CY14B101KA-ZS45XI - 1Mb nvSRAM 45ns 3V RTC | Infineon
料号： CY14B101KA-ZS45XI ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $9.2 | $9.20 |
| 10 | $8.45 | $84.50 |
| 100 | $7.6 | $760.00 |
| 500 | $6.95 | $3,475.00 |
| 1,000 | $6.4 | $6,400.00 |
CY14B101KA-ZS45XI 概述
An nvSRAM is a memory device that combines the fast, unlimited-endurance read/write behavior of standard SRAM with the nonvolatility of EEPROM or Flash. Internally, the CY14B101KA behaves exactly like a conventional asynchronous SRAM during normal operation, but it incorporates QuantumTrap nonvolatile elements that automatically capture a snapshot of SRAM contents on power loss, restoring them on power-up. In the memory hierarchy, it sits as a parallel-interface nonvolatile RAM within the broader category of memory ICs, complementing DRAM, Flash, and serial EEPROMs.
Key features include the 45 ns access time, which permits zero-wait-state operation with many microprocessors; 20-year data retention without battery; and a full-featured real-time clock integrated on the same die, which keeps time even during total power loss using a backup source. The parallel interface uses standard SRAM pinout conventions (address, data, CE, WE, OE), simplifying upgrades from legacy SRAM sockets.
Technically, the device uses CMOS technology with the QuantumTrap tunneling-based nonvolatile element, described by the manufacturer as producing highly reliable nonvolatile storage. STORE and RECALL operations transfer data between the SRAM array and the nonvolatile cells; these can be triggered automatically on power-down (auto-store) or under software control via the HSB hardware pin.
Typical applications include industrial programmable logic controllers (PLCs), metering systems that must retain logged data and clock time through outages, medical equipment configuration storage, and networking equipment event logs. The RTC plus nonvolatility combination makes it especially well suited to systems requiring both timestamping and crash-resilient data.
When designing with this device, budget for the tSTORE and tRECALL durations (tens of milliseconds) in your power-fail sequence, and ensure VCAP or backup wiring per the datasheet. Avoid continuous HSB assertions during SRAM write bursts to prevent unintended store cycles.
This page synthesizes distributor pricing tiers, drop-in alternative analysis, design guidance, and comparison data not consolidated in the manufacturer datasheet alone.
直接替换替代料： CY14B101KA-ZS45XI ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： CY14B101KA-ZS45XI （相同外形与封装尺寸） ——差异在于 Access Time, Density, Interface, Memory Type, Operating Temperature.
快速对比工具——选择替代料号进行并排对比：
CY14B101NA-ZS45XI
✅ 直接替换📋 参考替代料（不在目录中）
CY14B101LA-ZS45XI
✅ 直接替换📋 参考替代料（不在目录中）
CY14B101KA-ZS45XIT
✅ 直接替换📋 参考替代料（不在目录中）
CY14B101KA-ZS45XI 最大额定值与电气特性
| 存储器类型 | nvSRAM (nonvolatile SRAM) with RTC |
| Density | 1 Mbit (1049 kbits) |
| 存储组织 | 128K x 8 |
| Access Time | 45 ns |
| 电源电压 | 3 V (2.7 V to 3.6 V range class) |
| 接口 | Parallel (SRAM-compatible) |
| Data Retention | 20 years |
| Real-Time Clock | Yes, integrated with backup |
| Technology | CMOS with QuantumTrap nonvolatile elements |
| 封装 | 44-pin TSOP II |
| 安装类型 | Surface Mount |
| 工作温度 | -40C to +85C (industrial, XI suffix) |
| RoHS 状态 | Compliant |
| Package Standard | MO-119, SOIC-family TSOP II outline |
| Endurance (SRAM reads/writes) | Unlimited |
CY14B101KA-ZS45XI mo-119, soic-family tsop ii outline 引脚配置指南
CY14B101KA-ZS45XI（mo-119, soic-family tsop ii outline 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： CY14B101KA-ZS45XI.
请参阅 数据手册 以查看完整引脚配置。
典型应用
CY14B101KA-ZS45XI 适用于 6 应用s: Industrial PLC and Automation, Utility Metering Systems, Networking and Telecom Equipment, Medical Diagnostic Equipment, Point-of-Sale and Secure Terminals, Aerospace and Rugged Data Loggers.
Industrial PLC and Automation
Programmable logic controllers need memory that survives both frequent parameter writes and unexpected power interruptions on the factory floor. The CY14B101KA-ZS45XI fits this role because its SRAM array accepts writes at 45 ns speed with unlimited endurance, unlike Flash or EEPROM that wear out after limited program cycles, while the QuantumTrap nonvolatile layer automatically captures data on power fail. The integrated RTC timestamps fault events across outages without a separate clock chip. In a typical design, the nvSRAM holds retentive ladder data, recipe parameters, and diagnostic logs; auto-store must complete within the bulk-capacitor hold-up window, so designers verify the power-fail warning time against the datasheet tSTORE specification.
推荐
Utility Metering Systems
Electricity, gas, and water meters must retain accumulated consumption data and tariff tables through power outages measured in days or years. The CY14B101KA-ZS45XI addresses this with 20-year nonvolatile data retention and battery-less QuantumTrap storage, eliminating the scheduled battery replacement that battery-backed SRAM demands. Writes to update register values occur continuously at SRAM speed with no endurance penalty, and the integrated RTC maintains time-of-use billing timestamps across blackouts. The 3V supply suits battery- or supercapacitor-backed meter electronics, and the industrial -40C to +85C rating covers outdoor enclosures. Meter firmware typically forces a software-triggered STORE whenever a critical billing register changes, complementing auto-store on power fail.
推荐
Networking and Telecom Equipment
Routers, switches, and line cards log configuration changes, MAC tables, and failure events that must survive crashes and power interruptions. The CY14B101KA-ZS45XI provides 128K x 8 bytes of immediately writable storage at 45 ns access, so the CPU logs events at full bus speed without the block-erase latencies of NOR Flash. The 20-year retention guarantees that post-mortem event logs remain readable after extended unpowered storage of spare boards. The integrated RTC supplies timestamps for syslog entries even if the system dies before flushing to Flash. Designers place the device in the CPU's memory space via the standard parallel CE/OE/WE interface, adding only power-fail detection logic for auto-store completion.
推荐
Medical Diagnostic Equipment
Medical devices such as patient monitors, infusion pumps, and diagnostic analyzers must preserve calibration constants, audit trails, and last-session settings through power loss to comply with data-integrity requirements. The CY14B101KA-ZS45XI stores this data in nonvolatile QuantumTrap cells with 20-year retention while allowing unlimited high-speed writes during operation - important because audit logs update frequently and EEPROM wear would become a maintenance issue. The integrated RTC keeps event timestamps valid across outages, supporting regulatory traceability. The industrial temperature grade covers sterilization-adjacent equipment rooms, and the 3V parallel interface connects directly to medical-grade microcontrollers without serial-bus bottlenecks, ensuring settings restore instantly at boot.
推荐
Point-of-Sale and Secure Terminals
POS terminals and payment devices must never lose the last transaction record or security parameters, even if power is pulled mid-transaction. The CY14B101KA-ZS45XI allows transaction buffers and key material to be written into SRAM instantly, with auto-store capturing the data to nonvolatile cells when supply voltage collapses. The 45 ns access time keeps the terminal CPU free of wait states during receipt printing and display updates, and the 20-year retention means archived terminals still boot with intact keys years later. The integrated RTC supports time-stamped receipt and audit requirements without a discrete RTC and backup cell, shrinking the security-relevant bill of materials and removing a scheduled battery-service item from field maintenance routines.
推荐
Aerospace and Rugged Data Loggers
Flight data recorders, UAV mission loggers, and rugged test instrumentation write sensor streams continuously and must survive abrupt power loss on impact or failure. The CY14B101KA-ZS45XI handles continuous high-speed writes into SRAM with unlimited endurance, while QuantumTrap auto-store snapshots the latest data when power collapses - far faster than writing through to Flash for every sample. The industrial -40C to +85C range suits unpressurized equipment bays, and the 20-year retention preserves evidence data during long depot storage. Designers pair the parallel nvSRAM with a microcontroller's external memory interface, sizing hold-up capacitance so the tSTORE duration completes even under worst-case cold-temperature supply sag, and using the HSB pin to signal store-in-progress to the host.
推荐
推荐产品汇总
工程参考数据： CY14B101KA-ZS45XI ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | CY14B101NA-ZS45XI | CY14B101LA-ZS45XI | CY14B101KA-ZS45XIT |
|---|---|---|---|---|
| Package | 44-TSOP II | 44-TSOP II - same | 44-TSOP II - same | 44-TSOP II - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Density / Organization | 1 Mbit, 128K x 8 | 1 Mbit, 128K x 8 | 1 Mbit, 128K x 8 | 1 Mbit, 128K x 8 |
| Access Time | 45 ns | 45 ns | 45 ns | 45 ns |
| Real-Time Clock | Yes | No | No (family variant) | Yes |
| Data Retention | 20 years | 20 years | 20 years | 20 years |
| Operating Temperature | -40C to +85C (industrial) | -40C to +85C (industrial) | -40C to +85C (industrial) | -40C to +85C (industrial) |
| Packing Suffix | Standard (tray) | Standard (tray) | Standard (tray) | Tape & Reel (T suffix) |
关键差异点
- Integrated real-time clock （对比 CY14B101NA-ZS45XI)
- 45 ns SRAM-speed access with unlimited endurance （对比 CY14B101LA-ZS45XI)
- Battery-less 20-year retention （对比 Legacy battery-backed SRAM modules)
设计说明
Auto-store on power failure requires the supply to remain valid long enough for the STORE operation (tens of milliseconds per the datasheet) to complete. Provide bulk hold-up capacitance on the 3V rail sized so VDD stays above the minimum store voltage for tSTORE under maximum load. Verify the power-fail detection threshold of your supervisor against the nvSRAM's documented warning threshold. If your system cannot guarantee hold-up time, force a software STORE after every critical data write instead of relying solely on auto-store.
Do not treat the nonvolatile store as a substitute for SRAM-speed writes: STORE and RECALL each take far longer than a 45 ns access cycle, and the device is unavailable during these operations. The HSB (hardware store/busy) pin signals store activity - connect it to an interrupt or poll it before asserting chip enable during boot or power-down routines. Also, RTC registers should be read atomically during a busy-checked window to avoid torn time values, as described in the manufacturer datasheet RTC section.
Place decoupling capacitors (0.1 uF ceramic plus 4.7-10 uF bulk) within a few millimeters of the VDD pins of the 44-TSOP II package. The RTC backup source wiring should be short and routed away from switching-node noise from nearby DC-DC converters, since RTC accuracy depends on a clean oscillator supply. The 44-TSOP II footprint follows the standard MO-119 outline, so legacy battery-backed SRAM or SRAM boards designed for TSOP II SRAM can be converted by footprint reuse.
合规信息
Package described in verified data as ROHS COMPLIANT (MO-119, SOIC-family TSOP II outline). Industrial temperature grade (XI); no AEC-Q100 qualification indicated in the provided data.
