BSS806NH6327XTSA1 - 20V N-Ch OptiMOS 2 MOSFET, SOT-23 | Infineon
料号： BSS806NH6327XTSA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0.53 | $0.53 |
| 10 | $0.47 | $4.70 |
| 100 | $0.38 | $38.00 |
| 500 | $0.31 | $155.00 |
| 1,000 | $0.24 | $240.00 |
| 3,000 | $0.19 | $570.00 |
BSS806NH6327XTSA1 概述
A small-signal N-channel MOSFET in SOT-23 belongs to the discrete semiconductor family tree: MOSFET -> FET -> transistor -> discrete semiconductor. Within that taxonomy the OptiMOS™ 2 line is Infineon's 20 V-class trench-generation platform that replaced the older OptiMOS™ generation with lower gate charge, lower RDS(on), and tighter logic-level drive thresholds. This device is rated "ultra-logic level" (1.8 V Vgs(th) rated), which means a 1.8 V GPIO from a microcontroller, a coin-cell cell, or a small PMIC can drive the gate directly without a charge pump or level shifter.
Key features include a 20 V drain-source breakdown, 2.3 A continuous ID (Ta), 57 mΩ maximum RDS(on) at VGS=4.5 V, ultra-low gate charge (typical Qg ≈ 2.5 nC for this generation), and an avalanche-rated body diode qualified to AEC-Q101 for automotive use. The PG-SOT23 footprint uses a center pin 2 that is internally bonded to the die pad, giving designers a low-inductance source return when the center pad is soldered to a small copper pour.
Typical applications include DC-DC converter synchronous rectifiers, USB load switches, battery protection circuits, motor driver low-side switches, and LED backlight drivers. Because the part is AEC-Q101 qualified, it is also suitable for 12 V automotive body-electronics loads such as door modules and small sensor switches.
When designing with this device, gate-drive strength matters: a 1 kΩ gate resistor with a 10 kΩ pull-down keeps the FET off during MCU reset. For switching-converter use, keep the switching-node loop (Drain -> L -> Drain) under 5 mm to control ringing on the 20 V rating headroom.
直接替换替代料： BSS806NH6327XTSA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： BSS806NH6327XTSA1 （相同外形与封装尺寸） ——差异在于 Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, Continuous Drain Current (ID).
快速对比工具——选择替代料号进行并排对比：
BSS806NEH6327XTSA1
✅ 直接替换✓ 有现货
$0.14 / 个
查看数据手册 →BSS816NWH6327XTSA1
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$0.14 / 个
查看数据手册 →NTR4101PT1G
✅ 直接替换📋 参考替代料（不在目录中）
Si2302CDS-T1-GE3
✅ 直接替换📋 参考替代料（不在目录中）
DMG2302UX-7
✅ 直接替换📋 参考替代料（不在目录中）
BSS806NH6327XTSA1 最大额定值与电气特性
| FET Type | N-Channel |
| Technology | OptiMOS 2 (trench MOSFET) |
| Drain-Source Voltage (VDS) | 20 V |
| Continuous Drain Current (ID, Ta) | 2.3 A |
| Drain-Source On-Resistance (RDS(on) max) | 57 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | 1.8 V rated (logic level) |
| Gate Drive (recommended VGS) | 1.8 V to 10 V |
| Power Dissipation (PD, Ta) | 500 mW |
| 工作温度范围 | -55 C to +150 C (junction) |
| 封装 | PG-SOT23-3 (SOT-23-3) |
| 安装类型 | Surface Mount |
| MSL 等级 | 1 (per JEDEC J-STD-020) |
| RoHS 状态 | Compliant (Pb-free plating) |
| Automotive Qualification | AEC-Q101 qualified |
BSS806NH6327XTSA1 引脚配置
| 引脚 1 | Gate (G) — Gate drive input; logic-level, 1.8 V VGS(th) rated |
| 引脚 2 | Source (S) — Source connection; internally bonded to the die pad for thermal dissipation |
| 引脚 3 | Drain (D) — Drain connection; load switching node |
安全工作区 (DC, TA=25C)
典型应用
BSS806NH6327XTSA1 适用于 6 应用s: USB VBUS Load Switch, DC-DC Synchronous Rectifier, Single-Cell Li-Ion Battery Protection, Automotive 12V Body Electronics Load Driver, LED Backlight / Camera Flash Driver Switch, Low-Side Solenoid / Relay Driver.
USB VBUS Load Switch
The BSS806NH6327XTSA1 fits USB VBUS load-switch positions because its 20 V VDS comfortably exceeds the 5 V USB rail with hot-plug transient headroom, while the 57 mΩ RDS(on) at VGS=4.5 V limits continuous dissipation to about 0.17 W at a USB 3.0 worst-case 1.7 A load. The 1.8 V logic-level VGS(th) means a 3.3 V GPIO can drive the gate directly, removing the need for a charge pump. Used between the 5 V regulator output and the USB connector VBUS pin with a 100 kΩ gate pull-down so the load defaults OFF during MCU reset, the BSS806N adds clean, low-loss power gating without the BOM cost of a dedicated load-switch IC. Compared with the legacy 2N7002, the BSS806N cuts conduction loss by more than 100x in this position.
推荐
DC-DC Synchronous Rectifier
The BSS806NH6327XTSA1 is well matched to the low-side synchronous rectifier position in 5 V to 3.3 V buck converters up to about 2 A. Its 20 V VDS handles 5 V input plus switching spike headroom, and the 57 mΩ RDS(on) at 4.5 V gate keeps synchronous-rectifier conduction loss below 0.23 W at 2 A - small enough that the SOT-23 package stays within its 500 mW rating on 1 oz copper with a small thermal via array. The low gate charge of the OptiMOS 2 die (typical Qg ≈ 2.5 nC for this generation) keeps switching losses low at 500 kHz, allowing >90% efficiency in single-cell Li-ion buck designs. Tie the gate to the controller's low-side drive output through a 10 Ω resistor to control ringing.
推荐
Single-Cell Li-Ion Battery Protection
The BSS806NH6327XTSA1 suits the low-side FET position in 1-cell Li-ion battery protection circuits where a 20 V VDS rating is more than enough headroom for a 4.2 V full-charge pack. The 2.3 A continuous ID rating handles typical smartphone and IoT discharge currents (up to 1.5 A sustained), while the 57 mΩ RDS(on) keeps voltage drop below 90 mV at 1.5 A. The AEC-Q101 qualification supports designs that must survive automotive-grade reliability stress. Place two BSS806N FETs back-to-back (one in the charge path, one in the discharge path) for a classic two-FET protection topology with minimal conduction loss.
推荐
Automotive 12V Body Electronics Load Driver
AEC-Q101 automotive qualification makes the BSS806NH6327XTSA1 a fit for 12 V automotive body-electronics loads - door modules, seat controllers, mirror adjusters, and small sensor switches. Its 20 V VDS handles the 12 V bus plus load-dump transients up to about 16 V (with external TVS protection), and the 57 mΩ RDS(on) at 4.5 V gate keeps dissipation under 0.6 W at a 3 A peak body-load pulse. Pair the BSS806N with a small MCU GPIO through a 1 kΩ gate resistor; the logic-level 1.8 V threshold ensures clean turn-on from 3.3 V microcontrollers. For wiper or seat motors above 3 A continuous, choose a larger package such as DPAK instead.
推荐
LED Backlight / Camera Flash Driver Switch
The BSS806NH6327XTSA1 serves well as the low-side PWM switch in LED backlight drivers and small camera-flash circuits. Its 57 mΩ RDS(on) at 4.5 V gate keeps the on-state voltage drop below 100 mV at 1.5 A LED current, so most of the supply voltage reaches the LED string for maximum brightness. The 1.8 V logic-level threshold means a 3.3 V PWM GPIO can switch the gate directly at audio and visual refresh rates without a driver stage. At 20 V VDS, the part handles LED stacks up to 4 white LEDs in series from a 12 V rail with comfortable headroom for inductor flyback transients.
推荐
Low-Side Solenoid / Relay Driver
The BSS806NH6327XTSA1 fits low-side solenoid and small relay driver positions in industrial control and white-goods designs. Its 2.3 A continuous drain current handles small 12 V/24 V relays and proportional solenoids below 2 A, and the 20 V VDS provides solid transient headroom for the flyback spike when the inductor de-energizes (paired with a flyback diode). The logic-level 1.8 V VGS(th) lets a 3.3 V or 5 V MCU GPIO drive the gate directly, eliminating the need for a discrete bipolar driver stage. For inductive kickback protection, place a 1N4148 or Schottky diode across the coil and keep the diode loop tight to the drain pin.
推荐
推荐产品汇总
工程参考数据： BSS806NH6327XTSA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | BSS806NEH6327XTSA1 | BSS816NWH6327XTSA1 | NTR4101PT1G | Si2302CDS-T1-GE3 | DMG2302UX-7 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon (same) | Infineon (same) | onsemi | Vishay Intertechnology | Diodes Incorporated |
| Package | PG-SOT23-3 | PG-SOT23-3 (same) | PG-SOT23-3 (same) | SOT-23-3 (same) | SOT-23-3 (same) | SOT-23-3 (same) |
| VDS (V) | 20 V | 20 V | 20 V | 20 V | 20 V | 20 V |
| Continuous ID (A) | 2.3 A | 2.3 A | 2.6 A | 2.6 A | 2.6 A | 2.4 A |
| RDS(on) max @ 4.5V (mΩ) | 57 mΩ | 57 mΩ | ~40 mΩ | ~50 mΩ | ~52 mΩ | ~63 mΩ |
| VGS(th) logic-level | 1.8 V rated | 1.8 V rated | 1.8 V rated | 1.5 V rated | 1.5 V rated | 1.5 V rated |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | No |
| PD (mW @ TA=25C) | 500 mW | 500 mW | 500 mW | 480 mW | 500 mW | 780 mW |
关键差异点
- Lower on-resistance per dollar than legacy 2N7002 （对比 ON Semiconductor 2N7002)
- AEC-Q101 automotive qualification in same SOT-23 package （对比 DMG2302UX-7 (Diodes Incorporated))
- Same-family upgrade path within the same footprint （对比 BSS816NWH6327XTSA1)
设计说明
Estimated: at TA=25 C, ID=1.5 A continuous, and RDS(on)=57 mΩ, conduction dissipation is roughly 0.13 W. The PG-SOT23-3 package has a typical theta_JA around 250 C/W on a 1 oz FR-4 board without thermal vias, which yields a junction-temperature rise of about 32 C above ambient - well within the 150 C junction limit. For designs pushing 2 A continuous, add an array of 4-6 thermal vias under the center source pin (pin 2) to drop theta_JA toward 180 C/W and keep Tj rise below 50 C. Always derate to a maximum junction of 125 C for AEC-Q101 automotive designs, not the absolute 150 C rating.
Keep the high-current drain loop (Drain -> load -> Source) area under 5 mm² to minimize parasitic inductance that couples ringing into the 20 V VDS rating. Place a 100 kΩ gate-source pull-down resistor within 2 mm of the gate pin to ensure the FET stays OFF during MCU reset or floating-GP conditions. For switching applications above 100 kHz, route the gate drive trace away from the drain node and add a 10 Ω series gate resistor to dampen ringing. The center pin (Pin 2) is the source and is internally bonded to the die pad - always solder this pin to a copper pour for lowest thermal resistance.
Do not exceed 20 V VDS - even transient load-dump spikes on 12 V automotive rails can exceed 20 V without TVS clamping, so add an SMBJ16A or similar transient suppressor for 12 V bus designs. The 1.8 V logic-level VGS(th) means a 1.8 V GPIO is at the very edge of guaranteed turn-on; for production margin, drive the gate to at least 2.5 V. Avoid daisy-chaining multiple BSS806N FETs in parallel without individual gate resistors - the positive temperature coefficient of RDS(on) helps thermal stability, but unmatched gate thresholds can cause current hogging above 1 A per device.
合规信息
RoHS compliant with Pb-free lead plating per Infineon datasheet. AEC-Q101 qualified for automotive applications per Infineon OptiMOS 2 datasheet family. Halogen-free per JEDEC JS709B declaration. Note: AEC-Q101 (automotive discrete) is the correct qualification standard for this MOSFET, not AEC-Q100 (automotive IC).
