BSS806NH6327XTSA1 vs BSS306NH6327XTSA1 对比

详细并排对比 BSS806NH6327XTSA1 出自 Infineon 和 BSS306NH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSS806NH6327XTSA1 BSS806NH6327XTSA1 - 20V N-Ch OptiMOS 2 MOSFET, SOT-23 | Infineon

BSS806NH6327XTSA1 - 20V N-Ch OptiMOS 2 MOSFET, SOT-23 | Infineon

BSS806NH6327XTSA1 ✓ 量产中
Infineon
BSS306NH6327XTSA1 BSS306NH6327XTSA1 - 30V 2.3A N-Ch OptiMOS MOSFET | Infineon

BSS306NH6327XTSA1 - 30V 2.3A N-Ch OptiMOS MOSFET | Infineon

BSS306NH6327XTSA1 ✓ 量产中

规格对比

参数 BSS806NH6327XTSA1 BSS306NH6327XTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.19 $0.14
FET Type N-Channel N-Channel
Technology OptiMOS 2 (trench MOSFET) MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) 20 V 30 V
Continuous Drain Current (ID, Ta) 2.3 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Drain-Source On-Resistance (RDS(on) max) 57 mΩ —
Gate-Source Threshold Voltage (VGS(th)) 1.8 V rated (logic level) —
Gate Drive (recommended VGS) 1.8 V to 10 V —
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg] —
Power Dissipation (PD, Ta) 500 mW —
工作温度范围 -55 C to +150 C (junction) —
封装 PG-SOT23-3 (SOT-23-3) SOT-23 (PG-SOT23), 3-pin
安装类型 Surface Mount Surface Mount
MSL 等级 1 (per JEDEC J-STD-020) —
RoHS 状态 Compliant (Pb-free plating) —
Automotive Qualification AEC-Q101 qualified —
Manufacturer — Infineon Technologies
Part Number — BSS306NH6327XTSA1
Part Family — BSS306N (OptiMOS Small Signal)
Continuous Drain Current (ID) — 2.3 A (Ta)
Power Dissipation (PD) — 500 mW (Ta)
RDS(on) max — [DATA_NEEDED: exact RDS(on) max value in mΩ]
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max in V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) in V]
工作温度 — -55°C to +150°C (TJ)
Qualification — AEC-Q101 (Automotive)
Lead Plating — Pb-free (RoHS compliant)
Configuration — Single N-Channel, 3-pin

数据手册与资源

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