CY14B101KA-SP45XI - 1Mb nvSRAM 45ns with RTC | Infineon
MPN: CY14B101KA-SP45XI β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $23.99 | $23.99 |
| 10 | $22.5 | $225.00 |
| 100 | $20.8 | $2,080.00 |
| 500 | $19.5 | $9,750.00 |
| 1,000 | $18.2 | $18,200.00 |
CY14B101KA-SP45XI Overview
An nvSRAM is a memory IC that combines two functional elements in the same physical cell: a standard SRAM cell for fast read and write operations and a nonvolatile QuantumTrap element that automatically stores SRAM data on power loss. Unlike EEPROM or Flash, nvSRAM supports unlimited SRAM read/write cycles while independent nonvolatile data resides in the QuantumTrap cells, eliminating the write-cycle and wear-out limitations of conventional nonvolatile memories.
Key features include 1-Mbit nonvolatile static RAM organized as 128K x 8, an embedded real-time clock with alarm and backup power capability, automatic STORE and RECALL operations on power failure, and a parallel SRAM interface with 45 ns access time that requires no software protocol overhead. The QuantumTrap technology produces highly reliable nonvolatile storage with immediate, non-blocking store operations. Industrial temperature operation (-40C to +85C, indicated by the I in the ordering code) supports harsh environments.
Technically, the device pairs a fast asynchronous SRAM array with hidden nonvolatile capture cells. On power failure, data is automatically transferred from SRAM to the nonvolatile cells using charge harvested from the decaying supply, requiring no external intervention. On power-up, a RECALL operation restores data to the SRAM array before the device is made available, guaranteeing data integrity through uncontrolled brownouts.
Typical applications include industrial programmable logic controllers (PLCs) storing process state, point-of-sale and transaction terminals buffering data during outages, metering systems logging usage with timestamped RTC entries, and networking equipment retaining configuration tables across power cycles.
A key design consideration: the RTC backup requires a properly sized backup source per the manufacturer datasheet, and designers must respect the STORE cycle endurance and tSTORE timing in power-fail detection circuits.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for CY14B101KA-SP45XI β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
CY14B101KA-SP25XI
β Drop-Inπ Reference alternative (not in catalog)
CY14B101KA-SP45XIT
β Drop-Inπ Reference alternative (not in catalog)
CY14B101MA-SP45XI
β Drop-Inπ Reference alternative (not in catalog)
CY14B101MA-SP25XI
β Drop-Inπ Reference alternative (not in catalog)
CY14B101KA-SP45XI Maximum Ratings & Electrical Characteristics
| Memory Type | nvSRAM (Nonvolatile SRAM) |
| Memory Size | 1 Mbit |
| Organization | 128K x 8 |
| Access Time | 45 ns |
| Supply Voltage | 3 V |
| Interface | Parallel |
| Real-Time Clock | Yes (full-featured RTC with alarm) |
| Nonvolatile Technology | QuantumTrap |
| Read/Write Endurance | Unlimited SRAM read/write cycles |
| Automatic Store/Recall | Yes, on power failure and power-up |
| Operating Temperature | -40C to +85C (Industrial) |
| Package | 48-SSOP (SOIC 0.300 inch, MO-119 family) |
| Mounting Type | Surface Mount |
| Pins | 48 |
| RoHS Status | Compliant |
| Manufacturer Part Number Suffix Decoding | SP = 48-SSOP, 45 = 45 ns, X = RoHS, I = Industrial |
CY14B101KA-SP45XI 48-ssop (soic 0.300 inch, mo-119 family) Pin Configuration Guide
Pin configuration for CY14B101KA-SP45XI (48-ssop (soic 0.300 inch, mo-119 family) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for CY14B101KA-SP45XI.
Refer to the datasheet for full pin configuration.
Typical Applications
CY14B101KA-SP45XI is suitable for 6 applications: Industrial PLC State Retention, Smart Metering Data Logging, Point-of-Sale and Transaction Terminals, Networking Equipment Configuration Storage, Medical Device Calibration Storage, Security and Access Control Systems.
Industrial PLC State Retention
Programmable logic controllers must restore counters, latches, and process state instantly after a power interruption. The CY14B101KA-SP45XI fits this role because its QuantumTrap nvSRAM automatically stores the full 128K x 8 array on power failure and recalls it on power-up, with no software protocol and unlimited SRAM write endurance for constantly updating state variables. Placed directly on the microcontroller parallel bus, its 45 ns access time keeps zero-wait-state reads and writes, unlike Flash where logging writes stall the CPU. The industrial -40C to +85C rating matches cabinet environments, and the integrated RTC timestamps fault events without a separate clock chip.
Recommended
Smart Metering Data Logging
Electricity, water, and gas meters log usage profiles that must survive outages and tampering. The CY14B101KA-SP45XI provides 1 Mbit of nonvolatile storage with automatic power-fail STORE, so a logged profile is preserved even during brownouts without battery-dependent retention. Its integrated RTC with alarm enables timestamped tariff periods and event records in a single monolithic IC, reducing BOM cost versus a separate RTC plus Flash. Because metering writes small records continuously, the unlimited SRAM write endurance is decisive: Flash-based loggers wear out, while the nvSRAM SRAM plane endures unlimited writes. The 3V supply suits battery-assist meter front ends, and 45 ns access keeps logging overhead negligible.
Recommended
Point-of-Sale and Transaction Terminals
POS terminals must never lose an in-progress transaction when power is cut. The CY14B101KA-SP45XI buffers transaction records in SRAM at full bus speed and commits them to nonvolatile QuantumTrap cells automatically during the power-fail window, guaranteeing recovery without software checkpointing. The 128K x 8 capacity holds thousands of buffered records, and 45 ns parallel access adds no latency to receipt printing or display updates. The RTC timestamps each transaction for audit trails. Compared with battery-backed SRAM, the monolithic solution removes battery replacement service visits, and compared with Flash journals, it eliminates erase-latency stalls during peak checkout loads at retail counters.
Recommended
Networking Equipment Configuration Storage
Routers, switches, and industrial gateways store configuration tables, MAC address tables, and firewall rules that must reappear instantly after reboot. The CY14B101KA-SP45XI retains this data through power cycles with automatic RECALL completing before the device is released to the bus, so the CPU reads valid configuration on the first access. The 45 ns asynchronous parallel interface connects directly to network processor buses without controllers or drivers required by SPI Flash. Unlimited write endurance supports frequent dynamic table updates. The integrated RTC provides time-stamping for logs and certificates. Industrial temperature rating suits unventilated telecom cabinets operating from -40C to +85C ambient extremes.
Recommended
Medical Device Calibration Storage
Infusion pumps, diagnostic instruments, and patient monitors store calibration coefficients, usage counters, and service records that regulatory frameworks require to persist reliably. The CY14B101KA-SP45XI keeps these constants in nonvolatile QuantumTrap cells that survive uncontrolled shutdowns, while day-to-day updates occur in wear-free SRAM. The integrated RTC validates calibration expiry dates and maintenance intervals autonomously. Because calibration data is rewritten at every service event yet read constantly, the unlimited endurance and 45 ns read speed match the access pattern perfectly. The 3V operation integrates into battery-powered medical electronics, and the monolithic single-chip approach simplifies design-history documentation versus multi-chip RTC-plus-EEPROM stacks.
Recommended
Security and Access Control Systems
Access controllers and alarm panels must retain credential databases, event logs, and armed states across power failures and tamper events. The CY14B101KA-SP45XI stores this data with automatic nonvolatile STORE on power loss, ensuring no audit gap even during intrusion-caused outages. Its RTC timestamps every badge read and alarm event for forensic review, replacing a discrete RTC IC. The 128K x 8 array holds thousands of credentials, updated at SRAM speed with unlimited endurance as databases change. The 45 ns parallel interface serves fast lookup during peak badge-traffic periods. Industrial temperature tolerance supports outdoor gate controllers from -40C to +85C without derating.
Recommended
Recommended Products Summary
Engineering reference data for CY14B101KA-SP45XI β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | CY14B101KA-SP25XI | CY14B101KA-SP45XIT | CY14B101MA-SP45XI | CY14B101MA-SP25XI |
|---|---|---|---|---|---|
| Package | 48-SSOP | 48-SSOP - same | 48-SSOP - same | 48-SSOP - same | 48-SSOP - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Memory Organization | 128K x 8 | 128K x 8 | 128K x 8 | 64K x 16 | 64K x 16 |
| Access Time | 45 ns | 25 ns | 45 ns | 45 ns | 25 ns |
| Density | 1 Mbit | 1 Mbit | 1 Mbit | 1 Mbit | 1 Mbit |
| Real-Time Clock | Yes | Yes | Yes | Yes | Yes |
| Supply Voltage | 3 V | 3 V | 3 V | 3 V | 3 V |
| Nonvolatile Technology | QuantumTrap nvSRAM | QuantumTrap nvSRAM | QuantumTrap nvSRAM | QuantumTrap nvSRAM | QuantumTrap nvSRAM |
| Temperature Grade | Industrial (-40C to +85C) | Industrial | Industrial | Industrial | Industrial |
Key Differentiators
- Integrated RTC in the same monolithic die (vs CY14B101KA-SP25XI)
- Unlimited SRAM write endurance with automatic nonvolatile capture (vs CY14B101MA-SP45XI)
- No battery needed for data retention (vs conventional battery-backed SRAM modules)
Design Notes
The automatic STORE operation depends on harvesting energy from the decaying VCC rail during power failure. Ensure your power supply decay characteristic allows the board-level bulk capacitance to sustain VCC long enough for the tSTORE duration specified in the manufacturer datasheet. Avoid heavy simultaneous loads on the same rail during shutdown, and place a suitably sized bulk capacitor near the nvSRAM supply pin. Verify the power-fail detection threshold (VSWITCH per datasheet) is above your minimum valid SRAM access voltage so STORE never triggers from a legitimate brownout dip.
The RTC backup input requires a dedicated low-leakage backup source routed away from switching regulator nodes; follow the RTC section of the Infineon datasheet for the backup source sizing and current budget. Keep the address and data bus traces length-matched when the device sits on a fast processor bus; although 45 ns asynchronous access is forgiving, ringing on high-impedance SRAM inputs can cause marginal sampling. Use 10 kHz to 100 kHz range pull-ups on control pins as needed and add 0.1 uF decoupling directly at the VCC pin plus one 10 uF bulk capacitor per power island.
Three frequent mistakes with this family: (1) treating the RTC as battery-backed without providing the required backup source - timekeeping stops without it, though nvSRAM data still survives; (2) violating store-cycle timing by removing power faster than tSTORE, which loses the most recent SRAM writes even though older nonvolatile data is safe; (3) confusing the KA (128K x 8) and MA (64K x 16) order codes when sourcing - they share the 48-SSOP package but are not functionally interchangeable on an 8-bit bus. Always verify the full ordering-code suffix, including speed grade and temperature letter.
Estimated: for a 48-SSOP in a 3V logic system, total power is dominated by bus switching rather than the IC core, so no heatsink or thermal copper is required. Focus layout effort on signal integrity instead: route the parallel address bus as a controlled group with solid ground return, place the nvSRAM within 50 mm of the bus master, and series-terminate (estimated 22 to 33 ohm) long address lines if reflections appear. Keep the RTC crystal traces short and guarded per the datasheet layout guidance for timing accuracy.
Compliance Information
RoHS compliance indicated by the X in the ordering code and confirmed in Mouser listing (SOIC 0.300 inch, RoHS compliant, MO-119 family). REACH and conflict-minerals status not stated in provided data.
