BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon
料号： BSC146N10LS5ATMA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.31 | $131.00 |
| 500 | $1.05 | $525.00 |
| 1,000 | $0.89 | $890.00 |
| 5,000 | $0.74 | $3,700.00 |
BSC146N10LS5ATMA1 概述
What is an OptiMOS 5 power MOSFET? OptiMOS is Infineon's family of low-voltage power MOSFETs optimized for high-frequency switching power conversion. In the system hierarchy, a power MOSFET is a discrete semiconductor that switches current between source and drain under gate control; it sits beneath DC-DC converters, motor drives, and load switches in the power-management tree. Logic-level variants (the L in the part number) accept low gate-drive voltages, enabling direct interface with microcontrollers and low-voltage PWM controllers. OptiMOS 5 is the 5th-generation refinement that reduces RDS(on) x Qg figure-of-merit versus OptiMOS 3 and 4, enabling both higher efficiency and smaller magnetics at the same load.
Key features of the BSC146N10LS5 include 14.6 mOhm max RDS(on) at VGS=10 V, 100 V VDS rating suitable for 48 V telecom and industrial buses with ample derating margin, logic-level VGS(th) typically around 1.7 V supporting 5 V gate drive, and a SuperSO8 5x6 mm footprint that is pin-compatible with the standard Power-SO8 / SO-8FL used across the MOSFET industry. The OptiMOS 5 trench process delivers lower switching losses than previous generations and improved avalanche ruggedness for unclamped inductive switching events.
The architecture uses an advanced trench-based cell structure that maximizes silicon utilization for low on-state loss while keeping gate charge low to minimize switching loss at high frequencies. Combined, the low RDS(on) x Qg product translates to cooler operation and higher efficiency in hard-switched topologies such as buck converters, half-bridges, and synchronous rectifiers.
Typical applications include 48 V telecom hot-swap and OR-ing, USB-PD and adapter buck stages, motor drive half-bridges for eMobility and small BLDC fans, synchronous rectification in isolated DC-DC modules, and battery protection FETs in 12 V / 24 V eTools. The wide VDS margin and small footprint also suit point-of-load conversion in industrial PLC and server auxiliary rails.
When designing with this MOSFET, carefully size the gate-drive loop and place a 10-100 nF ceramic bypass close to the gate-source terminals. Confirm SOA at the worst-case ID, VDS, and pulse duration for hot-swap, and respect the Tc=25 C absolute rating derating curve above 25 C case. Keep the source-sense return path short to avoid parasitic inductance that can cause VGS ringing during fast switching transitions.
This page synthesizes distributor pricing tiers, drop-in alternative MPNs in the same SuperSO8 footprint, and practical design notes that complement the manufacturer datasheet for engineering reuse.
直接替换替代料： BSC146N10LS5ATMA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： BSC146N10LS5ATMA1 （相同外形与封装尺寸） ——差异在于 Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Gate Threshold Voltage (VGS(th)).
快速对比工具——选择替代料号进行并排对比：
BSC090N10NS5ATMA1
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
BSC190N10LS5ATMA1
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
BSC027N06LS5ATMA1
✅ 直接替换✓ 有现货
$0.66 / 个
查看数据手册 →IAUZ40N06S5L050ATMA1
✅ 直接替换✓ 有现货
$0.71 / 个
查看数据手册 →BSZ150N10LS3GATMA1
✅ 直接替换✓ 有现货
$0.65 / 个
查看数据手册 →BSC118N10NSGATMA1
✅ 直接替换✓ 有现货
$0.78 / 个
查看数据手册 →BSC146N10LS5ATMA1 最大额定值与电气特性
| Technology | OptiMOS 5 (logic-level) |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (VDS) max | 100 V |
| Continuous Drain Current (ID) at Tc=25 C | 44 A |
| RDS(on) max at VGS=10 V | 14.6 mOhm |
| Gate-Source Voltage (VGS) max | ±20 V |
| Gate Threshold Voltage (VGS(th)) | Logic-level (typ. ~1.7 V) |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 52 W |
| 工作温度范围 | -55 C to +150 C (TJ max) |
| 封装 | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| 安装类型 | Surface Mount |
| MSL 等级 | 1 (per JEDEC J-STD-020) |
| RoHS 状态 | Compliant |
BSC146N10LS5ATMA1 引脚配置
| 引脚 1 | Source — Source (Sense) |
| 引脚 2 | Source — Source |
| 引脚 3 | Source — Source |
| 引脚 4 | Gate — Gate |
| 引脚 5 | Drain — Drain |
| 引脚 6 | Drain — Drain |
| 引脚 7 | Drain — Drain |
| 引脚 8 | Drain — Drain |
| 引脚 EP | Drain (Exposed Pad) — Drain / Thermal pad |
安全工作区 (estimated from datasheet family)
典型应用
BSC146N10LS5ATMA1 适用于 6 应用s: 48 V Telecom Hot-Swap / OR-ing, USB-PD / Adapter Buck Synchronous Rectifier, Motor Drive Half-Bridge (eMobility, BLDC Fans), Synchronous Rectification in Isolated DC-DC Modules, 12 V / 24 V Battery Protection FET (eTools), Point-of-Load Conversion in Server / Industrial Auxiliary Rails.
48 V Telecom Hot-Swap / OR-ing
The BSC146N10LS5ATMA1's 100 V VDS provides a 2x derating margin above the 48 V telecom rail, and its 44 A ID rating handles 600 W hot-swap cards. The 14.6 mOhm RDS(on) at VGS = 10 V keeps conduction loss low for OR-ing FETs where a single device carries full load current continuously. Place a 10 kohm gate-source resistor and a TVS clamp on the drain to suppress transient overshoot during hot-plug insertion events.
推荐
USB-PD / Adapter Buck Synchronous Rectifier
In USB-PD and laptop adapter buck stages, the BSC146N10LS5ATMA1 acts as the low-side synchronous rectifier, complementing a high-side 100 V-rated FET. Its OptiMOS 5 low RDS(on) x Qg product minimizes switching loss at 200-400 kHz switching frequencies, and the logic-level gate threshold allows direct 5 V drive from common buck controllers. The SuperSO8 footprint keeps the power loop area small, reducing parasitic inductance and ringing.
推荐
Motor Drive Half-Bridge (eMobility, BLDC Fans)
For eMobility and small BLDC fan half-bridges on 24-48 V rails, the BSC146N10LS5ATMA1 provides the low-side switch with 14.6 mOhm RDS(on) minimizing conduction loss during PWM duty cycles up to 100 percent. Its logic-level VGS(th) eliminates the need for a gate-driver charge pump when paired with a 5 V or 12 V microcontroller PWM, reducing BOM cost. Verify SOA at the worst-case locked-rotor current pulse duration.
推荐
Synchronous Rectification in Isolated DC-DC Modules
In isolated 48 V to 5 V or 12 V DC-DC bricks, the BSC146N10LS5ATMA1 serves as the secondary-side synchronous rectifier. Its 100 V VDS handles the reflected primary voltage plus ringing with safe margin, and the low RDS(on) reduces rectifier loss which dominates efficiency at high load currents. The SuperSO8 footprint allows dual-side cooling for higher power density in quarter-brick and sixteenth-brick form factors.
推荐
12 V / 24 V Battery Protection FET (eTools)
For battery protection in cordless eTools operating from 12-24 V Li-ion packs, the BSC146N10LS5ATMA1 provides the load-side disconnect switch with 100 V VDS that easily exceeds any fault-mode transient voltage on the battery rail. The 14.6 mOhm RDS(on) at VGS = 10 V keeps voltage drop under 1.5 V at 100 A peak discharge, and the SuperSO8 footprint supports automated high-volume assembly.
推荐
Point-of-Load Conversion in Server / Industrial Auxiliary Rails
In server and industrial PLC auxiliary rails converting 24-48 V down to 12 V or 5 V, the BSC146N10LS5ATMA1 acts as the switching or synchronous FET. Its OptiMOS 5 technology delivers lower RDS(on) x Qg than previous generations, enabling higher switching frequencies that shrink inductor size. The 100 V VDS rating provides robust transient immunity for hot-plug and load-dump events common in industrial environments.
推荐
推荐产品汇总
工程参考数据： BSC146N10LS5ATMA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | BSC090N10NS5ATMA1 | BSC190N10LS5ATMA1 | BSC118N10NSGATMA1 | BSC027N06LS5ATMA1 | IAUZ40N06S5L050ATMA1 | BSZ150N10LS3GATMA1 |
|---|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-6 (SuperSO8 5x6) | PG-TDSON-8-6 - same | PG-TDSON-8-6 - same | PG-TDSON-8-6 - same | PG-TDSON-8-6 - same | PG-TDSON-8-6 - same | PG-TSDSON-8 - close |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| VDS max | 100 V | 100 V | 100 V | 100 V | 60 V | 60 V | 100 V |
| Technology | OptiMOS 5 (logic-level) | OptiMOS 5 (standard-level) | OptiMOS 5 (logic-level) | OptiMOS 5 (standard-level) | OptiMOS 5 (logic-level) | OptiMOS 5 (logic-level) | OptiMOS 3 (logic-level) |
| Gate Drive Level | Logic-level (typ. 1.7 V Vth) | Standard-level | Logic-level | Standard-level | Logic-level | Logic-level | Logic-level |
| RoHS Status | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
关键差异点
- OptiMOS 5 platform with best-in-class RDS(on) x Qg （对比 BSZ150N10LS3GATMA1 (OptiMOS 3))
- Logic-level VGS(th) eliminates gate driver requirement （对比 BSC118N10NSGATMA1 (standard-level))
- 100 V VDS class covers 48 V telecom and industrial buses with margin （对比 BSC027N06LS5ATMA1 (60 V))
设计说明
Estimated: at PD = 2.5 W on a standard 1 sq-in. JEDEC FR-4 2 oz copper pad, theta_JA is around 50 C/W, giving a 125 C junction temperature rise over ambient. For continuous 44 A operation at Tc = 25 C you must keep PCB dissipation well below 2.5 W; otherwise mount on a heatsink or use copper pour of at least 6 sq-cm with thermal vias. The Tc rating of 52 W assumes infinite heatsink; thermal design must combine RDS(on) loss and switching loss at your operating frequency.
Lay out the high-current loop (input cap to drain to source to input cap) as small as possible, ideally under 5 nH. Place the gate-drive return directly to the source sense pin to avoid parasitic inductance that can ring VGS during fast dV/dt events. Use a 4-layer PCB with continuous ground plane under the SuperSO8 footprint; stitch vias around the thermal pad with 0.3 mm drill on a 1.0 mm pitch grid.
Estimated: do not exceed VGS = ±20 V or risk oxide rupture; if your gate driver swings to 12 V or higher, add a 10 V Zener clamp on the gate. In high dV/dt switching applications always add a 10 kohm or larger gate-source resistor to hold the FET off during unexpected dv/dt-induced turn-on events. Do not use this part on 48 V rails without derating for transient overshoot - confirm worst-case bus spike stays below 80 V VDS for reliability margin.
The OptiMOS 5 process delivers low Qg, but at high switching frequencies the gate-charge current can still disturb shared gate-driver ground returns. Use a dedicated gate-drive return trace separate from the power source return; star-ground at the source sense pin. For paralleled MOSFETs, add individual 10-ohm gate resistors to suppress parasitic oscillation between devices. Use a ferrite bead on the gate if ringing exceeds 30 percent of VGS during turn-off.
合规信息
RoHS and REACH compliance per Infineon product page. Not AEC-Q100 qualified - this is a commercial/industrial MOSFET, not an automotive grade part. Halogen-free status not stated in provided data, set to unknown per data authenticity rules.
