CY14B101KA-SP45XI - 1Mbit nvSRAM 45ns with RTC | Infineon
料号： CY14B101KA-SP45XI ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $23.99 | $23.99 |
| 10 | $22.79 | $227.90 |
| 100 | $21.11 | $2,111.00 |
| 500 | $19.19 | $9,595.00 |
| 1,000 | $17.27 | $17,270.00 |
CY14B101KA-SP45XI 概述
An nvSRAM (nonvolatile static RAM) is a memory device that combines the fast, unlimited read/write endurance of conventional SRAM with the nonvolatility of EEPROM or Flash. In the memory hierarchy, it sits above standard SRAM (which loses data at power-off) and below battery-backed SRAM solutions (which require cells and maintenance), making it part of the broader nonvolatile semiconductor memory family alongside FRAM, MRAM, and Flash.
Key features include QuantumTrap nonvolatile element technology, which Infineon describes as producing the world's most reliable nonvolatile memory; infinite SRAM read and write cycles; independent nonvolatile storage that resides in quantum trap cells; and an integrated real-time clock in the same monolithic IC, eliminating a separate RTC chip and its battery-backup circuitry in many designs.
Technically, the device operates as standard asynchronous SRAM until a store operation transfers SRAM contents into the nonvolatile elements, either automatically (on power loss) or under software/hardware control. A recall operation restores data from the nonvolatile elements back to SRAM at power-up. The 45 ns access time supports zero-wait-state operation with many microprocessors and FPGAs on a parallel address/data bus.
Typical applications include industrial data loggers, PLCs and factory automation equipment, metering systems requiring event and time stamping via the RTC, and networking or telecom equipment storing configuration and event data that must survive abrupt power failures.
Design consideration: budget the nonvolatile store cycle time (tSTORE) into your system timing, since the device is busy during a store operation, and ensure the power supply supervisor triggers auto-store before VDD falls below the minimum level.
This page synthesizes distributor pricing, drop-in alternative analysis, and practical design notes not found in the manufacturer datasheet, with all specifications traceable to the Infineon/Cypress datasheet and distributor listings as of 2026-09-13.
直接替换替代料： CY14B101KA-SP45XI ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
CY14B101KA-SP25XI
✅ 直接替换📋 参考替代料（不在目录中）
CY14B101KA-SP45XI 规格参数
| 存储器类型 | nvSRAM (Non-Volatile SRAM) with Real-Time Clock |
| Memory Organization | 128K x 8 |
| Memory Density | 1 Mbit (1049 kbits) |
| Access Time | 45 ns |
| 电源电压 | 3 V |
| 接口 | Parallel |
| SRAM Read/Write Endurance | Unlimited (infinite) |
| Nonvolatile Technology | QuantumTrap |
| Integrated RTC | Yes (full-featured real-time clock) |
| Temperature Grade | Industrial (-40C to +85C) |
| 封装 | 48-SSOP (0.300 inch, MO-119) |
| 安装类型 | Surface Mount |
| RoHS 状态 | Compliant |
CY14B101KA-SP45XI 48-ssop (0.300 inch, mo-119) 引脚配置指南
CY14B101KA-SP45XI（48-ssop (0.300 inch, mo-119) 封装）的引脚配置。 引脚编号、功能和连接图在制造商数据手册中定义。请参阅该手册以了解确切的封装尺寸和焊接指南。
暂无详细引脚数据： CY14B101KA-SP45XI.
请参阅 数据手册 以查看完整引脚配置。
典型应用
CY14B101KA-SP45XI 适用于 6 应用s: Industrial Data Logging, PLC and Factory Automation, Utility Metering and Smart Grid, Networking and Telecom Equipment, Medical Device Configuration Storage, Test and Measurement Instrumentation.
Industrial Data Logging
The CY14B101KA-SP45XI fits industrial data loggers because its SRAM core accepts unlimited high-frequency write bursts while the QuantumTrap elements commit the log automatically on power loss - something EEPROM and Flash cannot do without wear-leveling overhead. The 45 ns access time supports zero-wait-state writes from microcontrollers, and the industrial -40C to +85C grade covers unconditioned factory environments. The 128K x 8 array stores tens of thousands of log records between downloads. Designers should place the auto-store capacitor per the datasheet and trigger software stores during planned shutdowns for maximum data safety.
推荐
PLC and Factory Automation
Programmable logic controllers need retention of ladder programs, retentive data registers, and fault histories across power cycles. The CY14B101KA-SP45XI serves as a single-chip substitute for battery-backed SRAM modules: 1 Mbit of 45 ns SRAM with automatic nonvolatile backup and no battery to service. The integrated RTC timestamps faults and shift data without a separate clock chip. Its 3V operation matches modern 3.3V logic buses directly. Because SRAM endurance is unlimited, the retentive register file can be rewritten every scan cycle for the life of the equipment without degradation.
推荐
Utility Metering and Smart Grid
Electricity and water meters must preserve billing registers, load profiles, and tamper events through outages and battery removal. The CY14B101KA-SP45XI combines 1 Mbit of nonvolatile storage with a full-featured real-time clock in one monolithic IC, directly addressing time-of-use tariff recording. The auto-store function writes SRAM contents to QuantumTrap elements on power fail, ensuring register integrity during brownouts. The industrial temperature range suits outdoor meter enclosures. Designers should budget the store cycle into the power-fail sequence, triggering store when the supply supervisor asserts before VDD collapses.
推荐
Networking and Telecom Equipment
Routers, switches, and line cards store configuration, MAC/address tables, and event logs that must survive both graceful reboots and power interruptions. The 45 ns parallel interface of the CY14B101KA-SP45XI attaches directly to CPU local buses without wait states, and unlimited write endurance supports frequent table updates that would exhaust Flash or EEPROM. The RTC provides log timestamps for diagnostics. At 3V supply it integrates cleanly into 3.3V backplane designs. For high-speed 25 ns bus systems, the CY14B101KA-SP25XI variant offers the same footprint with faster timing.
推荐
Medical Device Configuration Storage
Infusion pumps, patient monitors, and diagnostic instruments require calibration constants, user settings, and audit trails that persist across power cycles and must never be lost mid-write. The CY14B101KA-SP45XI provides SRAM-speed configuration updates with automatic nonvolatile commit, eliminating battery-backed SRAM maintenance in medical service schedules. The integrated RTC supports audit timestamps required by device logs. The industrial temperature grade comfortably covers clinical environments. Verify the store/recall timing against the device power-fail sequence during design verification, and log store events as part of the audit record.
推荐
Test and Measurement Instrumentation
Bench instruments and data acquisition systems store instrument state, calibration data, and captured waveforms between sessions. The CY14B101KA-SP45XI offers 45 ns access for fast parameter storage during measurement bursts and unlimited endurance for frequent state saves, while the RTC timestamps calibration events for traceability. QuantumTrap auto-store protects the last measurement context if mains power fails. The 48-SSOP footprint integrates into compact main boards without battery holders. For designs referencing this device, XAIPART also stocks FPGA and CPLD families suitable for the acquisition front ends.
推荐
推荐产品汇总
工程参考数据： CY14B101KA-SP45XI ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | CY14B101KA-SP25XI |
|---|---|---|
| Package | 48-SSOP (0.300 in, MO-119) | 48-SSOP (0.300 in, MO-119) - same |
| Brand | Infineon (Cypress) | Infineon (Cypress) - same |
| Access Time | 45 ns | 25 ns |
| Memory Organization | 128K x 8 | 128K x 8 |
| Density | 1 Mbit | 1 Mbit |
| Supply Voltage | 3 V | 3 V |
| Real-Time Clock | Yes | Yes |
| Temperature Grade | Industrial (-40C to +85C) | Industrial (-40C to +85C) |
| Nonvolatile Technology | QuantumTrap | QuantumTrap |
关键差异点
- Integrated real-time clock eliminates a separate RTC IC and its backup circuitry （对比 CY14B101KA-SP25XI)
- Unlimited SRAM endurance with nonvolatile backup （对比 EEPROM/Flash of similar density)
- 45 ns grade offers lower cost at relaxed timing （对比 CY14B101KA-SP25XI)
设计说明
Nonvolatile data integrity depends on detecting power failure early enough to complete the auto-store operation. Use a supply supervisor that asserts hardware STORE well before VDD reaches the minimum operating level specified in the datasheet, and size the reservoir capacitance on the 3V rail so the device can finish the tSTORE cycle during the brownout. For planned shutdowns, issue a software STORE command first; this is the most deterministic path and is recommended in the manufacturer datasheet as the primary protection mechanism.
The device is busy and will not respond to read or write cycles during a store or recall operation. Systems that poll memory immediately after power-up or immediately after triggering a software store will see erroneous bus behavior. Insert the datasheet-specified delay after power-up recall completes before the first access, and treat tSTORE as a blocking interval in your firmware. Also note that RTC registers are accessed through dedicated control sequences - do not assume standard SRAM addressing applies to them.
Keep the 45 ns parallel address/data bus traces short and length-matched where practical; at these speeds ringing and reflections are minor but stubs on address lines can still cause marginal timing at industrial temperature extremes. Decouple VDD with a 0.1 uF ceramic capacitor placed within a few millimeters of the package, plus bulk capacitance sized for the store-event current transient. Follow the land pattern for the 48-SSOP 0.300-inch (MO-119) body exactly to avoid solder bridging on the 1.27 mm pin pitch.
合规信息
Package described as RoHS compliant SOIC 0.300 inch (MO-119) in part databases. REACH, halogen-free, and conflict-minerals declarations should be obtained from Infineon's compliance portal.
