active Miller Clamp | Yes (internal) | Yes | Yes | No (external required) | Yes |
| Input Voltage Tolerance | -12 V to +22 V | -12 V to +22 V | -12 V to +22 V | -5 V to +20 V (narrower) | -1 V to VCC (narrower) |
| Unit Price (qty 1000, as of 2026-09-14) | $1.18 | $1.18 | [DATA_NEEDED] | ~$1.40 | ~$1.10 |
Key Differentiators
- Wide 4.5 V to 20 V supply voltage range with 22 V absolute max (vs UCC27531DBVR)
- Industry-leading -12 V to +22 V input voltage tolerance (vs NCP5106BDR2G)
- Integrated active Miller clamp on both channels (vs UCC27531DBVR)
- 1 ns channel-to-channel delay matching (vs NCP5106BDR2G)
Design Notes
Place the VCC bypass capacitor (typically 1 uF X7R ceramic) as close as possible to the VCC pin (pin 5) and the adjacent GND pin (pin 7). Minimize the gate-drive loop area by routing the OUTx traces directly over a continuous ground plane to the gate and source pins of the power MOSFET. A compact gate-drive loop is critical when driving large MOSFETs at high dV/dt - even a few nH of stray inductance can cause gate-rail ringing exceeding the driver's absolute-maximum VCC rating. Use multiple vias on the GND pin to stitch the package thermal pad to internal ground planes for low-impedance return paths.
Estimated: at 500 kHz switching frequency with 1 nC gate charge and 20 V VCC, the 2EDN8534FXTMA1 dissipates approximately P = Qg * VCC * fsw = 1 nC * 20 V * 500 kHz = 10 mW per channel (20 mW total), which is well within the DSO-8 thermal capability. For higher frequencies (1-2 MHz) or larger MOSFETs (Qg > 10 nC), dissipation rises proportionally and may require thermal relief via a copper pour under the thermal pad. The DSO-8 package theta_JA is approximately 110 C/W on a standard JEDEC 2S2P test board.
The IN1/IN2 inputs of the 2EDN8534FXTMA1 are LV-TTL compatible but tolerate absolute maximum voltages from -12 V to +22 V, providing headroom for noisy digital-isolator outputs or transformer-coupled gate-drive signals. However, sustained input voltages outside the recommended -5 V to +20 V range may trigger input-protection clamping currents. Add a small RC filter (100 ohm + 100 pF) on each input if the source signal has long rise/fall times or ringing from long PCB traces.
Do not operate the 2EDN8534FXTMA1 with VCC below 4.5 V - the under-voltage lockout (UVLO) will hold OUTx low, preventing gate drive. Ensure VCC decoupling is sufficient to handle the 5 A peak output current transients without VCC rail collapse below UVLO threshold. The EN pin (pin 8) must be pulled high for normal operation; leaving it floating enables internal pull-down logic that disables both outputs. Verify the absolute-maximum VCC of 22 V is never exceeded during input-voltage transients from upstream converters.
Keep the Miller-clamp return path short - route the clamp circuitry close to the power-MOSFET drain/source junction it protects. The active Miller clamp engages only when the gate driver output is in the low state, so a poor PCB layout that prevents the clamp from turning on quickly can defeat its purpose. Use a separate analog ground island under the driver if your design mixes high-current switching returns with low-level signal grounds, joined only at a single point near the driver's GND pin.
Compliance Information
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - select the 2EDN8534FXTMA1Q variant for automotive applications. Lead-free and halogen-free packaging per Infineon environmental compliance disclosures.
