IDH04G65C6XKSA1 - 650V SiC Schottky Diode 4A | Infineon
料号： IDH04G65C6XKSA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.28 | $128.00 |
| 500 | $1.05 | $525.00 |
| 1,000 | $0.92 | $920.00 |
IDH04G65C6XKSA1 概述
A Schottky diode is a unipolar semiconductor device whose conduction is governed by majority carriers rather than minority carriers, so it does not exhibit reverse-recovery charge. Silicon Carbide (SiC) extends this principle to much higher blocking voltages and junction temperatures than conventional silicon Schottky devices, which historically topped out around 200 V. SiC Schottky diodes therefore occupy the node 'SiC Schottky diode -> Schottky diode -> rectifier diode -> discrete semiconductor -> power semiconductor' in the electronics taxonomy.
Key features include a 650 V repetitive peak reverse voltage, 4 A average forward current (12 A surge per the DigiKey listing), low forward voltage of 1.25 V, junction operating temperature of -55C to +175C, and an industry-standard PG-TO220-2 package with a kelvin-source tab that reduces inductance. The die is merged-PN-junction (MPS) structured for improved surge-current robustness and lower leakage.
Typical applications are the boost and PFC stages of server/telecom SMPS, the secondary rectification of EV onboard chargers and DC fast chargers, photovoltaic inverters, and industrial welding/motor drives. In each case, the G6's low Qc (capacitive charge) and zero Qrr reduce EMI, shrink magnetics, and allow higher switching frequencies.
When designing, verify heatsinking for the TO-220 tab and respect the 4 A average forward-current derating above 135C. Use a snubber if the circuit has high dv/dt stress, although the G6 MPS structure tolerates far higher dv/dt than silicon PiN diodes.
直接替换替代料： IDH04G65C6XKSA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IDH04G65C6XKSA1 （相同外形与封装尺寸） ——差异在于 Mounting Type, Operating Junction Temperature Range, Repetitive Peak Reverse Voltage (VRRM).
快速对比工具——选择替代料号进行并排对比：
IDH06G65C6XKSA1
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
IDH04G65C5XKSA1
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
STPSC406G2
✅ 直接替换📋 参考替代料（不在目录中）
STPSC4H065G2
✅ 直接替换📋 参考替代料（不在目录中）
FFSP0465A
✅ 直接替换📋 参考替代料（不在目录中）
C4D04065A
✅ 直接替换📋 参考替代料（不在目录中）
IDH04G65C6XKSA1 最大额定值与电气特性
| Diode Type | Silicon Carbide (SiC) Schottky |
| Series | CoolSiC G6 |
| Repetitive Peak Reverse Voltage (VRRM) | 650 V |
| Average Forward Current (IF(AV)) | 4 A |
| Non-Repetitive Peak Surge Current (IFSM) | 12 A (per distributor listing) |
| Forward Voltage (VF) at IF | 1.25 V (typical at rated IF) |
| Reverse Recovery Charge (Qrr) | 0 nC (SiC Schottky - no reverse recovery) |
| Junction Capacitance (Cj) | 205 pF @ 1 V, 1 MHz (per onepcba listing) |
| 工作结温范围 | -55C to +175C |
| Package / Supplier Device Package | PG-TO220-2 (through-hole) |
| 安装类型 | Through Hole |
| RoHS 状态 | Compliant |
| Configuration | Single Diode |
IDH04G65C6XKSA1 引脚配置
| 引脚 1 | K (Cathode) — Cathode connection, also tied to metal tab |
| 引脚 2 | A (Anode) — Anode connection |
| 引脚 TAB | Tab (Cathode) — Metal heatsink tab electrically connected to cathode |
Forward Current vs Case Temperature Derating
典型应用
IDH04G65C6XKSA1 适用于 6 应用s: Server/Telecom PFC Rectification, EV Onboard Charger Secondary Rectification, Photovoltaic String Inverters, Industrial Welding & Plasma Power, Telecom -48 V Battery Backup Chargers, Medical Imaging Power Supplies.
Server/Telecom PFC Rectification
The IDH04G65C6XKSA1 is designed for 650 V-class bridgeless and totem-pole PFC stages in 1-3 kW server and 5G telecom rectifiers. Its 4 A average forward current and zero Qrr enable operation at 65-130 kHz switching frequencies, where silicon PiN diodes would generate severe reverse-recovery losses. At a typical 390 VDC bus and 4 A load, the 1.25 V VF translates to ~5 W of conduction loss per diode, and the 175C junction rating eliminates derating concerns in fan-cooled chassis. Compared with a silicon ultrafast rectifier, this Infineon G6 part cuts PFC-stage switching losses by 50-70%.
推荐
EV Onboard Charger Secondary Rectification
In 6.6-22 kW EV onboard chargers, the IDH04G65C6XKSA1 serves as the secondary-side high-frequency rectifier after the isolation transformer, replacing center-tapped silicon diodes. Its 650 V rating comfortably exceeds the reflected voltage from a 400 V or 800 V traction pack, and the absence of reverse-recovery eliminates the dv/dt-induced ringing that stresses the transformer's leakage inductance. The TO-220 package bolts directly to a chassis-mount heatsink shared with the synchronous rectifiers. Switching frequency can be pushed to 200-500 kHz, shrinking magnetic components by 30-50% versus 100 kHz silicon designs.
推荐
Photovoltaic String Inverters
The IDH04G65C6XKSA1 is used in the boost stage and DC-side clamping of 1.5-10 kW residential and small-commercial photovoltaic string inverters. Its 175C junction rating supports outdoor enclosure operation up to 70C ambient without forced airflow, and the G6 MPS structure tolerates the high dv/dt of 50 kHz hard-switched boost topologies without reliability concerns. The 4 A rating suits single-string 12-15 A applications when paired with a small heatsink. Compared with silicon PiN diodes, the Infineon part reduces boost-stage losses by 60% and eliminates audible noise from reverse recovery.
Industrial Welding & Plasma Power
In high-frequency inverter welding (HF TIG) and plasma-cut power supplies, the IDH04G65C6XKSA1 serves as the freewheeling and snubber-recovery diode in IGBT bridge legs. With welding arcs presenting 30-40 kHz of hard switching and high dv/dt transients, the G6 SiC Schottky's zero Qrr prevents the voltage overshoot and shoot-through failures that plague silicon ultrafast diodes. Its 12 A surge current rating handles the welding strike transient, and the PG-TO220-2 footprint mounts to the same aluminum heatsink plate as the IGBTs.
Telecom -48 V Battery Backup Chargers
The IDH04G65C6XKSA1 is deployed in the boost-PFC front end of -48 V rectifier modules for telecom backup systems, where high efficiency at partial load is critical to minimize cooling cost in sealed outdoor cabinets. The 4 A rating fits 1U rectifier modules at 1500 W output, and the absence of reverse-recovery losses enables CCM operation at 100 kHz with hard-switched Si MOSFETs. At typical 50% load efficiency targets (>96%), the SiC PFC diode contributes only 1.5-2 W versus 6-8 W for a silicon equivalent.
Medical Imaging Power Supplies
In CT scanner gantry power supplies and MRI gradient amplifiers, the IDH04G65C6XKSA1 forms part of low-noise rectification stages where EMI from reverse-recovery would interfere with sensitive imaging electronics. The G6 SiC Schottky's clean switching waveform reduces common-mode emissions by 10-15 dB versus PiN rectifiers, simplifying EMI filter design. Its 175C rating supports compact fan-less operation in the gantry's restricted airflow environment, and the standard TO-220 footprint allows easy heatsink integration alongside SiC MOSFETs.
推荐产品汇总
工程参考数据： IDH04G65C6XKSA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IDH06G65C6XKSA1 | STPSC406G2 | STPSC4H065G2 | FFSP0465A | C4D04065A |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | STMicroelectronics | STMicroelectronics | onsemi | Wolfspeed/Cree |
| Package | PG-TO220-2 (TH) | PG-TO220-2 (TH) - same | TO-220 - same | TO-220 - same | TO-220 - same | TO-220 - same |
| VRRM (V) | 650 | 650 | 650 | 650 | 650 | 650 |
| IF(AV) (A) | 4 | 6 | 4 | 4 | 4 | 4 |
| VF @ IF (V) | 1.25 | 1.25 | 1.35 | 1.35 | 1.45 | 1.5 |
| TJ Max (C) | 175 | 175 | 175 | 175 | 175 | 175 |
| Generation / Family | CoolSiC G6 | CoolSiC G6 | ST G2 | ST G2 | onsemi SiC | Z-Rec Gen 3 |
| Reverse Recovery | Zero (SiC Schottky) | Zero (SiC Schottky) | Zero (SiC Schottky) | Zero (SiC Schottky) | Zero (SiC Schottky) | Zero (SiC Schottky) |
关键差异点
- Lowest VF in class for 650 V/4 A SiC Schottky （对比 STPSC406G2)
- CoolSiC G6 merged-PN junction structure （对比 FFSP0465A)
- Wide -55C to +175C junction temperature range （对比 C4D04065A)
设计说明
Estimated: at IF=4 A and VF=1.25 V, conduction loss is ~5 W per diode. The PG-TO220-2 package has a typical theta_JC of 1.5 C/W, so junction temperature rise above case is 7-8 C at full rated current - negligible. With a modest clip-on heatsink of 10 C/W theta_SA, total thermal resistance from junction to ambient is ~12 C/W, supporting 4 A continuous at 100C ambient. Above 135C ambient, derate IF linearly to zero at 175C per the manufacturer's SOA curve.
Minimize the loop inductance between the IDH04G65C6XKSA1 cathode and the active switch (MOSFET/IGBT) to limit voltage overshoot during turn-off. Although the G6 MPS structure tolerates high dv/dt (typically 50-100 kV/us), placing the diode within 10 mm of the switch and using a low-inductance ground return prevents unintended ringing above 750 V. For high-frequency switching (>100 kHz), add a small RC snubber (10 ohm + 470 pF) across the diode.
Do not exceed VRRM=650 V under any condition, including transient ringing. Although the G6 part is rugged, avalanche operation is not specified and can degrade leakage current. Always measure peak reverse voltage on the prototype with a high-bandwidth probe (>200 MHz). Also avoid exceeding IFSM=12 A surge rating, which is a single-cycle non-repetitive rating for cold-start inrush.
合规信息
RoHS/REACH compliance per Infineon product page. Not AEC-Q100 qualified - this is the industrial-grade IDH04G65C6 variant, not the automotive-grade IDH04G65C6FKSA1-A variant. Halogen-free status not explicitly stated in the verified web data.
