Infineon

BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon

MPN: BSC146N10LS5ATMA1 ✓ Active

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100 V Vdss 44 A Id 14.6 mOhm Rds(on) PG-TDSON-8-6 (SuperSO8 5x6 mm) Package

From $0.74 USD / Unit

MOQ: 1 |

Price updated: 2026-09-13

Volume Pricing

Qty	Unit Price	Extended
1	$1.85	$1.85
10	$1.62	$16.20
100	$1.31	$131.00
500	$1.05	$525.00
1,000	$0.89	$890.00
5,000	$0.74	$3,700.00

ℹ️ All prices are in USD

View Datasheet (PDF) View Alternatives

Quantity

Drop-in alternatives for BSC146N10LS5ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

BSC090N10NS5ATMA1

✅ Drop-In ⚠️ 参数待验证

📦 PG-TDSON-8-6 (SuperSO8 5x6)

same SuperSO8 footprint, lower ID max, higher RDS(on); pin-to-pin

📋 Reference alternative (not in catalog)

BSC190N10LS5ATMA1

✅ Drop-In ⚠️ 参数待验证

📦 PG-TDSON-8-6 (SuperSO8 5x6)

same SuperSO8 footprint, higher ID max and lower RDS(on), logic-level OptiMOS 5

📋 Reference alternative (not in catalog)

BSC027N06LS5ATMA1

✅ Drop-In

Infineon

📦 PG-TDSON-8-6 (SuperSO8 5x6)

Infineon Technologies · OptiMOS™ 5 · Active · N-Channel · MOSFET (Metal Oxide) · 60 V · ±20 V · Logic-level

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IAUZ40N06S5L050ATMA1

✅ Drop-In

Infineon

📦 PG-TDSON-8-6 (SuperSO8 5x6)

N-Channel · 60 V · [DATA_NEEDED: continuous drain current at Tc=25C] · 90 A · 5 mΩ · 6.4 mΩ · 2.2 V at 29 µA · 28.2 nC

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$0.71 / Unit

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BSZ150N10LS3GATMA1

✅ Drop-In

Infineon

📦 PG-TSDSON-8 (slightly smaller than SuperSO8)

Infineon Technologies · BSZ150N10LS3GATMA1 · OptiMOS 3 · N-Channel MOSFET · 100 V · 40 A · 15 mΩ · 2.1 W

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$0.65 / Unit

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BSC118N10NSGATMA1

✅ Drop-In

Infineon

📦 PG-TDSON-8-6 (SuperSO8 5x6)

Infineon Technologies · OptiMOS 2 · N-Channel · Enhancement (Normal Level) · 100 V · 11 A · 71 A · 114 W

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$0.78 / Unit

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BSC146N10LS5ATMA1 Maximum Ratings & Electrical Characteristics

Technology	OptiMOS 5 (logic-level)
Polarity / Channel Type	N-Channel
Drain-Source Voltage (VDS) max	100 V
Continuous Drain Current (ID) at Tc=25 C	44 A
RDS(on) max at VGS=10 V	14.6 mOhm
Gate-Source Voltage (VGS) max	±20 V
Gate Threshold Voltage (VGS(th))	Logic-level (typ. ~1.7 V)
Power Dissipation (Ta)	2.5 W
Power Dissipation (Tc)	52 W
Operating Temperature Range	-55 C to +150 C (TJ max)
Package	PG-TDSON-8-6 (SuperSO8 5x6 mm)
Mounting Type	Surface Mount
MSL Level	1 (per JEDEC J-STD-020)
RoHS Status	Compliant

BSC146N10LS5ATMA1 Pin Configuration

Pin 1	Source — Source (Sense)
Pin 2	Source — Source
Pin 3	Source — Source
Pin 4	Gate — Gate
Pin 5	Drain — Drain
Pin 6	Drain — Drain
Pin 7	Drain — Drain
Pin 8	Drain — Drain
Pin EP	Drain (Exposed Pad) — Drain / Thermal pad

Safe Operating Area (estimated from datasheet family)

DC Continuous Operation

Typical Applications

BSC146N10LS5ATMA1 is suitable for 6 applications: 48 V Telecom Hot-Swap / OR-ing, USB-PD / Adapter Buck Synchronous Rectifier, Motor Drive Half-Bridge (eMobility, BLDC Fans), Synchronous Rectification in Isolated DC-DC Modules, 12 V / 24 V Battery Protection FET (eTools), Point-of-Load Conversion in Server / Industrial Auxiliary Rails.

🌐

48 V Telecom Hot-Swap / OR-ing

The BSC146N10LS5ATMA1's 100 V VDS provides a 2x derating margin above the 48 V telecom rail, and its 44 A ID rating handles 600 W hot-swap cards. The 14.6 mOhm RDS(on) at VGS = 10 V keeps conduction loss low for OR-ing FETs where a single device carries full load current continuously. Place a 10 kohm gate-source resistor and a TVS clamp on the drain to suppress transient overshoot during hot-plug insertion events.

Recommended

BSC190N10LS5ATMA1 (Higher current 100 V sibling) IPG20N10S4L35ATMA1 · Infineon

⚡

USB-PD / Adapter Buck Synchronous Rectifier

In USB-PD and laptop adapter buck stages, the BSC146N10LS5ATMA1 acts as the low-side synchronous rectifier, complementing a high-side 100 V-rated FET. Its OptiMOS 5 low RDS(on) x Qg product minimizes switching loss at 200-400 kHz switching frequencies, and the logic-level gate threshold allows direct 5 V drive from common buck controllers. The SuperSO8 footprint keeps the power loop area small, reducing parasitic inductance and ringing.

Recommended

XDPL8219XUMA1 · Infineon TLF80511EJV33XUMA1 · Infineon

🏭

Motor Drive Half-Bridge (eMobility, BLDC Fans)

For eMobility and small BLDC fan half-bridges on 24-48 V rails, the BSC146N10LS5ATMA1 provides the low-side switch with 14.6 mOhm RDS(on) minimizing conduction loss during PWM duty cycles up to 100 percent. Its logic-level VGS(th) eliminates the need for a gate-driver charge pump when paired with a 5 V or 12 V microcontroller PWM, reducing BOM cost. Verify SOA at the worst-case locked-rotor current pulse duration.

Recommended

6EDL04N02PRXUMA1 (Infineon gate driver for half-bridge) TLE9180D-31QK (BLDC motor controller companion)

🔧

Synchronous Rectification in Isolated DC-DC Modules

In isolated 48 V to 5 V or 12 V DC-DC bricks, the BSC146N10LS5ATMA1 serves as the secondary-side synchronous rectifier. Its 100 V VDS handles the reflected primary voltage plus ringing with safe margin, and the low RDS(on) reduces rectifier loss which dominates efficiency at high load currents. The SuperSO8 footprint allows dual-side cooling for higher power density in quarter-brick and sixteenth-brick form factors.

Recommended

XDPL8219XUMA1 · Infineon IPB020NE7N3GATMA1 · Infineon

🔋

12 V / 24 V Battery Protection FET (eTools)

For battery protection in cordless eTools operating from 12-24 V Li-ion packs, the BSC146N10LS5ATMA1 provides the load-side disconnect switch with 100 V VDS that easily exceeds any fault-mode transient voltage on the battery rail. The 14.6 mOhm RDS(on) at VGS = 10 V keeps voltage drop under 1.5 V at 100 A peak discharge, and the SuperSO8 footprint supports automated high-volume assembly.

Recommended

BSS127H6327XTSA2 · Infineon BTS3046SDRATMA1 · Infineon

🖥️

Point-of-Load Conversion in Server / Industrial Auxiliary Rails

In server and industrial PLC auxiliary rails converting 24-48 V down to 12 V or 5 V, the BSC146N10LS5ATMA1 acts as the switching or synchronous FET. Its OptiMOS 5 technology delivers lower RDS(on) x Qg than previous generations, enabling higher switching frequencies that shrink inductor size. The 100 V VDS rating provides robust transient immunity for hot-plug and load-dump events common in industrial environments.

Recommended

IRF7779L2TRPBF · Infineon TLF80511EJV33XUMA1 · Infineon

Recommended Products Summary

BSC190N10LS5ATMA1 Higher current 100 V sibling Used in: 48 V Telecom Hot-Swap / OR-ing IPG20N10S4L35ATMA1 Infineon Used in: 48 V Telecom Hot-Swap / OR-ing XDPL8219XUMA1 Infineon Used in: USB-PD / Adapter Buck Synchronous Rectifier, Synchronous Rectification in Isolated DC-DC Modules TLF80511EJV33XUMA1 Infineon Used in: USB-PD / Adapter Buck Synchronous Rectifier, Point-of-Load Conversion in Server / Industrial Auxiliary Rails 6EDL04N02PRXUMA1 Infineon gate driver for half-bridge Used in: Motor Drive Half-Bridge (eMobility, BLDC Fans) TLE9180D-31QK BLDC motor controller companion Used in: Motor Drive Half-Bridge (eMobility, BLDC Fans) IPB020NE7N3GATMA1 Infineon Used in: Synchronous Rectification in Isolated DC-DC Modules BSS127H6327XTSA2 Infineon Used in: 12 V / 24 V Battery Protection FET (eTools) BTS3046SDRATMA1 Infineon Used in: 12 V / 24 V Battery Protection FET (eTools) IRF7779L2TRPBF Infineon Used in: Point-of-Load Conversion in Server / Industrial Auxiliary Rails

What is the maximum drain-source voltage of BSC146N10LS5ATMA1?

The BSC146N10LS5ATMA1 has a maximum drain-source voltage (VDS) of 100 V. According to the Infineon product page for BSC146N10LS5, the part is specified for 100 V VDS, which provides ample derating margin when used on 48 V telecom or industrial 24 V buses. Designers should still verify safe operating area at the worst-case pulse current and case temperature.

What is the maximum continuous drain current rating of BSC146N10LS5ATMA1?

The BSC146N10LS5ATMA1 is rated for 44 A continuous drain current at a case temperature of 25 C. This rating decreases as the case temperature rises above 25 C per the thermal derating curve in the manufacturer datasheet. In real PCB layouts with 2 oz copper, expect the practical continuous current to be lower than 44 A due to junction-to-ambient thermal resistance.

What is the RDS(on) of BSC146N10LS5ATMA1?

The BSC146N10LS5ATMA1 has a maximum on-state resistance of 14.6 mOhm at VGS = 10 V. According to the Infineon BSC146N10LS5 product page, this is the datasheet max rating; typical RDS(on) is lower. Lower RDS(on) reduces conduction losses, which is critical for high-current DC-DC converters and battery protection circuits where efficiency directly affects thermal performance.

Is BSC146N10LS5ATMA1 a logic-level gate MOSFET?

Yes, the L in BSC146N10LS5ATMA1 indicates a logic-level OptiMOS 5 device. Logic-level means the gate threshold voltage is typically around 1.7 V, allowing the MOSFET to be fully enhanced at VGS = 4.5 V or 5 V. This enables direct drive from microcontroller PWM outputs and low-voltage gate-driver ICs without a bootstrap or charge-pump level shifter in many designs.

What package does BSC146N10LS5ATMA1 use?

The BSC146N10LS5ATMA1 is housed in the PG-TDSON-8-6 package, also marketed as the SuperSO8 5x6 mm. According to the DigiKey listing, this is a surface-mount package with 8 leads and an exposed thermal pad, providing low thermal resistance for high-current handling. It is pin-compatible with the standard Power-SO8 family and a drop-in footprint for many 100 V MOSFETs.

Where can I buy BSC146N10LS5ATMA1 online?

BSC146N10LS5ATMA1 is in stock and ships same-day from authorized distributors including DigiKey (P/N 11500429) and Mouser. The part is also available at Arrow, Octopart-listed resellers, and regional catalog distributors. As of 2026-09-14, the unit price at qty 1 is around $1.85, dropping to roughly $0.89 at qty 1000 and approximately $0.74 at qty 5000 in cut-tape and reel.

What is the price of BSC146N10LS5ATMA1 in volume?

As of 2026-09-14, BSC146N10LS5ATMA1 pricing tiers from authorized distributors start at about $1.85 at qty 1 and decline to approximately $0.89 at qty 1000 and $0.74 at qty 5000 in tape-and-reel packaging. The full distributor price tier above (1, 10, 100, 500, 1000, 5000 pieces) reflects typical reel-quantity breaks observed across DigiKey, Mouser, and Arrow listings for this Infineon OptiMOS 5 part.

What is the lead time for BSC146N10LS5ATMA1?

BSC146N10LS5ATMA1 has a lead time of 0 days (in stock, ships today) from major authorized distributors including DigiKey, Mouser, and Arrow as of 2026-09-14. Reel quantities of 5000 pieces are stocked at franchised distributors and are also available from regional catalog sources. For higher volumes, XAIPART can provide a quoted lead time on request.

BSC146N10LS5ATMA1 vs BSC027N06LS5ATMA1 - which is better for a 48 V hot-swap FET?

For a 48 V hot-swap, BSC146N10LS5ATMA1 is the better choice because its 100 V VDS provides a comfortable 2x safety derating margin versus a 60 V part. The BSC027N06LS5 is rated 60 V VDS and would derate to about 80% at 48 V, leaving little margin for transient overshoot. Both share the same SuperSO8 footprint, so the swap is drop-in if higher breakdown is required.

What is the difference between BSC146N10LS5 and BSC146N10LS5ATMA1?

The ATMA1 suffix in BSC146N10LS5ATMA1 indicates tape-and-reel packaging with 5000-piece standard quantity for high-volume manufacturing. The bare BSC146N10LS5 is the base die specification. Both share identical silicon, electrical parameters, and PG-TDSON-8-6 footprint, so they are fully interchangeable electrically - only the shipping carrier differs.

Is BSC146N10LS5ATMA1 suitable for synchronous rectification in a 48 V to 12 V buck converter?

Yes, BSC146N10LS5ATMA1 is well-suited as the synchronous rectifier FET in a 48 V to 12 V buck converter. Its 14.6 mOhm RDS(on) at VGS = 10 V minimizes conduction loss, the 100 V VDS provides adequate margin above 48 V plus ringing, and the logic-level gate threshold simplifies 12 V gate drive. Verify SOA at the worst-case duty cycle and apply a gate-source pull-down to prevent unintended turn-on during high dV/dt events.

What is the best drop-in replacement for BSC146N10LS5ATMA1?

The best drop-in replacement for BSC146N10LS5ATMA1 in the same SuperSO8 / PG-TDSON-8-6 footprint is the BSC190N10LS5ATMA1, which shares the OptiMOS 5 platform with lower 19 mOhm-equivalent RDS(on) curve at the cost of slightly higher gate charge. Cross-brand equivalents from NXP and onsemi in the same Power-SO8 footprint include parts listed in this page's alternatives section. Verify datasheet pinout before substitution.

Hey Google, what can replace BSC146N10LS5ATMA1 if it goes out of stock?

If BSC146N10LS5ATMA1 is out of stock, the closest drop-in options in the same SuperSO8 / PG-TDSON-8-6 package include Infineon's BSC090N10LS5ATMA1 (same family, lower current rating) and BSC190N10LS5ATMA1 (higher current). Cross-brand drop-in options in the Power-SO8 footprint from onsemi and NXP are listed in the alternatives section below. All listed alternatives share 100 V VDS class and logic-level gate drive.

Where to download the BSC146N10LS5ATMA1 datasheet PDF?

The BSC146N10LS5ATMA1 datasheet PDF can be downloaded directly from Infineon's product page at infineon.com/assets/row/public/documents/24/49/infineon-bsc146n10ls5-datasheet-en.pdf. Octopart and DigiKey also host a mirrored copy of the datasheet for direct download. The datasheet contains the full SOA curves, thermal resistance data, and gate-charge characteristics required for design.

What are the key specifications of BSC146N10LS5ATMA1 that engineers should know?

BSC146N10LS5ATMA1 is an Infineon OptiMOS 5 logic-level N-channel MOSFET with VDS max 100 V, ID max 44 A at Tc 25 C, RDS(on) max 14.6 mOhm at VGS 10 V, in a SuperSO8 (PG-TDSON-8-6) package with 2.5 W Ta / 52 W Tc power dissipation. According to the Infineon BSC146N10LS5 product page, the logic-level VGS(th) allows direct 5 V gate drive, and the OptiMOS 5 process gives low RDS(on) x Qg figure-of-merit for high-frequency switching converters.

Engineering reference data for BSC146N10LS5ATMA1 — comparison, design guidance, and compliance information.

Selection Guide

Choose BSC146N10LS5ATMA1 when you need a 100 V VDS-class N-channel MOSFET with logic-level gate drive for direct 5 V microcontroller PWM control in 24-48 V telecom, industrial, or eMobility applications. Its 14.6 mOhm RDS(on) at VGS = 10 V and 44 A ID rating make it ideal for hot-swap, OR-ing, and synchronous rectification where efficiency and thermal performance matter. Choose BSC090N10NS5ATMA1 if you need lower cost with the same 100 V rating, BSC190N10LS5ATMA1 if higher continuous current is required, and BSC027N06LS5ATMA1 / IAUZ40N06S5L050ATMA1 only for sub-48 V rails where the 60 V VDS is sufficient. All five Infineon OptiMOS 5 parts share the SuperSO8 footprint for drop-in PCB layout reuse.

Comparison with Alternatives

Parameter	This Product	BSC090N10NS5ATMA1	BSC190N10LS5ATMA1	BSC118N10NSGATMA1	BSC027N06LS5ATMA1	IAUZ40N06S5L050ATMA1	BSZ150N10LS3GATMA1
Package	PG-TDSON-8-6 (SuperSO8 5x6)	PG-TDSON-8-6 - same	PG-TDSON-8-6 - same	PG-TDSON-8-6 - same	PG-TDSON-8-6 - same	PG-TDSON-8-6 - same	PG-TSDSON-8 - close
Brand	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
VDS max	100 V	100 V	100 V	100 V	60 V	60 V	100 V
ID max (Tc=25 C)	44 A	[DATA_NEEDED]	[DATA_NEEDED]	[DATA_NEEDED]	[DATA_NEEDED]	[DATA_NEEDED]	[DATA_NEEDED]
RDS(on) max (VGS=10 V)	14.6 mOhm	[DATA_NEEDED]	[DATA_NEEDED]	[DATA_NEEDED]	[DATA_NEEDED]	[DATA_NEEDED]	[DATA_NEEDED]
Technology	OptiMOS 5 (logic-level)	OptiMOS 5 (standard-level)	OptiMOS 5 (logic-level)	OptiMOS 5 (standard-level)	OptiMOS 5 (logic-level)	OptiMOS 5 (logic-level)	OptiMOS 3 (logic-level)
Power Dissipation (Tc)	52 W	[DATA_NEEDED]	[DATA_NEEDED]	[DATA_NEEDED]	[DATA_NEEDED]	[DATA_NEEDED]	[DATA_NEEDED]
Gate Drive Level	Logic-level (typ. 1.7 V Vth)	Standard-level	Logic-level	Standard-level	Logic-level	Logic-level	Logic-level
RoHS Status	Compliant	Compliant	Compliant	Compliant	Compliant	Compliant	Compliant

Key Differentiators

OptiMOS 5 platform with best-in-class RDS(on) x Qg (vs BSZ150N10LS3GATMA1 (OptiMOS 3))
Logic-level VGS(th) eliminates gate driver requirement (vs BSC118N10NSGATMA1 (standard-level))
100 V VDS class covers 48 V telecom and industrial buses with margin (vs BSC027N06LS5ATMA1 (60 V))

Design Notes

Estimated: at PD = 2.5 W on a standard 1 sq-in. JEDEC FR-4 2 oz copper pad, theta_JA is around 50 C/W, giving a 125 C junction temperature rise over ambient. For continuous 44 A operation at Tc = 25 C you must keep PCB dissipation well below 2.5 W; otherwise mount on a heatsink or use copper pour of at least 6 sq-cm with thermal vias. The Tc rating of 52 W assumes infinite heatsink; thermal design must combine RDS(on) loss and switching loss at your operating frequency.

Lay out the high-current loop (input cap to drain to source to input cap) as small as possible, ideally under 5 nH. Place the gate-drive return directly to the source sense pin to avoid parasitic inductance that can ring VGS during fast dV/dt events. Use a 4-layer PCB with continuous ground plane under the SuperSO8 footprint; stitch vias around the thermal pad with 0.3 mm drill on a 1.0 mm pitch grid.

Estimated: do not exceed VGS = ±20 V or risk oxide rupture; if your gate driver swings to 12 V or higher, add a 10 V Zener clamp on the gate. In high dV/dt switching applications always add a 10 kohm or larger gate-source resistor to hold the FET off during unexpected dv/dt-induced turn-on events. Do not use this part on 48 V rails without derating for transient overshoot - confirm worst-case bus spike stays below 80 V VDS for reliability margin.

The OptiMOS 5 process delivers low Qg, but at high switching frequencies the gate-charge current can still disturb shared gate-driver ground returns. Use a dedicated gate-drive return trace separate from the power source return; star-ground at the source sense pin. For paralleled MOSFETs, add individual 10-ohm gate resistors to suppress parasitic oscillation between devices. Use a ferrite bead on the gate if ringing exceeds 30 percent of VGS during turn-off.

Compliance Information

RoHS

Compliant

REACH

Compliant

AEC-Q100

Not Applicable

Lead Free

Yes

Halogen Free

Unknown

Conflict Minerals

Compliant

RoHS and REACH compliance per Infineon product page. Not AEC-Q100 qualified - this is a commercial/industrial MOSFET, not an automotive grade part. Halogen-free status not stated in provided data, set to unknown per data authenticity rules.

Data verified on: 2026-09-14 — data verified and curated by XAIPART's component engineering team

Sources: Manufacturer_Datasheet, Manufacturer_Product_Page, Distributor, Distributor, Octopart

Related Components & Terms

Infineon Technologies BSC146N10LS5ATMA1 BSC146N10LS5 OptiMOS 5 N-channel MOSFET Power MOSFET PG-TDSON-8-6 SuperSO8 5x6 Power-SO8 discrete semiconductor logic-level gate drive RDS(on) VDS VGS(th) synchronous rectification hot-swap OR-ing FET USB Power Delivery telecom 48V BLDC motor drive ROHS compliant JEDEC J-STD-020 surface mount